BACKGROUND OF THE INVENTION
Field of the Invention
[0001] The present invention relates to lead frames, optical communication connector cases,
optical amplifier cases, and heat sinks for semiconductor devices.
[0002] Priority is claimed on Japanese Patent Application No. 2003-124746, filed April 30,
2003, the content of which is incorporated herein by reference.
Description of Related Art
[0003] The material conventionally used for lead frames for integrated circuit devices and
so forth is, for example, an Fe-Ni alloy or a Cu alloy which has comparable of thermal
expansion coefficients as that of Si as a material for device. Cu, Al, Au, Mo, and
their alloys or Cu-W alloys and Cu-Mo alloys which are excellent in thermal conductivity
are used as materials for a heat sink which dissipates the heat generated from a CPU
(Central Processing Unit), and which are provided inside or outside of the package
of a personal computer (refer to Japanese Unexamined Patent Application, First Publication
No. Hei 10-8166, pages 2 to 3). In this reference patent, a copper alloy to which
is added 10 to 30% by weight of Cr, and which made the thermal expansion coefficient
of the copper alloy approximate that of a semiconductor device, and which was improved
the strength, is disclosed. Moreover, Cu or Cu alloys, Al, Mo, Cu-W alloys or Cu-Mo
alloys and so forth are used for the material for connector cases of optical communication
and optical amplifier cases, in the reference.
[0004] With the miniaturization and integration of electronic device such as personal computers,
cellular phones, and optical devices, heat generation during operation of the devices
has become more of a problem in recent years, and therefore the problem describe below
occurs in the prior art.
[0005] In order to prevent distortions between a device and a lead frame by heat, and a
bad connection, a material which has almost the same thermal expansion coefficient
as a material for device such as Si and which is capable of dissipating the generated
heat, is required as a material for a lead frame. A Fe-Ni alloy which is used conventionally
has low thermal conductivity and is insufficient at dissipating the heat. Although
Cu or conventional Cu alloy has high thermal conductivity, it is distorted by heat
due to a higher heat expansion coefficient than a material for device.
[0006] Furthermore, due to the trend of replacing the conventional plastics package material
of the semiconductor device with one of ceramics because of higher integration and
greater speed in the future, a material which has good thermal conductivity for dissipating
heat as a heat sink material, and has comparable thermal expansion coefficient as
the ceramics to be used in the package, is required. However, Al, Cu, and conventional
Cu alloys have a problem in packages made from ceramics since Al, Cu, and conventional
Cu alloys have higher thermal expansion coefficients than ceramics packages, although
they have high thermal conductivity. On the other hand, Cu-W alloys, Cu-Mo alloys,
and so forth have high thermal conductivity and lower thermal expansion coefficients
than conventional Al, Cu, and Cu alloys, and it is thereby possible to approximate
the thermal expansion coefficient of these alloys to that of ceramics; however, these
alloys are expensive. If elemental Mo is used, it is expensive and is difficult to
machine to form a heat sink due to the high strength.
[0007] In addition, a material having a comparable thermal expansion coefficient to that
of glass, and having superior heat dissipating properties in order to prevent the
shift of light paths inside and wavelength variations of lasers due to temperature
variations, is required for connector cases of optical communication or optical amplifier
cases. However conventional Al and Cu are insufficient since the thermal expansion
coefficients thereof are high. On the other hand, the above Cu-W alloys and Cu-Mo
alloys are superior in their properties; however, W and Mo as raw materials are very
expensive and thereby increase material costs. These Cu-W alloys and Cu-Mo alloys
are generally manufactured by an infiltration method in which powders of W and Mo
are sinter molded to be sponge-like, and the sponge-like W and Mo are impregnated
with molten Cu, since W and Mo have high melting point, and W and Mo do not react
each other. However, the impregnation is technically difficult and process yield is
low, and then the manufacturing cost is increased. Furthermore, in the case of use
of elemental Mo, it is expensive and it is difficult to machine it to form a heat
sink due to the high strength thereof.
[0008] The present invention was made in view of these problems. An object of the present
invention is to provide a copper alloy which has superior thermal conductivity which
is comparable to that of the conventional material, a lower thermal expansion coefficient
than conventional copper, and is capable of being produced at a lower cost.
[0009] The first aspect of the present invention is a copper alloy comprising B at 0.01
to 10.0 % by weight, and the balance containing Cu, and inevitable impurities.
[0010] In the present invention, by adding B to Cu, a compound phase including B having
a low thermal expansion coefficient is formed in Cu, and the thermal expansion coefficient
is lower than that of Cu which does not include B.
