(19)
(11) EP 1 401 022 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 158(3) EPC

(48) Corrigendum issued on:
26.05.2004 Bulletin 2004/22

(43) Date of publication:
24.03.2004 Bulletin 2004/13

(21) Application number: 02726500.8

(22) Date of filing: 27.05.2002
(51) International Patent Classification (IPC)7: H01L 27/12
(86) International application number:
PCT/JP2002/005116
(87) International publication number:
WO 2002/097893 (05.12.2002 Gazette 2002/49)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

(30) Priority: 28.05.2001 JP 2001158927

(71) Applicant: Shin-Etsu Handotai Co., Ltd
Tokyo 100-0005 (JP)

(72) Inventors:
  • TATE, N. SHIN-ETSU HANDOTAI CO LTD. Isobe R&D Ctr
    Annaka-shi, Gunma 379-0196 (JP)
  • AGA, H., SHIN-ETSU HANDOTAI CO LTD. Isobe R&D Ctr
    Annaka-shi, Gunma 379-0196 (JP)

(74) Representative: ter Meer, Nicolaus 
Ter Meer Steinmeister & Partner GbR, Mauerkircherstrasse 45
81679 München
81679 München (DE)

   


(54) METHOD OF MANUFACTURING LAMINATED WAFER


(57) A bonded wafer 27 and a residual wafer 28 are placed in a state of being superimposed on each other on a susceptor 20 disposed in a heat treatment 10. A Bernoulli chuck 1 is moved to a wafer holding position 60 on a susceptor 20 by driving an arm 56, sucks the bonded wafer 27 positioned on the upper side and then moves to a bonded wafer recovery table 50' to recover the bonded wafer there. Then, similarly, the Bernoulli chuck 1 suction holds the residual wafer 28 at the wafer holding position 60 and then moves to a residual wafer recovery table 50" to recover the residual wafer there. With such a construction adopted, in a method for manufacturing a bonded wafer according to a so-called smart-cut method, not only is the separated bonded wafer recovered suppressing occurrence of a defect, deficiency and contamination, but there is also provided a method for manufacturing a bonded wafer capable of automation suitable for mass production.