|
(11) | EP 1 375 149 B1 |
| (12) | EUROPEAN PATENT SPECIFICATION |
|
|
| (54) |
MICROINJECTOR HAVING DRIVE CIRCUIT AND METHOD FOR MAKING THE SAME MIKROINJEKTIONSVORRICHTUNG MIT STEUERSCHALTUNG UND VERFAHREN ZUR HERSTELLUNG DERSELBEN MICRO-INJECTEUR AYANT UN CIRCUIT D'ENTRAINEMENT ET SON PROCEDE DE FABRICATION |
|
|
|||||||||||||||||||||||||||||||
| Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention). |
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The invention relates to a microinjector head and its manufacturing method, and more particularly, to an integrally formed microinjector head with driving circuit, and a manufacturing method thereof.
2. Description of the Prior Art
[0002] At present, droplet injectors are widely applied in inkjet printers. Droplet injectors also have many other applications in different fields such as fuel injection systems, cell sorting, drug delivery systems, direct print lithography and micro jet propulsion systems. The common aim of the above applications is to provide a droplet injector that is reliable, of low-cost, and provides high-quality droplets with a high frequency and a high spatial resolution.
[0003] However not all apparatuses can successfully inject uniform droplets. In currently known and used droplet injection systems, one system using thermally driven bubbles to inject droplets is proved to be a successful system because of its comparatively simple architecture and lower cost.
[0004] U. S. Pat. No. 6,102,530-"Apparatus and method for using bubbles as virtual valve in microinjector to eject fluid" mentions a droplet injection apparatus with virtual valves as shown in Fig. 1. In fig.1, heaters 20, 22 are located around orifices 18. A first bubble is generated at a position on a fluid chamber 14 close to orifices upon heating, the first bubble acts like a virtual valve and is capable of reducing a cross talk effect with the adjacent chambers. A second bubble is then generated and approaches the first bubble to push the fluid, causing a droplet to be ejected from the orifice 18. Finally, the second bubble fuses with the first bubble and successfully reduces the production of satellite droplets.
[0005] U. S. Pat. No. 5,122,812-"Thermal inkjet print head having driver circuit thereon and method for making the same" mentions a structure of an inkjet print head with driving circuit as shown in Fig. 2. Heating devices and driving circuit are integrated on a same substrate. However there are still many steps in the process. And according to the structure, a barrier layer 130 of 20 ∼ 30 µm in thickness must be formed and an orifice plate is adhered on the barrier layer 130. This adhesion procedure limits the spatial resolution due to unavoidable assembly tolerance. In addition, the adhesion procedure is not compatible with general IC processes. When microinjector arrays are integrated with driving circuit to reduce layout and are tightly packed, such incompatibility problems become more obvious and lead to more complicated manufacturing processes and thus higher costs.
SUMMARY OF THE INVENTION
[0006] It is therefore a primary objective of the claimed invention to provide a microinjector head with driving circuit to control a plurality of first and second bubble-generating devices simultaneously to eject fluid in a plurality of chambers from orifices. A secondary objective of the claimed invention is to provide a manufacturing method for making a microinjector head with driving circuit in fewer steps and with less number of circuit devices and linking circuits as compared with the conventional microinjector head.
[0007] According to the claimed invention, the microinjector head with driving circuit to eject fluid uses a bubble as a virtual valve. The microinjector head comprises a plurality of fluid chambers, a manifold, a plurality of orifices, and a plurality of pairs of bubble generators, each pair of bubble generators comprising a first bubble generating device and a second bubble generating device, and a driving circuit.
[0008] Wherein the manifold is communicated with the fluid chambers and the plurality of orifices are communicated with the fluid chamber.
[0009] The fluid chambers are bounded by a substrate, a low-stress layer and parts of a dielectric layer or parts of a sacrificial layer.
[0010] The first and second bubble generating device are located near a corresponding orifice and on the surface of the low-stress layer opposite to the corresponding chamber, the first bubble-generating device generates a first bubble that is used as a virtual valve, thereafter, the second bubble-generating device generates a second bubble to cause fluid in the chamber to eject out from the orifice when the chamber is filled with fluid.
[0011] The driving circuit comprises a plurality of functional devices disposed on a same substrate as the plurality pairs of first and second bubble generating devices. The driving circuit is used to independently send a driving signal to a single bubble generator, and to drive the plurality pairs of the bubble generators, whereby functions to simultaneously control the plurality pairs of the bubble generators.
[0012] The functional devices may be transistors, in particular metal oxide semiconductor field effect transistors (MOSFET).