[0011] The above copper alloy preferably comprises B at 0.1 to 8.1 % by weight and the balance
containing Cu and inevitable impurities and total volume ratio of elemental B and
Cu-B intermetallic compound at 0.6 to 39.0 % by volume based on total volume.
[0012] The second aspect of the present invention is a copper alloy comprising B at 0.01
to 10.0 % by weight, and at least one element selected from the group of Mg, Ni, Co,
Al, Si, Fe, Zr, and Mn at 0.05 to 40.0 % by weight in total amount, the balance containing
Cu and inevitable impurities, and total volume ratio of elemental B and an intermetallic
compound B with at least one element selected from the group of Cu, Mg, Ni, Co, Al,
Si, Fe, Zr, and Mn at 1 to 80 % by volume based on total volume, and the weight of
Mg contained is no more than 5 times the weight of B contained in the case in which
Mg is included, and the weight of Al contained is not more than 10 times the weight
of B contained in the case in which Al is included.
[0013] In the present invention, by adding B and at least one element selected from the
group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn to Cu, a B group intermetallic compound
comprising B elemental phase, Cu-B alloy phase, Cu-X-B alloy phase, and X-B alloy
phase all having low thermal expansion coefficients are formed in Cu, and this compound
becomes a copper alloy having high thermal conductivity and low thermal expansion
coefficient. Here, X represents at least one element selected from the group of Mg,
Ni, Co, Al, Si, Fe, Zr, and Mn. In the case in which Mg is included in the alloy,
by controlling the content of Mg to no more than 5 times that of B, the thermal expansion
coefficient is prevented from becoming high though use of Mg having a high thermal
expansion coefficient. Furthermore, in the case in which Al is included in the alloy,
by controlling the content of Al to be no more than 10 times that of B, the thermal
expansion coefficient is prevented from becoming high by using Al having a high thermal
expansion coefficient.
[0014] The above copper alloy comprising B at 0.1 to 9.8 % by weight, and 0.5 to 40.0 %
by weight in total of at least one element selected from the group of Mg, Ni, Co,
Al, Si, Fe, Zr and Mn, and the balance containing Cu and inevitable impurities, and
the total volume ratio of an elemental B and an intermetallic compound B with at least
one element selected from the group of Cu, Mg, Ni, Co, Al, Si, Fe, Zr, and Mn at 3.0
to 74.5 % by volume based on total volume, is preferable.
[0015] When the above copper alloy includes Mg, for example, Mg-B intermetallic compound
is formed. The above copper alloy of the present invention does not exhibit high thermal
expansion coefficient since the Mg-B intermetallic compound has low thermal expansion
coefficient, even though the Mg having a high thermal expansion coefficient is used.
[0016] When the above copper alloy includes Al, for example, Al-B intermetallic compound
is formed. The above copper alloy of the present invention does not exhibit high thermal
expansion coefficient since the Al-B intermetallic compound has low thermal expansion
coefficient, even though the Al having a high thermal expansion coefficient is used.
[0017] Furthermore, the copper alloy of the present invention is, for example, manufactured
by a casting process or powder sintering method.
[0018] According to the present invention, by adding B, at least one selected from the group
of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn to Cu, a copper alloy having high thermal conductivity
and low thermal expansion coefficient due to the B group intermetallic compound having
low thermal expansion coefficient, is formed in Cu. B forms intermetallic compounds
reacting with other elements easily, and it allows production of an alloy by the casting
process from molten metal or the powder sintering method, and thereby the production
cost can be reduced.
DETAILED DESCRIPTION OF THE INVENTION
[0019] Below, the copper alloy of the present invention will be explained in detail. The
inventors of the present application discovered that Cu-B alloy and Cu-X-B alloy are
effective materials to solve the problem. Here, X represents at least one element
selected from the group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn. The copper alloy of
the present invention has superior thermal conductivity and electrical conductivity
comparable to that of the conventional copper alloy and has lower thermal expansion
coefficient than copper. Specifically, a copper alloy which is in the state including
copper at no less than 20 % by volume, has high thermal conductivity no less than
100W/m·K, and this results in superior performance comparable to that of Cu-W alloy,
Mo and so forth, in applications which require dissipating heat.
The copper alloy in the present invention may be produced by the casting process since
the melting temperature decreases by the interaction between B or X and Cu, and by
forming intermetallic compound of X and B, although B or X have high melting temperature.
Furthermore, the copper alloy in the present invention may be produced by the powder
sintering method in the case in which the component segregates inside the alloy material
by using a casting process. In this powder sintering method, the copper alloy in the
present invention may be produced at low sintering temperature since B or X reacts
with Cu. The copper alloy in the present invention is produced inexpensively in comparison
with Cu-W alloys and Cu-Mo alloys which are produced by an infiltration method since
the copper alloy of the present invention is easier to solid-disperse in Cu with a
phase comprising other elements than is the conventional copper alloy.
