ATBECHDEDKESFRGBGRITLILUNLSE..PTIE......FI....CY..TR............................*JDIM360 (Ver 1.5 21 Nov 2005) - 2999001/01405341CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120060906W10000000084 73deBibliographieenBibliographyfrBibliographieEP02754739.72002060420031217enenen88731020010622US2006090620063620040407200415200607192006292006012020060906200636H01L 21/8249 20060101AFI20030510BHEP deBIPOLARER TRANSISTOR MIT ERHOBENER BASIS IN EINEM INTEGRIERTEN BICMOS-SCHALTKREISenBIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTEGRATED BICMOS CIRCUITfrTRANSISTOR BIPOLAIRE AVEC BASE EXTRINSEQUE SURELEVEE FABRIQUE DANS UN CIRCUIT INTEGRE BICMOSEP-A- 0 849 792EP-A- 0 908 939AHLGREN, David, C.112 Thornton Terrace, Wappingers FallsNew York, NY 12590USFREEMAN, Gregory, G.23 Sebastian Court, Hopewell JunctionNew York, NY 12533USHUANG, Feng, Yi1521 Cedarmont DriveHacienda Heights, CA 91745USTICKNOR, Adam, T.751 Route 9D, Wappingers FallsNew York, NY 12590USInternational Business Machines Corporation00200128FIS920010076New Orchard RoadArmonk, NY 10504USTherias, Philippeet al00077264Compagnie IBM France Direction de Propriété Intellectuelle Le Plan-du-Bois06610 La GaudeFRATBECHCYDEDKESFIFRGBGRIEITLILUNLPTSETREP200200691920020604enWO20030016032003010320030120030327000000