[0001] The present invention relates to a method for producing iron garnet based ferromagnetic
material, to the material and to the use of the said ferromagnetic material to manufacture
bulk single-crystals and/or epitaxial films and to other particular uses.
[0002] Ferrites are magnetic materials widely distributed and applied in contemporary physics
and engineering. In radioelectronics, the most applicable ferrites are spinel ferrite,
iron garnet, orthoferrite, and hexaferrite. The main properties and physical parameters
of these materials have been measured for the bulk single-crystals. Among the ferrites
mentioned the most remarkable by several physical properties is ytrium iron garnet
(YIG) with the formula Y
3Fe
5O
12. Due to the fact that YIG structure contains trivalent ions of the same sort, which
do not possess orbital angular momentum, YIG is characterized by the narrowest possible
ferromagnetic linewidth 2ΔH = 0,2 - 0,5 Oe.
Among shortcomings of YIG are very small uniaxial anisotropy field H
A = 1 - 40 Oe and relatively small values of saturation magnetization 4πM = 1750 G.
These properties are essential in magnetoelectronic devices of extremely high-frequency
(EHF) band, since advance to short-wave band requires an increase in internal magnetic
field and saturation magnetization, along with a small value of FMR linewidth. Both
spinel ferrite and hexaferrite surpass YIG in H
A and 4πM values, but FMR linewidth of these ferrites is 10-100 times more than of
YIG.
It is known that to increase H
A values, YIG thin films are compressed or stretched mechanically, grown under special
conditions, or diluted with other ions. All these treatments increase 2ΔH values,
i.e. degrading resonance properties of the films. For example, to create materials
of higher saturation magnetization values comparing to YIG, Fe ions in octahedral
crystallographic sites are partially substituted with diamagnetic ions, for instance
Sc
3+, Ge
4+, Si
4+. As a result, YIG saturation magnetization value 4πM ranges up to 2000 G approaching
corresponding values of spinel ferrite and hexaferrite (2000-5000 G), but FMR linewidth
increases significantly.
Other solutions apply
La ions and
Pb ions. As a result of for example Pb introduction, anisotropy field value H
A increases, but FMR linewidth value 2ΔH increases as well. Since the lattice structure
of ferrogarnet is highly immune to isomorphic substitutions, yttrium ions
of ferrogarnet structure can be substituted with combinations of rare-earth ions,
the same as
Fe ions can be substituted with various metal ions.
Magnetic properties of the substituted ferrogarnets vary over a wide range being dependent
on chemical composition. However, all substitutions diminish microwave and resonance
properties of ferrogarnets, i.e. increase FMR linewidth and dissipation ratios.
This review of what is known in the state of the art shows that the relevant problem
of YIG for microwave applications is still to fabricate a material empowered by higher
values of anisotropy field H
A and saturation magnetization 4πM, also preserving narrow FMR linewidth close to 2ΔH
= 0,2 - 0,5 Oe. All known techniques based on Fe ion substitution in sublattices of
ferrogarnet result in decline of the material's frequency response.
[0003] The present invention solves this problem. According to the invention is provided
a method for producing iron garnet based ferromagnetic material, having the general
formula (I)
{Re
3-x-yFe
x3+,A
y}[Fe
23+](Fe
3-z3+B
z)O
12 (I)
wherein Re is one or more selected from the group of elements comprising La
3+, Pr
3+, Nd
3+, Sm
3+, Eu
3+, Gd
3+, Tb
3+, Dy
3+, Ho
3+,Er
3+, Tm
3+, Yb
3+, Y
3+, Lu
3+,
wherein A is B i
3+, Sr
2+, Ca
2+ and
wherein B is Ga
3+, Al
3+, Si
4+, Ge
4+, V
5+, Sc
3+, In
3+, Co
2+,
wherein 0< x ≤ 1,5
wherein y is zero or 1
wherein 0 ≤ z ≤ 3
and if Re is two or more elements, than Re
3-x-y means that the sum of these elements constituting Re is present in the proportion
3-x-y.
comprising the steps of:
i) forming a solution-melt comprising a mixture of polycrystalline ferrogarnets having
the general formula (II)
{Re3-y,Ay}[Fe2](Fe3-zBz)O12 (II)
and orthoferrite having the general formula (III)
ReFeO3 (III)
wherein Re, A, B, y and z are as described above;
ii) homogenization of the mixture at sufficient temperature and period of time; and
iii) supercooling of the mixture material to growth temperature such that orthoferrite
is implanted in the ferrogarnet.
