(19)
(11)
EP 1 410 427 A1
(12)
(43)
Date of publication:
21.04.2004
Bulletin 2004/17
(21)
Application number:
01944705.1
(22)
Date of filing:
14.06.2001
(51)
International Patent Classification (IPC)
7
:
H01L
21/20
,
H01L
21/36
,
H01L
21/339
,
H01L
21/31
,
H01L
21/469
(86)
International application number:
PCT/US2001/040970
(87)
International publication number:
WO 2002/103767
(
27.12.2002
Gazette 2002/52)
(84)
Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
Designated Extension States:
AL LT LV MK RO SI
(71)
Applicant:
Nanodynamics, Inc.
New York, NY 10021 (US)
(72)
Inventors:
Wang, Chia-Gee
Millwood, NY 10456 (US)
Tsu, Raphael
Charlotte, NC 28215 (US)
Lofgren, John Clay
New York, NY 10021 (US)
(74)
Representative:
Ebner von Eschenbach, Jennifer et al
Ladas & Parry,Dachauerstrasse 37
80335 München
80335 München (DE)
(54)
EPITAXIAL SIO X? BARRIER/INSULATION LAYER----------------------