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(11) | EP 1 378 992 A8 |
| (12) | CORRECTED EUROPEAN PATENT APPLICATION |
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| (54) | Voltage follower |
| (57) The invention relates to a voltage follower. The voltage follower in accordance with
the invention comprises a first field-effect transistor (MN1) whose gate forms the
input of the voltage follower. Further provided is a second field-effect transistor
(MN2) whose drain connected to the gate forms the output of the voltage follower.
The sources of the two field-effect transistors (MN1, MN2) are connected to each other
and to the drain of a third field-effect transistor (MN3) serving as current source
and to the gate of which a predefined bias voltage is applied. The invention employs
in addition a fourth field-effect transistor (MN4) whose source-drain path is circuited
between the output of the voltage follower and the drain of the third field-effect
transistor (MN3) and whose gate is connected to the gate of the third field-effect
transistor (MN3). As compared to prior art voltage followers the voltage follower
in accordance with the invention comprises a wider voltage range in which it can be
put to use. This can be made use of e.g. in amplitude shift-keyed (ASK) demodulators
incorporating the voltage follower in accordance with the invention and which need
to be operated with particularly small supply voltages. |