[0004] In a preferred embodiment the ferromagnetic material according to the invention is
produced in a similar manner to that of yttrium iron garnet (YIG), that is in the
form of bulk single-crystals as well as epitaxial films, resulting in better EHF properties,
and higher adjustable values of anistropy field and saturation magnetization due to
Fe
3+ ions substitution only. The method according to the invention uses a solution-melt,
wherein a mixture is made from polycrystalline ferrogarnets and orthoferite in acceptable
proportions between them. Growing the iron garnet based ferromagnetic material from
solution-melt leads to the joint crystallization of garnet and ferrous orthoferite
complexes. Implantation of orthoferite complexes into garnet structure results in
partial substitution of Re for Fe
3+, and consequently emergence of additional components of uniaxial anistropy and higher
magnetization.
[0005] Producing bulk crystals of the ferromagnetic material, as well as epitaxial films
is preferably based upon crystallization from one and the same solution-melt using
flux PbO - B
2O
3 or PbO-Bi
2O
3 and a mixture of a special content. Preferably the mixture includes iron oxide Fe
2O
3, polycrystalline ferrogarnet, and polycrystalline orthoferrite in a certain proportion.
In a preferred embodiment of the general formula is x zero or is y zero, z zero and
Re yttrium. In an other preferred embodiment of the invention the mixture for solution-melt
comprises 1,4-1,6 molar percents of polycrystalline ytrium iron garnet (YIG), 14,4-14,6
molar percents polycrystalline ytrium orthoferite and 83,8-84,2 molar percents iron
oxide. In even another preferred embodiment a mixture for solution-melt is used comprising
(Y,Eu)
3(FeGa)
5O
12 and YFeO
3. The mixture preparation steps comprises an essential homogenization step, which
is generally carried out at the temperature range from 900-1100
0C, preferably from 1020-1040
0C, and for 30 to 180 minutes, preferably 60 to 120 minutes and comprises a supercooling
step which is generally carried out to growth temperature of 800-1000
0C, preferably 920-940
0C, more preferably 860-920
0C.
In a preferred embodiment of the invention the solution-melt comprises preliminary
fabricated polycrystalline compounds, such as polycrystalline ferrogarnets (according
to formula II) and orthoferite (according to formula III). It is known that when the
temperature of the solution-melt decreases quasi-crystalline clusters are being formed
from particles of crystal-forming components such as oxides, salts and metals which
remained fully dissociated before decreasing the temperature. These quasi-crystalline
structures do not match with the structure of the crystallized compound since they
are formed randomly and uncontrolled. Formation of these quasi-crystalline clusters
is considered disadvantageous since they cause degradation of the solution-melt and
lead to loss of crystal quality. To overcome this problem preliminary fabricated polycrystalline
compounds are used to be grown in the solution-melt instead of the crystal forming
components such as oxides, salts and metals. By using these preliminary fabricated
polycrystalline compounds quasi-crystalline clusters are formed under incomplete (weak
or partial) dissociation of the compounds, preserving the properties of the original
structure of the fabricated polycrystalline compounds. Comparing to the clusters described
earlier, these clusters are stable and they produce a positive effect on crystallization
processes, such as a faster and steadier crystal growth and an improved reproduction
of clusters's structure. These quasi-crystalline clusters also transfer heritable
information from the fabricated polycrystalline compounds to growing monocrystal.
This heritable information includes characteristic properties of original microcrystalline
structure of the fabricated polycrystalline compounds, such as the relationships between
chemical elements in lattice cell, interatomic distance and exchange interactions
angles between metal ions.
An other aspect of the present invention is the ferromagnetic material itself and
its use to manufacture bulk-single crystals and/or epitaxial films. Preferably ferromagnetic
material is obtained and used that possesses magnetic metastable subsystems. These
are anomalies in the regions of temperature curves, where values of basic magnetic
properties stay invariable followed by abrupt increase, instead of a gradual increase
or decrease (see Figure 1 and 3). The magnetic metastable subsystem occurs in the
claimed material as a result of an implantation of an excess of iron into the ferrite
structure. The magnetic metastable subsystem in the present invention differs from
the metastable phase in other substances in that it coexists with a main stable magnetic
phase and exhibits properties typical of liquids.