[0013] According to the claimed invention, it is provided a method for manufacturing the microinjector with a driving circuit comprising the steps of providing a substrate; forming a driving circuit which includes a plurality of functional devices on the substrate; then either forming a sacrificial layer on the substrate without coving the driving circuit or using the uppermost layer of the dielectric layer upon foming the driving circuit as the sacrificial layer; sequentially, forming a low-stress material layer on the sacrificial layer; then, etching the substrate and the sacrificial layer to form a manifold and a plurality of fluid chambers wherein the manifold is communicated with the fluid chambers so as to supply the fluid to the fluid chambers.
[0014] Then, a plurality of pairs of First and second bubble generating device are formed on the low-stress material layer while communicating with the driving circuit. Finally, a plurality of orifices are formed between the corresponding first and second bubble generating device, and communicated with the fluid chambers to eject the fluid, whereby an integrally formed microinjector with a driving circuit is finished.
[0015] These and other objects and the advantages of the present invention will no doubt become obvious to those of ordinary skill in the art after having read the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016]
Fig. 1 is a structural diagram of a prior art droplet injection apparatus with virtual valves.
Fig. 2 is a structural dissection diagram of a prior art microinjector head with driving circuit;
Fig. 3 to Fig. 9 are structural and schematic diagrams of procedures to manufacture the microinjector head with driving circuit and structural diagrams of the microinjector head, wherein Fig. 9 is a structural and schematic diagram of the microinjector head with driving circuit of the present invention; and
Fig. 10 to Fig.12 are structural and schematic diagrams of a second embodiment of procedures to manufacture the microinjector head with driving circuit and structural diagrams of the microinjector head.
Brief Description of the Reference Numerals
[0017]
| 10 | array | 12 | microinjector |
| 14 | fluid chamber | 16 | manifold |
| 18 | orifice | 20 | first heater |
| 22 | second heater | 24 | common electrode |
| 26 | fluid | 38 | substrate |
| 40 | sacrificial layer | 42 | low-stress layer |
| 44 | conductive layer | 45,46 | low temperature oxide layer |
| 50 | second part | 51 | dielectric layer |
| 52 | first part | 101 | thin oxide layer |
| 102 | silicone nitride layer | 105 | polysilicon gate |
| 106 | source | 107 | drain |
| 130 | shield layer | 140 | orifice plate |
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0018] The present invention offers an improvement over the prior art. Therefore, references to items shown in Fig.1 and Fig.2 will be made in the following description. As shown in Fig.1 which shows an array 10 of microinjector 12, the array 10 comprises a plurality of microinjectors 12 adjacent each other. Each of the microinjectors includes a fluid chamber 14, a manifold 16, an orifice 18, a first heater 20, and a second heater 22. The first heater 20 and the second heater 22 are connected in series to a common electrode 24.
[0019] The first heater 20 and the second heater 22 is operated, so that the first heater 20 generates a first bubble which functions like a valve, for separating the fluid chamber 14 and the orifice 18, and the second heater 22 then generates a second bubble which is used to push the fluid 26, cause the fluid to be ejected from the orifice 18, thereby achieve the function of ejecting fluid 26.
[0020] The fluid chamber 14 is filled with fluid 26 which includes but not limited to ink, gasoline, oil, chemicals, biomedical solution, water and the like, and the kind of the fluid is selected depending on the special application.
[0021] However, in the present invention, in order to simultaneously control a plurality of pairs of the first and second heater 20 and 22, it is necessary to incorporate a driving circuit into the microinjector head.
[0022] As shown in Figs. 3 to Fig. 5, making a microinjector array 10 with driving circuit on a substrate 38 such as a silicon wafer comprises forming a thin oxide layer 101 on the substrate 38, then forming a silicon nitride (SiNx) layer 102 on the thin oxide layer (as shown in Fig. 3), etching the silicon nitride layer 102 (as shown in Fig. 4) after exposing and developing a silicon nitride layer 102, , and then using local oxidation to oxidize unprotected regions of the thin oxide layer 101 to form a field oxide layer. Until now, a dielectric layer 51 (as shown in Fig. 5) which comprised a first part 52 and a second part 50 is formed. The first part 52 is a part of the thin oxide layer 101 covered by silicon nitride layer 102. The second part 50 is the field oxide layer formed by local oxidation. This field oxide layer can be etched in the following procedures to form fluid chambers 14. Then the silicon nitride layer 102 is removed. Blanket boron ion implantation of the first part 52 and the second part 50 (as shown in Fig. 5) adjusts the threshold voltage of the driving circuit. A polysilicon gate 105 is formed on the first part 52 and a phosphorus ion implantation of the polysilicon gate 105 is performed to reduce resistance of the polysilicon gate 105. Implanting arsenic ions in the substrate 38 forms a source 106 and a drain 107 close to the gate 105. Therefore, a plurality of functional devices are formed on the substrate 38 (as shown in Fig. 6).
