(19)
(11) EP 1 410 427 A1

(12)

(43) Date of publication:
21.04.2004 Bulletin 2004/17

(21) Application number: 01944705.1

(22) Date of filing: 14.06.2001
(51) International Patent Classification (IPC)7H01L 21/20, H01L 21/36, H01L 21/339, H01L 21/31, H01L 21/469
(86) International application number:
PCT/US2001/040970
(87) International publication number:
WO 2002/103767 (27.12.2002 Gazette 2002/52)
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
Designated Extension States:
AL LT LV MK RO SI

(71) Applicant: Nanodynamics, Inc.
New York, NY 10021 (US)

(72) Inventors:
  • Wang, Chia-Gee
    Millwood, NY 10456 (US)
  • Tsu, Raphael
    Charlotte, NC 28215 (US)
  • Lofgren, John Clay
    New York, NY 10021 (US)

(74) Representative: Ebner von Eschenbach, Jennifer et al
Ladas & Parry,Dachauerstrasse 37
80335 München
80335 München (DE)

   


(54) EPITAXIAL SIO X? BARRIER/INSULATION LAYER----------------------