The ferromagnetic material according to the invention can for example be used in seismology,
geophysics, microwave devices, computing devices, optoelectronics, data storage, magnetostatic
waves devices, communications, mobile communications, magnetic storage and or recording
devices, generators and detectors of gravity waves and any other radio-electronic
or magneto-electronic device.
[0006] Mentioned and further features and advantages of the present invention will be appreciated
on the basis of the following drawings and examples. These examples are given for
illustration purposes and are not intended to limit the scope of the invention.
Example 1
[0007] Polycrystalline YIG 1 g of weight, 2,5 g of polycrystalline yttrium orthoferrite
YFeO
3, and 11,96 g of iron oxide were dissolved in 200 g of solvent PbO-B
2O
3. The solution-melt was homogenized at 1020 - 1040 C for 1-2 hours along with intensive
agitation simultaneously. Then solution-melt was shifted to supercooled state. After
that, with the aim to produce thin films by LPE method, on gadolinium gallium garnet
substrates (GGG), oriented in the (111) plane.
Epitaxially grown at temperature range 940 C - 920 C, with rotating substrate in solution-melt,
were single-crystal ferrogarnet films of various thickness (4-100µm). Out of the
solution-melt at ultimate low temperature of 920 C by spontaneous crystallization
were also grown bulk single crystals of ferrogarnet structure having a formula of
Y
3-xFe
5+xO
12.
X-ray diffraction analysis, as well as chemical analysis and other methods indicated
that all fabricated ferrites were single-phased, had garnet structure and its iron
content was higher than in YIG.
[0008] Table 1. displays chemical composition of the ferrite grown out of solution-melt
at temperature range 940 C - 920 C. As a standard was used YIG film grown by conventional
technology from a custom solution-melt, which chemical compound appeared to be close
to theoretical one having the formula of Y
3+ -36%; Fe
3+ - 38%; O
2- - 24%.
Table 1.
| Growth temperature |
Chemical composition of the claimed ferrite |
| Degrees Celsius, ± 1 C |
Y3+ By weight % ± 2% |
Y3+ Formula Units |
Fe3+ By weight % ± 1,5% |
Fe3+ Formula Units |
O2- by weight % |
O2- Formula Units |
| 940 |
34 |
2,9 |
39 |
5,1 |
26 |
12 |
| 935 |
31 |
2,6 |
42 |
5,4 |
27 |
12 |
| 925 |
26 |
2,0 |
47 |
6,0 |
27 |
12 |
| 920 |
20 |
1,5 |
52 |
6,5 |
28 |
12 |
| |
[0009] X-ray analysis also indicated that a lattice parameter of the claimed ferrite as
compared to YIG (a = 12,376 Å) tend towards scaling-down when increasing iron content.
Thus, if x = 0,5 then a = 12,373 Å, and if x = 1,5 then a = 12,371 Å.
[0010] Table 2. compares magnetic properties of standard YIG and the claimed ferrite.
Table 2.
| Material |
Magnetic properties |
| |
4πM, G |
HA, Oe |
2ΔH, Oe |
γ 10-7, s/Oe |
T°N, C |
| |
| Y3Fe5O12 |
1750 |
0-60 |
0,2-0,5 |
1,76 |
286 |
| Y3-xFe5+xO12 |
1750-2000 |
60-1500 |
0,2-0,5 |
1,76 |
286-270 |
[0011] An increase of x value leads to increase of an uniaxial anisotropy field H
A and saturation magnetization 4πM reaching H
A =1500 Oe and 4πM = 2000 G at x = 1,5. At that, slight increase in gyromagnetic ratio
is also registered. The most important factor is conservation of ferromagnetic resonance
(FMR) linewidth 2ΔH, whereof the Néel temperature T
N falls inconsiderably.
[0012] Results of a magneto-optic analysis with use of a polarizing microscope has shown
that single-crystal layers of the claimed ferrite have a stable strip domain structure
characterized by a very small coercive field H
C less then 0,1 Oe and a high contrast in a polarized light. The lattice constant of
the domain structure is weakly dependent on the film thickness varying from 1,5 to
10 µm at variations of the film thickness from 4 to 20 µm. If film thickness is more
than 20 µm then the domain structure type changes. The structure of custom domain
walls changes into the structure of spiroid walls.