[0023] Please refer to Fig. 7. A low stress layer 42, such as SiNx, is deposited on the second part 50 as an upper layer of chambers 14.
[0024] Please refer to Fig. 8. An etching solution KOH is used to etch a back side of the substrate 38 to form a manifold 16 as a main channel for fluid supply, and then the second part 50 is removed by the etching solution HF. Another etching using KOH is performed under precisely controlling the etching period to increase the depths of the fluid chambers 14. So the chambers 14 and the manifold 16 are connected and are capable of being filled with fluid. Extra care must be undertaken during this etching step because the convex corners of the chambers 14 are also attacked and rounded.
[0025] Heaters, including first heaters 20 and second heaters 22 are deposited and patterned. Preferably, the first heaters 20 and the second heaters 22 may be made of an alloy of tantalum and aluminum. However, other materials or alloys, such as platinum or HfB2, may also be employed to achieve the same effect. To protect the first heaters 20 and the second heaters 22 and isolate the plural functional devices, a low temperature oxide layer 45 is deposited as a protection layer on the whole substrate 38 which includes the gate 105, the source 106, the drain 107, and the second part 50.
[0026] A conductive layer 44 is formed on the first heaters 20 and the second heaters 22 to connect the first heaters 20, the second heaters 22, and the functional devices of the driving circuit. The driving circuit can transmit independently driving signals to a single heater (the first heaters 20 and the second heaters 22) and drive a plurality of pairs of heaters (the first heaters 20 and the second heaters 22), whereby less circuit elements and circuit lines are required to achieve the same function. For example, in the preferred embodiment, the first heaters 20 and the second heaters 22 are connected in series. The driving circuit controls the plurality bubble generators in matrix manner. For example, a column bubble generators is powered simultaneously, and another row is inputted transmission signals (or information), to independently control a single first heater 20 and second heater 22. The conductive layer 44 may preferably be made of an alloy of aluminum-silicon-copper. The conductive layer 44 may also be made of aluminum, copper, gold, tungsten, or other materials. Afterwards, a low temperature oxide layer 46 is deposited as a protection layer on the conductive layer 44.
[0027] Please refer to Fig. 9. An orifice 18 is formed between the first heater 20 and the second heater 22. If a line width of 3 µm is allowed in photolithography, the diameter of the orifice 18 can be as small as 2 µm, and the pitch between the orifice 18 and an adjacent orifice 18 can be as small as 15 µm. Until now, an integrally formed microinjector array with driving circuit is formed. Not only the driving circuit and heaters are integrated on the same substrate 38, but also an integral microinjector head structure is formed without the need of adhesion of an orifice plate.
[0028] The following is a description of another embodiment of the present invention. Compared with the first embodiment, the difference lies in the process of directly etching the second part 50 of Fig. 6 to form the fluid chamber 14 in the above mentioned embodiment as shown in Figs. 7, 8, and 9. This embodiment first etches a part of the second part 50 and forms a sacrificial layer 40 on the etched position, then performs the subsequent processes. Please refer to Fig. 10. Fig. 10 continues the process of Fig. 6. A part of the second part 50 of Fig. 6 is etched locally, and an oxide layer 40 is deposited on a part of the substrate 38 uncovered by the driving circuit so as to become a sacrificial layer 40 of the fluid chamber 14. A low stress layer 42' is then deposited as a top layer of the chamber 14.
[0029] Please refer to Fig. 11 and Fig. 12, which are similar in their processes to those of Fig. 8 and Fig. 9. As shown in Fig. 11, the substrate 38 and the sacrificial layer 40 are etched from the back side to form the manifold 16 and the chambers 14. The first heater 20, the second heater 22 and the protective low temperature oxide layer 45 are then deposited. A conductive layer 44 is formed to conduct the first heater 20, the second heater 22, and the driving circuit, and a low temperature oxide layer 46 is deposited on the conductive layer 44 as a protective layer. Finally, as shown in Fig. 12, photolithography is utilized to form an orifice 18 between the first heater 20 and the second heater 22. Then an integrally formed microinjector array with driving circuit is formed.
[0030] The order of the above processes can be changed according to real situations while still manufacturing a micro droplet injector head with appropriate driving circuit.
