(19)
(11) EP 1 372 146 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION

(48) Corrigendum issued on:
10.03.2004 Bulletin 2004/11

(43) Date of publication:
17.12.2003 Bulletin 2003/51

(21) Application number: 03020494.5

(22) Date of filing: 11.05.2000
(51) International Patent Classification (IPC)7G11B 7/125, G11B 11/105, G11B 7/24
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 19.05.1999 JP 13806799
17.03.2000 JP 2000076514

(62) Application number of the earlier application in accordance with Art. 76 EPC:
00927745.0 / 1182649

(71) Applicant: MITSUBISHI CHEMICAL CORPORATION
Chiyoda-ku, Tokyo 100-0005 (JP)

(72) Inventors:
  • Nobukuni, Natsuko, Mitsubishi Chem. Corp.
    Yokohama-shi Kanagawa 227-0033 (JP)
  • Horie, Michikazu, Mitsubishi Chem. Corp.
    Yokohama-shi Kanagawa 227-0033 (JP)

(74) Representative: VOSSIUS & PARTNER 
Siebertstrasse 4
81675 München
81675 München (DE)

 
Remarks:
This application was filed on 15 - 09 - 2003 as a divisional application to the application mentioned under INID code 62.
 


(54) Optical recording method and medium.


(57) The present invention relates to an optical recording method for recording mark length modulated information with a plurality of recording mark lengths by irradiating a recording medium with a light, the optical recording method comprising a reduced number of divisions in the pulse division scheme.
Preferred phase change mediums are those having a recording layer containing excessive Sb in the SbTe eutectic composition. A particularly preferred composition contains excessive Sb and also Ge in the base Sb70Te30 eutectic composition. The Sb/Te ratio is particularly preferably set to 4 or more. The content of Ge is preferably 10 atomic % or less. An example of such a recording layer is a MzGey(SBxTe1-x)1-y-z alloy (where 0≤z≤0.1, 0<y≤0.3, 0.8≤x; and M is at least one of In, Ga, Si, Sn, Pb, Pd, Pt, Zn, Au, Ag, Zr, Hf, V, Nb, Ta, Cr, Co, Mo, Mn, Bi, O, N and S).