(19)
(11) EP 1 456 875 A2

(12)

(88) Date of publication A3:
11.03.2004

(43) Date of publication:
15.09.2004 Bulletin 2004/38

(21) Application number: 02799299.9

(22) Date of filing: 23.12.2002
(51) International Patent Classification (IPC)7H01L 21/322, H01L 29/36, H01L 29/167
(86) International application number:
PCT/US2002/041269
(87) International publication number:
WO 2003/060982 (24.07.2003 Gazette 2003/30)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
Designated Extension States:
AL LT LV MK RO

(30) Priority: 21.12.2001 US 345178 P

(71) Applicant: MEMC Electronic Materials, Inc.
St. Peters,Missouri 63376 (US)

(72) Inventors:
  • LUCIANO, Mule StagnoMEMC Electro. Materials Inc.
    St. Peters, MO 63376 (US)
  • LIBBERT, Jeffrey L.,MEMC Elect. Materials Inc.
    St. Peters, MO 63376 (US)
  • PHILLIPS, Richard, J.,MEMC Elect. Materials,Inc.
    St. Peters, MO 63376 (US)
  • KULKARNI, Milind,MEMC Elect. Materials, Inc.
    St. Peters, MO 63376 (US)
  • BANAN, Mohsen M,MEMC Electr. Materials, Inc.
    St. Peters, MO 63376 (US)
  • BRUNKHORST, Stephen J.,MEMC Electr. Materi. Inc.
    501 Pearl Drive, P.O. Box 8 (US)

(74) Representative: Jackson, Richard Eric et al
Carpmaels & Ransford,43-45 Bloomsbury Square
London WC1A 2RA
London WC1A 2RA (GB)

   


(54) IDEAL OXYGEN PRECIPITATING SILICON WAFERS WITH NITROGEN/CARBON STABILIZED OXYGEN PRECIPITATE NUCLEATION CENTERS AND PROCESS FOR MAKING THE SAME