The Effect of the Present Invention
[0031] The microinjector and the method thereof according to the present invention function as follows:
- 1. The present invention provides an improved micro-droplet injector structure which can be applied in various fields such as ink jet printer;
- 2. The present invention provides an integrally formed micro-droplet injector in which the driving circuit and heaters are integrated on the same substrate, and the need of orifice plate is eliminated;
- 3. The number of steps is reduced, and the manufacturing process can be simplified;
- 4. The number of the connection wiring is reduced due to an integral structure, thus the manufacturing cost can be lowed while achieving the same control function.
a plurality of fluid chambers (14), each of which is bounded by a substrate (38) and a low-stress layer (42);
a manifold (16) communicated with the fluid chambers (14) for providing fluid (26) to the chambers (14);
a plurality of orifices (18) communicated with the corresponding chambers (14);
a plurality of pairs of bubble generators (20, 22, 44), each pair of which includes a first bubble generating device (20, 44) and a second bubble generating device (22, 44) which are provided near the corresponding orifice (18) and on the surface of the low-stress layer (42) opposite to the corresponding chamber (14), and wherein the first bubble generating device (20, 44) is adapted to generate a first bubble as a virtual valve in the fluid chamber (14) when the corresponding fluid chamber (14) is filled with the fluid (26), and the second bubble generating device (22, 44) is adapted to generate a second bubble thereafter so as to cause fluid (26) in the chamber (14) to be ejected out from the orifice (18); characterized in that the fluid chambers (14) are bounded additionally by parts of a dielectric layer (51) or parts of a sacrificial layer (40) disposed between the substrate (38) and the low-stress layer (42); and
a driving circuit comprising a plurality of functional devices is disposed on the same substrate (38) as the plurality of pairs of bubble generators (20, 22, 44), for independently sending driving signals to a single bubble generator (20, 22, 44) and for driving the plurality of pairs of bubble generators (20, 22, 44).
providing a substrate (38);
forming a dielectric layer (51) having a first part (52) and a second part (50) on the substrate (38);
forming a driving circuit containing a plurality of functional devices on the first part (52) of the dielectric layer (51);
forming a low-stress material layer (42) on the second part (50) of the dielectric layer (51);
etching the substrate (38) and the dielectric layers (51) to form a manifold (16) and a plurality of fluid chambers (14), the manifold (16) and the fluid chambers (14) being communicated to supply fluid (26) to the chambers (14);
forming a plurality of pairs of bubble generators (20, 22, 44) on the low-stress material layer (42), each pair of the bubble generators (20, 22, 44) comprising a first bubble generating device (20, 44) and a second bubble generating device (22,44), and being connected to the driving circuit; and
forming an orifice (18) located between the corresponding first bubble generating device (20, 44) and second bubble generating device (22, 44), and communicated with the corresponding chamber (14) to eject the fluid (26).
forming a thin oxide layer (101) on the substrate (38);
forming a silicon nitride layer (102) on the thin oxide layer (101);
oxidizing regions of the thin oxide layer (101) uncovered by the silicon nitride layer (102) by means of local oxidation to form a field oxide, wherein the thin oxide layer (101) covered by the silicon nitride layer (102) is the first part (52) of the dielectric layer (51), and the field oxide is the second part (50) of the dielectric layer (51); and
removing the silicon nitride layer (102).
implanting boron ions into the dielectric layer (51):
forming a polysilicon gate (105) on the first part (52) of the dielectric layer (51); and
implanting arsenic ions into the substrate (38) for forming a source (106) and a drain (107) close to the gate (105).
etching the substrate (38) from the back side to form the manifold (16);
removing the second part (50) of the dielectric layer (51); and
etching the substrate (38) from the back side again to form the chambers (14).
forming a resistance layer on the low-stress material layer (42) to form a first heater (20) and a second heater (22); and
forming a conductive layer (44) on the resistance layer, the conductive layer (44) and the resistance layer being connected.
providing a substrate (38);
forming a dielectric layer (51) having a first part (52) and a second part (50) on the substrate (38);
forming a driving circuit having a plurality of functional devices on the first part (52) of the dielectric layer (51);
etching a portion of the second part (50) of the dielectric layer (51), and forming a sacrificial layer (40) on the etched portion of the second part (50) of the dielectric layer (51);
forming a low-stress material layer (42') on the sacrificial layer (40);
etching a portion of the substrate (38) and the sacrificial layer (40) which includes no driving circuit, for forming a manifold (16) and a plurality of fluid chambers (14), the manifold (16) being communicated with the chambers (14) for providing fluid (26) to the chambers (14);
forming a plurality of pairs of bubble generators (20, 22, 44) on the low-stress material layer (42'), each pair of the bubble generators(20, 22, 44) being communicated with the driving circuit and comprising a first bubble generating device (20, 44) and a second bubble generating device (22, 44); and
forming a plurality of orifices (18) each of which being located between the corresponding first bubble generating device (20, 44) and second bubble generating device (22, 44), and communicated with the corresponding fluid chambers (14) for ejecting the fluid (26).
