FIELD EFFECT TRANSISTOR HAVING PERIODICALLY DOPED CHANNEL - Patent 1464086

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(11)

EP 1 464 086 A2

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(88)	Date of publication A3:
	03.07.2003

(43)	Date of publication:
	06.10.2004 Bulletin 2004/41

(21)	Application number: 02720273.8

(22)	Date of filing: 26.04.2002

(51)	International Patent Classification (IPC)⁷: H01L 29/78, H01L 29/10, H01L 21/336, H01L 21/266

(86)	International application number:
	PCT/GB2002/001948

(87)	International publication number:
	WO 2003/032398 (17.04.2003 Gazette 2003/16)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

09.10.2001 RU 2001127264

(71)	Applicant: Freewire Limited
	Monmouth,Monmouthshire NP25 5AT (GB)

(72)	Inventors:
	SMIRNOV, Valery Yaroslavl, 150003 (RU) KIBALOV, Dimitry Yaroslavl, 150051 (RU) GERGEL, Victor Moscow, 121002 (RU)

(74)	Representative: Engel, Christoph Klaus
	Engel & Weihrauch,Patent- und Rechtsanwälte,Marktplatz 6 98527 Suhl/Thüringen 98527 Suhl/Thüringen (DE)

(54)	FIELD EFFECT TRANSISTOR HAVING PERIODICALLY DOPED CHANNEL