(19)
(11) EP 1 405 341 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
06.09.2006 Bulletin 2006/36

(45) Mention of the grant of the patent:
19.07.2006 Bulletin 2006/29

(21) Application number: 02754739.7

(22) Date of filing: 04.06.2002
(51) International Patent Classification (IPC): 
H01L 21/8249(2006.01)
(86) International application number:
PCT/EP2002/006919
(87) International publication number:
WO 2003/001603 (03.01.2003 Gazette 2003/01)

(54)

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTEGRATED BICMOS CIRCUIT

BIPOLARER TRANSISTOR MIT ERHOBENER BASIS IN EINEM INTEGRIERTEN BICMOS-SCHALTKREIS

TRANSISTOR BIPOLAIRE AVEC BASE EXTRINSEQUE SURELEVEE FABRIQUE DANS UN CIRCUIT INTEGRE BICMOS

(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU NL PT SE TR

(30) Priority: 22.06.2001 US 887310

(43) Date of publication of application:
07.04.2004 Bulletin 2004/15

(73) Proprietor: International Business Machines Corporation
Armonk, NY 10504 (US)

(72) Inventors:
  • AHLGREN, David, C.
    New York, NY 12590 (US)
  • FREEMAN, Gregory, G.
    New York, NY 12533 (US)
  • HUANG, Feng, Yi
    Hacienda Heights, CA 91745 (US)
  • TICKNOR, Adam, T.
    New York, NY 12590 (US)

(74) Representative: Therias, Philippe et al
Compagnie IBM France Direction de Propriété Intellectuelle Le Plan-du-Bois
06610 La Gaude
06610 La Gaude (FR)


(56) References cited: : 
EP-A- 0 849 792
 EP-A- 0 908 939
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).