forming a thin oxide layer (101) on the substrate (38);
forming a silicon nitride layer (102) on the thin oxide layer (101);
oxidizing the thin oxide layer (101) not covered by the silicon nitride layer (102) by means of local oxidation, for forming a field oxide layer, wherein the thin oxide layer (101) covered by the silicon nitride layer (102) is the first part (52) of the dielectric layer (51), and the field oxide layer is the second part (50) of the dielectric layer (51); and removing the silicon nitride layer (102).
implanting boron ionsinto the dielectric layer (51);
forming a polysilicon gate (105) on the first part (52) of the dielectric layer (51); and
implanting arsenic ions into the substrate (38) for forming a source (106) and a drain (107) close to the gate (105).
etching the substrate (38) from the back side to form the manifold (16);
removing the sacrificial layer (40) that does not cover the driving circuit; and
etching the substrate (38) from the back side again to form the chambers (14).
forming a resistance layer on the low-stress material layer (42') to form a first heater (20) and a second heater (22); and
forming a conductive layer (44) on the resistance layer, the conductive layer (44) connected to the driving circuit.
eine Vielzahl von Flüssigkeitskammern (14), von denen jede an ein Substrat (38) sowie eine Schicht mit geringer Spannung (42) gebunden ist;
ein Verteiler (16), der mit den Flüssigkeitskammern (14) zum Bereitstellen von Flüssigkeit (26) an die Kammern (14) in Verbindung steht;
eine Vielzahl von Öffnungen (18), die mit den entsprechenden Kammern (14) in Verbindung stehen;
eine Vielzahl von Paaren von Blasengeneratoren (20, 22, 44), wobei jedes Paar eine erste Blasen-erzeugende Vorrichtung (20, 44) sowie eine zweite Blasen-erzeugende Vorrichtung (22, 44) enthält, die nahe der entsprechenden Öffnung (18) und auf der Oberfläche der Schicht mit geringer Spannung (42) gegenüber der entsprechenden Kammer (14) vorgesehen sind, und worin die erste Blasen-erzeugende Vorrichtung (20, 44) angepasst ist, um eine erste Blase als virtuelles Ventil in der Flüssigkeitskammer (14) zu erzeugen, wenn die entsprechende Flüssigkeitskammer (14) mit der Flüssigkeit (26) gefüllt ist, und die zweite Blasen-erzeugende Vorrichtung (22, 44) angepasst ist, um eine zweite Blase hiernach zu erzeugen, um die Flüssigkeit (26) in der Kammer (14) aus der Öffnung (18) ausstoßen zu lassen, dadurch gekennzeichnet, dass die Flüssigkeitskammern (14) zusätzlich durch Teile einer dielektrischen Schicht (51) oder Teile einer Opferschicht (40), angeordnet zwischen dem Substrat (38) und der Schicht mit geringer Spannung (42), gebunden sind, und eine Steuerschaltung, umfassend eine Vielzahl von funktionellen Vorrichtungen, die auf demselben Substrat (38) angeordnet sind, wie die Vielzahl von Paaren von Blasengeneratoren (20, 22, 44), um unabhängig Steuersignale an einen einzelnen Blasengenerator (20, 22, 44) zu übermitteln und zum Steuern der Vielzahl von Paaren von Blasengeneratoren (20, 22, 44).
