(19)
(11) EP 1 453 159 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
13.12.2017 Bulletin 2017/50

(45) Mention of the grant of the patent:
06.09.2017 Bulletin 2017/36

(21) Application number: 02803072.4

(22) Date of filing: 28.10.2002
(51) International Patent Classification (IPC): 
H01S 5/323(2006.01)
 C30B 29/38(2006.01)
(86) International application number:
PCT/IB2002/004441
(87) International publication number:
WO 2003/043150 (22.05.2003 Gazette 2003/21)

(54)

LIGHT EMITTING DEVICE STRUCTURE USING NITRIDE BULK SINGLE CRYSTAL LAYER

LICHTEMITTIERENDER VORRICHTUNGSAUFBAU MIT EINER NITRID-BULK-EINKRISTALL-SCHICHT

STRUCTURE D'UN DISPOSITIF EMETTANT DE LA LUMIERE A COUCHE MONOCRISTALLINE NON EPITAXIEE DE NITRURE

(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

(30) Priority: 26.10.2001 PL 35037501
26.06.2002 PL 35473902

(43) Date of publication of application:
01.09.2004 Bulletin 2004/36

(73) Proprietors:
  • Ammono S.A.
    00-493 Warszawa (PL)
  • Nichia Corporation
    Anan-shi Tokushima 774-8601 (JP)

(72) Inventors:
  • DWILINSKI, Robert
    PL-01-875 Warsaw (PL)
  • DORADZINSKI, Roman
    PL-02-793 Warsaw (PL)
  • GARCZYNSKI, Jerzy
    PL-05-092 Lomianki (PL)
  • SIERZPUTOWSKI, Leszek
    Union, NJ 07083-7944 (US)
  • KANBARA, Yasuo, c/o NICHIA CORPORATION
    Anan-shi, Tokushima 774-8601 (JP)

(74) Representative: Vossius & Partner Patentanwälte Rechtsanwälte mbB 
Siebertstrasse 3
81675 München
81675 München (DE)


(56) References cited: : 
EP-A- 0 961 328
JP-A- 8 250 802
US-A1- 2001 022 154
 EP-A2- 0 716 457
US-A1- 5 780 876
   
  • KETCHUM D R ET AL: "Crystal growth of gallium nitride in supercritical ammonia" JOURNAL OF CRYSTAL GROWTH ELSEVIER NETHERLANDS, vol. 222, no. 3, January 2001 (2001-01), pages 431-434, XP002445191 ISSN: 0022-0248
  • SWILINSKI R. ET AL.: 'On GaN crystallization by ammonothermal method' ACTA PHYSICA POLONICA A vol. 90, no. 4, 1996, pages 763 - 766, XP002963489
  • PAKULA K. ET AL.: 'Growth of GaN metalorganic chemical vapor deposition layers on GaN single crystals' ACTA PHYSICA POLONICA A vol. 88, no. 5, 1995, pages 861 - 864, XP002963490
  • AKITO KURAMATA ET AL.: 'III-V zoku chikkabutsu handotai ni okeru kiban no kadai' OYOBUTSURI vol. 65, no. 9, 1996, pages 936 - 940, XP002963491
   
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