[0013] Described ferromagnetic material exibits metastable magnetic phase observed within
400 - 430K temperature range. Figure 1 compares temperature dependency of saturation
magnetisation of films having the formula of Y
3-xFe
5+X O
12 and standard YIG film in different magnetic fields H which are parallel to film plane.
As seen on Figure 3, stepwise anomalies of temperature dependency of saturation magnetisation
are observed only in film having the formula Y
3-xFe
5-xO
12. These anomalies are the action of magnetic metastable subsystem which is present
in film having the formula Y
3-xFe
5+
xO
12.

Example 2
[0014] Polycrystalline garnet 1 g of weight having the formula Y
2.6Eu
0.4Fe
3.9Ga
1.1O
12, 2,5 g of polycrystalline yttrium orthoferrite YFeO
3, and 11,96 g of iron oxide were dissolved in 200 g of solvent PbO-B
2O
3. Epitaxial films were grown on GGG (111)substrates by LPE method, as well as single
crystals by spontaneous crystallization.
X-ray diffraction analysis and chemical analysis proved that obtained films and crystals
have the structure of a garnet of formula {Y
3+,Eu
3-x3+Fe
x3+}[Fe
23+](Fe
3-z3+Ga
z3+)O
12, where 0<x≤1.
[0015] Table 3. displays magnetic properties of obtained films comparing to properties of
ordinary ferrogarnet films having the similar composition.
Table 3.
| Material |
Magnetic properties |
| |
4πM ,G |
HA, Oe |
Hc, Oe |
2ΔH, Oe |
αRDB |
αFMR |
γ 10-7, OeS-1 |
µ, m(SOe)-1 |
| |
| {Y3+,Eu3-x3+Fex3+} [Fe23+](Fe3-z3+Gaz3+)O12 |
320 |
800 |
0,1 |
50 |
0,02 |
0,008 |
1,58 |
160 |
| (Y,Eu)3(Fe,Ga)5O12 |
180 |
1800 |
10 |
300 |
0,4 |
0,02 |
1,27 |
12 |
| Where αRDB - dissipation ratio, determined by domain walls resonance method. |
| αFMR- dissipation ratio, determined by FMR method. |
| Hc- coercive field of domain walls |
| µ - mobility of domain walls |
[0016] Table 3. displays that FMR linewidth 2ΔH of the substituted ferrite is six times
less, coercive field and dissipation ratios 100 times less, and mobility of domain
walls is 10 times higher than those observed in films of ordinary ferrogarnet.
[0017] Figure 2 represents relationship between imaginary part of magnetic susceptibility
"χ" and its frequency "ν" for new ferrite and ordinary one.

[0018] As seen on Figure 2 the resonance curve of the new ferrite is located in high frequency
region having higher peak value and smaller width as compared with the ordinary ferrogarnet.
Thus experimental findings prove that microwave and resonance properties of new ferrite
exceed significantly those of common ferrogarnets.

Figure 3
[0019] Temperature dependency of saturation magnetisation of crystals of new ferromagnetic
material having the formula of {Y
3+,Eu
3-x3+Fe
x3+}[Fe
23+](Fe
3-z3+Ga
z3+)O
12.
[0020] Such stepwise magnetisation anomalies within 20 - 100K temperature range are indicative
of the fact that the crystals contain magnetic metastable subsystem.
Example 3
[0021] Polycrystalline garnet 1 g of weight having the formula Eu
3Fe
5O
12, 2,5 g of europium orthoferrite EuFeO
3, and 11,96 g of iron oxide Fe
2O
3 were dissolved in 200 g of solvent PbO-B
2O
3. Films were grown from the solution-melt on GGG and NdGG(111)substrates. Single crystals
were produced by spontaneous crystallization. X-ray diffraction analysis and chemical
analysis displayed that obtained films and crystals have the structure of garnet having
the formula {Eu
3-x3+Fe
x3+}[Fe
23+](Fe
33+)O
12, where 0<x<1.