Bereitstellen eines Substrats (38);
Bilden einer dielektrischen Schicht (51) mit einem ersten Teil (52) und einem zweiten Teil (50) auf dem Substrat (38);
Bilden einer Steuerschaltung, enthaltend eine Vielzahl funktioneller Vorrichtungen, auf dem ersten Teil (52) der dielektrischen Schicht (51);
Bilden einer Materialschicht mit geringer Spannung (42) auf dem zweiten Teil (50) der dielektrischen Schicht (51);
Ätzen des Substrats (38) und der dielektrischen Schichten (51), um einen Verteiler (16) sowie eine Vielzahl von Flüssigkeitskammern (14) zu bilden, wobei der Verteiler (16) und die Flüssigkeitskammern (14) in Verbindung stehen, um Flüssigkeit (26) zu den Kammern (14) zuzuführen;
Bilden einer Vielzahl von Paaren von Blasengeneratoren (20, 22, 44) auf der Materialschicht mit geringer Spannung (42), wobei jedes Paar der Blasengeneratoren (20, 22, 44) eine erste Blasen-erzeugende Vorrichtung (20, 44) sowie eine zweite Blasen-erzeugende Vorrichtung (22, 44) aufweist und mit der Steuerschaltung in Verbindung steht,
Bilden einer Öffnung (18), angeordnet zwischen der entsprechenden ersten Blasen-erzeugende Vorrichtung (20, 44) und der zweiten Blasen-erzeugende Vorrichtung (22, 44), die mit der entsprechenden Kammer (14) in Verbindung steht, um die Flüssigkeit (26) auszustoßen.
Bilden einer dünnen Oxidschicht (101) auf dem Substrat (38);
Bilden einer Siliciumnitridschicht (102) auf der dünnen Oxidschicht (101);
Oxidieren von Bereichen der dünnen Oxidschicht (101), die durch die Siliciumnitridschicht (102) nicht bedeckt sind, mittels lokaler Oxidation, um ein Feldoxid zu bilden, worin die dünne Oxidschicht (101), die durch die Siliciumnitridschicht (102) bedeckt ist, den ersten Teil (52) der dielektrischen Schicht (51) darstellt, und das Feldoxid den zweiten Teil (50) der dielektrischen Schicht (51) darstellt, und
Entfernen der Siliciumnitridschicht (102).
Implantieren von Borionen in die dielektrische Schicht (51);
Bilden eines Polysilicium-Gates (105) auf dem ersten Teil (52) der dielektrischen Schicht (51), und
Implantieren von Arsenionen in das Substrat (38) zum Bilden einer Source (106) und einer Drain (107) nahe beim Gate (105).
Ätzen des Substrats (38) von der rückwärtigen Seite, um den Verteiler (16) zu bilden;
Entfernen des zweiten Teils (50) der dielektrischen Schicht (51); und
Ätzen des Substrats (38) wieder von der rückwärtigen Seite, um die Kammern (14) zu bilden.
Bilden einer Widerstandsschicht auf der Materialschicht mit geringer Spannung (42), um ein erstes Heizgerät (20) und ein zweites Heizgerät (22) zu bilden; und
Bilden einer leitfähigen Schicht (44) auf der Widerstandsschicht, wobei die leitfähige Schicht (44) und die Widerstandsschicht verbunden sind.
Bereitstellen eines Substrats (38);
Bilden einer dielektrischen Schicht (51) mit einem ersten Teil (52) und einem zweiten Teil (50) auf dem Substrat (38);
Bilden einer Steuerschaltung, enthaltend eine Vielzahl funktioneller Vorrichtungen, auf dem ersten Teil (52) der dielektrischen Schicht (51);
Ätzen eines Abschnitts des zweiten Teils (50) der dielektrischen Schicht (51) und Bilden einer Opferschicht (40) auf dem geätzten Abschnitt des zweiten Teils (50) der dielektrischen Schicht (51);
Bilden einer Materialschicht mit geringer Spannung (42') auf der Opferschicht (40);
Ätzen eines Abschnitts des Substrats (38) und der Opferschicht (40), die keine Steuerschaltung enthält, zum Bilden eines Verteilers (16) sowie einer Vielzahl von Flüssigkeitskammern (14), wobei der Verteiler (16) mit den Kammern (14) zum Bereitstellen von Flüssigkeit (26) an die Kammern (14) in Verbindung steht;
Bilden einer Vielzahl von Paaren von Blasengeneratoren (20, 22, 44) auf der Materialschicht mit geringer Spannung (42'), wobei jedes Paar der Blasengeneratoren (20, 22, 44) mit der Steuerschaltung in Verbindung steht, und eine erste Blasen-erzeugende Vorrichtung (20, 44) und eine zweite Blasen-erzeugende Vorrichtung (22, 44) umfasst; und
Bilden einer Vielzahl von Öffnungen (18), von denen jede zwischen der entsprechenden ersten Blasen-erzeugenden Vorrichtung (20, 44) und der zweiten Blasen-erzeugenden Vorrichtung (22, 44), angeordnet ist, und mit den Flüssigkeitskammern (14) in Verbindung steht, um die Flüssigkeit (26) auszustoßen.
