(19)
(11) EP 1 426 970 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
31.07.2013 Bulletin 2013/31

(45) Mention of the grant of the patent:
10.04.2013 Bulletin 2013/15

(21) Application number: 03257633.2

(22) Date of filing: 04.12.2003
(51) International Patent Classification (IPC): 
G11C 13/00(2006.01)
 G11C 11/56(2006.01)

(54)

Semiconductor memory device and method for correcting a reference cell

Halbleiterspeicheranordnung und Verfahren zur Korrektur einer Referenzzelle

Dispositif de mémoire à semiconducteurs et procédé de correction d'une cellule de référence

(84) Designated Contracting States:
DE FR GB IT

(30) Priority: 04.12.2002 JP 2002353052

(43) Date of publication of application:
09.06.2004 Bulletin 2004/24

(73) Proprietor: Sharp Kabushiki Kaisha
Osaka 545-8522 (JP)

(72) Inventor:
  • Matsuoka, Nobuaki
    Nara 632-0004 (JP)

(74) Representative: Brown, Kenneth Richard et al
R.G.C. Jenkins & Co 26 Caxton Street
London SW1H 0RJ
London SW1H 0RJ (GB)


(56) References cited: : 
WO-A-02/27729
US-A1- 2002 159 308
 WO-A-90/12400
US-B1- 6 473 332
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).