SEMICONDUCTOR NONVOLATILE MEMORY DEVICE

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EP 1 416 540 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	07.12.2016 Bulletin 2016/49

(45)	Mention of the grant of the patent:
	07.09.2016 Bulletin 2016/36

(21)	Application number: 02749325.3

(22)	Date of filing: 22.07.2002

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International Patent Classification (IPC):

H01L 27/115^(2006.01)
H01L 29/423^(2006.01)
H01L 29/788^(2006.01)

G11C 16/04^(2006.01)
H01L 29/792^(2006.01)

(86)	International application number:
	PCT/JP2002/007371

(87)	International publication number:
	WO 2003/012878 (13.02.2003 Gazette 2003/07)

(54)	SEMICONDUCTOR NONVOLATILE MEMORY DEVICE HALBLEITERFESTWERTSPEICHER-BAUELEMENT DISPOSITIF SEMI-CONDUCTEUR DE MÉMOIRE NON VOLATILE

(84)	Designated Contracting States:
	DE

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Priority:

27.07.2001 JP 2001227203
30.07.2001 JP 2001228870

(43)	Date of publication of application:
	06.05.2004 Bulletin 2004/19

(60)	Divisional application:
	16001382.7 / 3101694

(73)	Proprietor: Renesas Electronics Corporation
	Tokyo 135-0061 (JP)

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Inventors:

TANAKA, Toshihiro c/o Semicond.& Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
UMEMOTO, Yukiko c/o Semicond.& Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
HIRAKI, Mitsuru c/o Semicond.& Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
SHINAGAWA, Yutaka c/o HITACHI ULSI SYST CO., LTD.
Kodaira-shi, Tokyo 187-8522 (JP)
FUJITO, Masamichi c/o HITACHI ULSI SYST.CO., LTD.
Kodaira-shi, Tokyo 187-8522 (JP)
SUZUKAWA, Kazufumi c/o HITACHI ULSI SYST.CO.,LTD.
Kodaira-shi, Tokyo 187-8522 (JP)
TANIKAWA, Hiroyuki c/o Semicond.& Integr. Circ.
Kodaira-shi, Tokyo 187-8588 (JP)
YAMAKI, Takashi c/o Semicond.& Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
KAMIGAKI, Yoshiaki c/o Central Research Lab.
Kokubunji-shi, Tokyo 185-8601 (JP)
MINAMI, Shinichi c/o Semicond.& Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
KATAYAMA, Kozo c/o Semicond. & Integr. Circuits
Kodaira-shi, Tokyo 187-8588 (JP)
MATSUZAKI, Nozomu c/o Central Research Laboratory
Kokubunji-shi, Tokyo 185-8601 (JP)

(74)	Representative: Strehl Schübel-Hopf & Partner
	Maximilianstrasse 54 80538 München 80538 München (DE)

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References cited: :

JP-A- 1 133 364
JP-A- 5 082 798
JP-A- 9 326 487
JP-A- 11 177 047
JP-A- 56 135 973
JP-A- 61 172 375
JP-A- 2001 044 395
US-A- 5 691 939
US-A- 5 991 204
US-B1- 6 255 166

JP-A- 3 228 377
JP-A- 6 181 319
JP-A- 10 022 404
JP-A- 11 220 044
JP-A- 61 131 484
JP-A- 2001 015 613
US-A- 5 357 134
US-A- 5 703 388
US-A1- 2001 000 625
US-B1- 6 316 317

LUO T.Y. ET AL.: 'Effect of H2 content on reliability of ultrathin in-situ steam generated(ISSG) SiO2' IEEE ELECTRON DEVICE LETTERS vol. 21, no. 9, September 2000, pages 430 - 432, XP002965860

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).