Bilden einer dünnen Oxidschicht (101) auf dem Substrat (38);
Bilden einer Siliciumnitridschicht (102) auf der dünnen Oxidschicht (101);
Oxidieren der dünnen Oxidschicht (101), die nicht durch die Siliciumnitridschicht (102) bedeckt ist, mittels lokaler Oxidation, zum Bilden einer Feldoxidschicht, worin die dünne Oxidschicht (101), die durch die Siliciumnitridschicht (102) bedeckt ist, den ersten Teil (52) der dielektrischen Schicht (51) darstellt, und die Feldoxidschicht den zweiten Teil (50) der dielektrischen Schicht (51) darstellt; und
Entfernen der Siliciumnitridschicht (102).
Implantieren von Borionen in die dielektrische Schicht (51);
Bilden eines Polysilicium-Gates (105) auf dem ersten Teil (52) der dielektrischen Schicht (51), und
Implantieren von Arsenionen in das Substrat (38) zum Bilden einer Source (106) und einer Drain (107) nahe beim Gate (105).
Ätzen des Substrats (38) von der rückwärtigen Seite, um den Verteiler (16) zu bilden;
Entfernen der Opferschicht (40), welche die Steuerschaltung nicht bedeckt; und
Ätzen des Substrats (38) wieder von der rückwärtigen Seite, um die Kammern (14) zu bilden.
Bilden einer Widerstandsschicht auf der Materialschicht mit geringer Spannung (42'), um ein erstes Heizgerät (20) und ein zweites Heizgerät (22) zu bilden; und
Bilden einer leitfähigen Schicht (44) auf der Widerstandsschicht, wobei die leitfähige Schicht (44) und die Widerstandsschicht mit der Steuerschaltung verbunden sind.
une pluralité de chambres de fluide (14), étant chacune délimitée par un substrat (38) et une couche à faible contrainte (42) ;
un collecteur (16) communiquant avec les chambres de fluide (14) afin de fournir un fluide (26) aux chambres (14) ;
une pluralité d'orifices (18) communiquant avec les chambres correspondantes (14) ;
une pluralité de paires de générateurs de bulles (20, 22, 44), chaque paire comprenant un premier dispositif de génération de bulles (20, 44) et un second dispositif de génération de bulles (22, 44) qui sont prévus près de l'orifice correspondant (18) et sur la surface d la couche à faible contrainte (42) opposée à la chambre correspondante (14), et dans laquelle le premier dispositif de génération de bulles (20, 44) est adapté afin de générer une première bulle en tant que soupape virtuelle dans la chambre de fluide (14) lorsque la chambre de fluide correspondante (14) est remplie de fluide (26), et le second dispositif de génération de bulles (22, 44) est adapté afin de générer une seconde bulle par la suite de façon à ce que le fluide (26) situé dans la chambre (14) soit éjecté en-dehors de l'orifice (18) ; caractérisée en ce que les chambres de fluide (14) sont délimitées en outre par les parties d'une couche diélectrique (51) ou les parties d'une couche sacrificielle (40) disposées entre le substrat (38) et la couche à faible contrainte (42) ; et
un circuit d'entraînement comprenant une pluralité de dispositifs fonctionnels est disposé sur le même substrat (38) que la pluralité de paires de générateurs de bulles (20, 22, 44), afin d'envoyer indépendamment des signaux d'entraînement à un seul générateur de bulles (20, 22, 44) et d'entraîner la pluralité de paires de générateurs de bulles (20, 22, 44).
prévoir un substrat (38) ;
former une couche diélectrique (51) ayant une première partie (52) et une seconde partie (50) sur le substrat (38) ;
former un circuit d'entraînement contenant une pluralité de dispositifs fonctionnels sur la première partie (52) de la couche diélectrique (51) ;
former une couche de matériau à faible contrainte (42) sur la seconde partie (50) de la couche diélectrique (51) ;
graver le substrat (38) et les couches diélectriques (51) afin de former un collecteur (16) et une pluralité de chambres de fluide (14), le collecteur (16) et les chambres de fluide (14) communiquant afin de fournir un fluide (26) aux chambres (14) ;
former une pluralité de paires de générateurs de bulles (20, 22, 44) sur la couche de matériau à faible contrainte (42), chaque paire de générateurs de bulles (20, 22, 44) comprenant un premier dispositif de génération de bulles (20, 44) et un second dispositif de génération de bulles (22, 44) et étant reliée au circuit d'entraînement ; et
former un orifice (18) situé entre le premier dispositif de génération de bulles correspondant (20, 44) et le second dispositif de génération de bulles (22, 44), et communiquant avec la chambre correspondante (14) afin d'éjecter le fluide (26).
