(19)
(11) EP 1 420 464 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
14.09.2011 Bulletin 2011/37

(45) Mention of the grant of the patent:
04.05.2011 Bulletin 2011/18

(21) Application number: 02762793.4

(22) Date of filing: 16.08.2002
(51) International Patent Classification (IPC): 
H01L 39/22(2006.01)
 H01L 39/24(2006.01)
(86) International application number:
PCT/JP2002/008320
(87) International publication number:
WO 2003/019684 (06.03.2003 Gazette 2003/10)

(54)

HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION, SUPERCONDUCTING ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR FORMING THE HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION

HOCHTEMPERATURSUPRALEITENDER JOSEPHSON-KONTAKT, SUPRALEITENDES ELEKTRONISCHES BAUELEMENT DAMIT UND VERFAHREN ZUR HERSTELLUNG DES HOCHTEMPERATURSUPRALEITENDEN JOSEPHSON-KONTAKTS

JONCTION JOSEPHSON DE SUPRACONDUCTEURS HAUTE TEMPERATURE, PROCEDE DE FABRICATION ASSOCIE ET DISPOSITIF ELECTRONIQUE SUPRACONDUCTEUR COMPRENANT LADITE JONCTION

(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

(30) Priority: 22.08.2001 JP 2001251137
08.03.2002 JP 2002064448

(43) Date of publication of application:
19.05.2004 Bulletin 2004/21

(73) Proprietor: International Superconductivity Technology Center, The Juridical Foundation
Tokyo 135-0062 (JP)

(72) Inventors:
  • ADACHI, Seiji
    Tokyo 135-0062 (JP)
  • WAKANA, Hironori
    Tokyo 135-0062 (JP)
  • TANABE, Keiichi
    Tokyo 135-0062 (JP)

(74) Representative: Ilgart, Jean-Christophe et al
BREVALEX 95 rue d'Amsterdam
75378 Paris Cedex 8
75378 Paris Cedex 8 (FR)


(56) References cited: : 
JP-A- 1 145 878
JP-A- 5 037 030
JP-A- 2002 141 564
 JP-A- 2 277 275
JP-A- 10 074 989
US-B1- 6 275 716
   
  • HEINSOHN J-K ET AL: "Current transport in ramp-type junctions with engineered interface" JOURNAL OF APPLIED PHYSICS, vol. 89, no. 7, 1 April 2001 (2001-04-01), pages 3852-3860, XP012053215
  • APPELBOOM H M ET AL: "Lanthanum and calcium doped YBa2Cu3Oy films grown at low temperature and pressure" PHYSICA C, vol. 221, no. 1-2, 1994, pages 125-135, XP022799142
  • WAKANA H ET AL: "Influence of counter-layer deposition condition on critical current spread in interface-modified ramp-edge junction arrays" JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2, vol. 41, no. 3A, 1 March 2002 (2002-03-01), pages L239-L242, XP002532137
  • TAKEHIKO MAKITA ET AL.: 'Fabrication and characterization of Y-Ba-Cu-O and Nd-Ba-Cu-O ramp-edge junctions with an interface-modified barrier' IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY vol. 11, no. 1, March 2001, pages 155 - 158, XP002958979
  • TAKEHIKO MAKITA ET AL.: 'Fabrication of ramp-edge junction with NdBa2Cu3Oy-based interface-modified barrier' JN. J. APPL. PHYS. vol. 39, no. 7B, 15 July 2000, pages L730 - L732, XP000977856
   
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