(19)
(11) EP 1 396 018 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
16.12.2009 Bulletin 2009/51

(45) Mention of the grant of the patent:
12.08.2009 Bulletin 2009/33

(21) Application number: 02754741.3

(22) Date of filing: 04.06.2002
(51) International Patent Classification (IPC): 
H01L 21/331(2006.01)
 H01L 21/265(2006.01)
(86) International application number:
PCT/EP2002/006923
(87) International publication number:
WO 2002/101810 (19.12.2002 Gazette 2002/51)

(54)

C IMPLANTS FOR IMPROVED SIGE BIPOLAR TRANSISTORS YIELD

C-IMPLANTIERUNG FÜR VERBESSERTE PRODUKTIVITÄT VON SIGE-BIPOLARTRANSISTOREN

IMPLANTATIONS DE CARBONE POUR L'AMELIORATION DE LA CAPACITE DE TRANSISTORS DIPOLAIRES SIGE

(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU NL PT SE TR

(30) Priority: 11.06.2001 US 878605

(43) Date of publication of application:
10.03.2004 Bulletin 2004/11

(60) Divisional application:
09162231.6 / 2091076

(73) Proprietor: International Business Machines Corporation
Armonk, NY 10504 (US)

(72) Inventors:
  • COOLBAUGH, Douglas, D.
    Essex Junction, VT 04552 (US)
  • SCHONENBERG, Kathryn, T.
    New Fairfield, CT 06812 (US)

(74) Representative: Bell, Mark et al
Compagnie IBM France Département de Propriété Intellectuelle Le Plan du Bois
06610 La Gaude
06610 La Gaude (FR)


(56) References cited: : 
WO-A-98/26457
FR-A- 2 799 049
US-A- 5 441 901
 WO-A-02/061820
FR-A- 2 813 707
   
  • OSTEN H J ET AL: "Carbon doped SiGe heterojunction bipolar transistors for high frequency applications" BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1999. PROCEEDINGS OF THE 1999 MINNEAPOLIS, MN, USA 26-28 SEPT. 1999, PISCATAWAY, NJ, USA,IEEE, US, 26 September 1999 (1999-09-26), pages 109-116, XP010359498 ISBN: 0-7803-5712-4 cited in the application
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).