former une fine couche d'oxyde (101) sur le substrat (38) ;
former une couche de nitrure de silicium (102) sur la fine couche d'oxyde (101) ;
oxyder les régions de la fine couche d'oxyde (101) non couvertes par la couche de nitrure de silicium (102) à l'aide d'une oxydation locale afin de former un oxyde de champ, où la fine couche d'oxyde (101) couverte par la couche de nitrure de silicium (102) est la première partie (52) de la couche diélectrique (51), et l'oxyde de champ est la seconde partie (50) de la couche diélectrique (51) ; et
retirer la couche de nitrure de silicium (102).
implanter des ions de bore dans la couche diélectrique (51) ;
former une porte en polysilicium (105) sur la première partie (52) de la couche diélectrique (51) ; et
implanter des ions d'arsenic dans le substrat (38) afin de former une source (106) et un drain (107) près de la porte (105).
graver le substrat (38) depuis l'arrière afin de former le collecteur (16) ;
retirer la seconde partie (50) de la couche diélectrique (51) ; et
graver le substrat (38) depuis l'arrière à nouveau afin de former les chambres (14).
former une couche de résistance sur la couche de matériau à faible contrainte (42) afin de former un premier réchauffeur (20) et un second réchauffeur (22) ; et
former une couche conductrice (44) sur la couche de résistance, la couche conductrice (44) et la couche de résistance étant reliées.
prévoir un substrat (38) ;
former une couche diélectrique (51) ayant une première partie (52) et une seconde partie (50) sur le substrat (38) ;
former un circuit d'entraînement contenant une pluralité de dispositifs fonctionnels sur la première partie (52) de la couche diélectrique (51) ;
graver une partie de la seconde partie (50) de la couche diélectrique (51), et former une couche sacrificielle (40) sur la partie gravée de la seconde partie (50) de la couche diélectrique (51) ;
former une couche de matériau à faible contrainte (42') sur la couche sacrificielle (40) ;
graver une partie du substrat (38) et la couche sacrificielle (40) qui ne comprend aucun circuit d'entraînement, afin de former un collecteur (16) et une pluralité de chambres de fluide (14), le collecteur (16) communiquant avec les chambres (14) afin de fournir un fluide (26) aux chambres (14) ;
former une pluralité de paires de générateurs de bulles (20, 22, 44) sur la couche de matériau à faible contrainte (42'), chaque paire de générateurs de bulles (20, 22, 44) communiquant avec le circuit d'entraînement et comprenant un premier dispositif de génération de bulles (20, 44) et un second dispositif de génération de bulles (22, 44) ; et
former une pluralité d'orifices (18) qui sont chacun situés entre le premier dispositif de génération de bulles correspondant (20, 44) et le second dispositif de génération de bulles (22, 44), et communiquant avec les chambres de fluide correspondantes (14) afin d'éjecter le fluide (26).
former une fine couche d'oxyde (101) sur le substrat (38) ;
former une couche de nitrure de silicium (102) sur la fine couche d'oxyde (101) ;
oxyder la fine couche d'oxyde (101) non couverte par la couche de nitrure de silicium (102) à l'aide d'une oxydation locale, afin de former une couche d'oxyde de champ, où la fine couche d'oxyde (101) couverte par la couche de nitrure de silicium (102) est la première partie (52) de la couche diélectrique (51), et la couche d'oxyde de champ est la seconde partie (50) de la couche diélectrique (51) ; et
retirer la couche de nitrure de silicium (102).
implanter des ions de bore dans la couche diélectrique (51) ;
former une porte en polysilicium (105) sur la première partie (52) de la couche diélectrique (51) ; et
implanter des ions d'arsenic dans le substrat (38) afin de former une source (106) et un drain (107) près de la porte (105).
graver le substrat (38) depuis l'arrière afin de former le collecteur (16) ;
retirer la couche sacrificielle (40) qui ne couvre pas le circuit d'entraînement ; et
graver le substrat (38) depuis l'arrière à nouveau afin de former les chambres (14).
former une couche de résistance sur la couche de matériau à faible contrainte (42') afin de former un premier réchauffeur (20) et un second réchauffeur (22) ; et
former une couche conductrice (44) sur la couche de résistance, la couche conductrice (44) étant reliée au circuit d'entraînement.
REFERENCES CITED IN THE DESCRIPTION
This list of references cited by the applicant is for the reader's convenience only. It does not form part of the European patent document. Even though great care has been taken in compiling the references, errors or omissions cannot be excluded and the EPO disclaims all liability in this regard.
Patent documents cited in the description