[0022] Saturation magnetization 4πM of the ferrite having the formula (Eu
3-
x3+Fe
x3+}[Fe
23+](Fe
33+)O
12 equals to 1350G, which is 200G more than saturation magnetization value of the ordinary
ferrogarnet having the formula Eu
3Fe
5O
12. One of the unique properties of new ferrite is anisotropy of coercive field Hc ≤
0,01 Oe. At present time none of the known ferrites possess so small Hc value.
1. Method for producing iron garnet based ferromagnetic material, having the general
formula (I)
{Re
3-x-yFe
x3+, Ay} [Fe
23+](Fe
3-z3+B
z)O
12 (I)
wherein Re is one or more selected from the group of elements comprising La
3+, Pr
3+, Nd
3+, Sm
3+, Eu
3+, Gd
3+, Tb
3+, Dy
3+, Ho
3+ ,Er
3+, Tm
3+, Yb
3+, Y
3+, Lu
3+,
wherein A is Bi
3+, Sr
2+, Ca
2+ and
wherein B is Ga
3+, Al
3+, Si
4+, Ge
4+, V
5+, Sc
3+, In
3+ , Co
2+,
wherein 0< x ≤ 1,5
wherein y is zero or 1
wherein 0≤ z ≤ 3
and if Re is two or more elements, than Re
3-x-y means that the sum of these elements constituting Re is present in the proportion
3-x-y.
comprising the steps of:
i) forming a solution-melt comprising a mixture of polycrystalline ferrogarnets having
the general formula (II)
{Re3-y,Ay}[Fe2](Fe3-zBz)O12 (II)
and orthoferrite having the general formula (III)
ReFeO3 (III)
wherein Re, A, B, y and z are as described above;
ii) homogenization of the mixture at sufficient temperature and period of time; and
iii) supercooling of the mixture material to growth temperature such that orthoferrite
is implanted in the ferrogarnet.
2. Method as claimed in claim 1, wherein the ferromagnetic material is used to manufacture
bulk single-crystals and/or epitaxial films.
3. Method as claimed in claims 1 or 2, wherein the solution-melt comprises PbO-B2O3 or PbO-Bi2O3.
4. Method as claimed in claims 1-3, wherein y is zero.
5. Method as claimed in claims 1-4, wherein Re is Y and y and z are zero.
6. Method as claimed in claims 1-5, for producing a ferromagnetic material having the
formula (IV), from a mixture of a polycrystalline ferrogarnet having the formula (V)
and a polycrystalline orthoferrite having the formula (VI).
{Y3+,Eu3-x3+Fex3+}[Fe23+](Fe3-z3+Gaz3+)O12 (IV)
(Y,Eu)3(Fe,Ga)5O12 (V)
YFeO3 (VI)
wherein:
0<x≤1;
Y3+,Eu3-x3+ means that the sum of both elements Y and Eu is present in the proportion 3-x; and
(Fe,Ga)5 means that the sum of both elements Fe and Ga is present in the proportion 5.
7. Method as claimed in claims 1-6, wherein homogenization of solution-melt is carried
out at the temperature range from 900-11000C, preferably from 1020-10400C and wherein homogenization of solution-melt is carried out for 30 to 180 minutes,
preferably 60 to 120 minutes.
8. Method as claimed in claim 1-7, wherein supercooling is carried out till growth temperature
of 800-10000C, preferably 920-9400C, more preferably 860-9200C.
9. Method as claimed in claims 1-8, wherein the mixture for solution-melt comprises 1,4-1,6
molar percents of polycrystalline ytrium iron garnet (YIG), 14,4-14,6 molar percents
polycrystalline ytrium orthoferite and 83,8-84,2 molar percents iron oxide.
10. Method as claimed in claims 1-9, wherein the solution-melt comprises preliminary fabricated
polycrystalline compounds.
11. Ferromagnetic material as obtainable with the method according to claims 1-10.
12. Ferromagnetic material according to claim 11, containing a magnetic metastable subsystem
exhibiting itself within 20-100K and 400 - 420K temperature ranges.
13. Use of a ferromagnetic material according to claim 11 or 12, to manufacture bulk single-crystals
and/or epitaxial films.
14. Use of a ferromagnetic material according to claim 11 or 12 in seismology, geophysics,
microwave devices, computing devices, optoelectronics, data storage, magnetostatic
waves devices, communications, mobile communications, magnetic storage and or recording
devices, generators and detectors of gravity waves and any other radio-electronic
or magneto-electronic device.