Method of forming a semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion

(19)

(11)

EP 1 429 383 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	13.08.2008 Bulletin 2008/33

(43)	Date of publication A2:
	16.06.2004 Bulletin 2004/25

(21)	Application number: 03104678.2

(22)	Date of filing: 12.12.2003

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International Patent Classification (IPC):

H01L 21/768^(2006.01)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
	Designated Extension States:
	AL LT LV MK

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Priority:

12.12.2002 US 318309

(71)	Applicant: TEXAS INSTRUMENTS INC.
	Dallas, Texas 75265 (US)

(72)	Inventors:
	Faust, Richard A. 75214, Dallas (US) Russell, Noel M. 75025, Plano (US) Chen, Li 78704, Austin (US)

(74)	Representative: Holt, Michael et al
	Texas Instruments Limited European Patents Department 800 Pavilion Drive Northampton NN4 7YL 800 Pavilion Drive Northampton NN4 7YL (GB)

(54)	Method of forming a semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion

(57) A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a dielectric layer (226) in a fixed position relative to the wafer, where the dielectric layer comprises an atomic concentration of each of silicon, carbon, and oxygen. After the forming step, the method exposes (118) the electronic device to a plasma such that the atomic concentration of carbon in a portion of the dielectric layer is increased and the atomic concentration of oxygen in a portion of the dielectric layer is decreased. After the exposing step, the method forms a barrier layer (120) adjacent at least a portion of the dielectric layer.

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