[0020] Next, the reasons for the limitation of each component in the copper alloy of the
present invention are explained.
[0021] B: from 0.01 to 10.0% by weight
[0022] B has a low thermal expansion coefficient, and when B is added to Cu, a phase having
a low thermal expansion coefficient in Cu is formed. B is easy to mix or chemically
combine with other elements, and the phase including B is thereby easy to disperse
into Cu. Accordingly, by adding B to Cu, a copper alloy having low thermal expansion
coefficient and homogeneous characteristics can be obtained. If the content of B is
less than 0.01 % by weight, the thermal expansion coefficient and thermal conductivity
are comparable to those of Cu and no effect of further addition could be obtained.
On the other hand, if the content of B is more than 10.0 % by weight, the deviation
of thermal expansion coefficient in each production lot become big and difficult to
handle because of the brittleness of the material. In the copper alloy of the present
invention, it is preferable that the content of B be from 0.1 to 8.1 % by weight and
that the content of volume ratio of elemental B and Cu-B intermetallic compound be
from 0.6 to 39.0 % by volume.
[0023] Mg, Ni, Co, Al, Si, Fe, Zr, and Mn: total amount is from 0.05 to 40.0 % by weight
[0024] Mg, Si, and Zr easily form a compound phase with Cu. Cu alloys according to the present
invention exist in the state of intermetallic compounds of Mg, Al, Si, and Zr with
Cu, which includes B. If the content of Mg, Si, or Zr is less than 0.05 % by weight,
the advantage of addition could not be obtained since the thermal expansion coefficient
and thermal conductivity are comparable to that of copper. On the other hand, if the
content of any of these elements is more than 40.0 % by weight, cracks occur and the
compact is difficult to use as a compact. Co and Fe are elements which do not solid
disperse with Cu; however, in the copper alloy of the present invention, Co and Fe
form intermetallic compounds having low thermal expansion coefficients by bonding
B, and they maintain the state of intermetallic compounds. The intermetallic compounds
comprising B and Co and/or Fe, has a lower melting point than elements in the elemental
state and thereby the intermetallic compound melts at a lower temperature, the segregation
while casting and fine dispersion is performed. Elemental Ni is solid dispersible
with Cu; however, Ni-B alloy compounds do not significantly solid disperse with Cu
and thereby Ni-B-Cu alloy behave in the same ways as the above Co and Fe-B alloy compounds.
At this time, when the addition amount of Co, Fe, and Ni is less than 0.05% by weight,
the thermal expansion coefficient does not decrease. When the addition amount of Co,
Fe, and Ni is more than 40.0 % by weight, dispersion to Cu is insufficient and thereby
cracking of the compact tends to occur while molding in a casting process or powder
sintering method. In the copper alloy according to the present invention, it is preferable
that the content of B be from 0.1 to 9.8 % by weight and that the total content of
at least one element selected from the group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn
be at 0.5 to 40.0 % by weight.
[0025] Total amount of elemental B, and intermetallic compound of B with at least one element
selected from Cu, Mg, Ni, Co, Al, Si, Fe, Zr and Mn: from 1.0 to 80.0 % by volume.
[0026] When the total volume ratio of elemental B, and intermetallic compound of B with
at least one element selected from Cu, Mg, Ni, Co, Al, Si, Fe, Zr and Mn is less than
1.0 % by volume, the thermal expansion coefficient of the alloy decreases insufficiently
in comparison with that of Cu. When the volume content ratio of elemental B, and intermetallic
compound of B with at least one element selected from Cu, Mg, Ni, Co, Al, Si, Fe,
Zr, and Mn is more than 80.0 % by volume, the thermal conductivity falls below 100
W/m·K which is the value comparable to those of Cu-W alloys, Mo, and so forth. In
the copper alloy according to the present invention, the total volume ratio of the
intermetallic compound of Cu with elemental B, and at least one element selected from
the group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn is from 3.0 to 74.5 % by volume in
total volume.
[0027] The content of Mg: 5 times or less of the content of B (mass ratio)
[0028] Mg has high thermal expansion coefficient as an element; however, the thermal expansion
coefficient decreases by bonding with B and by forming Mg-B intermetallic compound.
In the case of adding Mg, the content of Mg in the copper alloy is controlled to be
5 times or less the content of B in mass ratio. When the ratio of Mg is higher than
5 times the B in mass ratio, a Mg phase having a high thermal expansion coefficient
is formed and the thermal expansion coefficient become high.
[0029] The content of Al: 10 times or less of the content of B (mass ratio)
[0030] Al as an element has as high a thermal expansion coefficient as Mg; however, the
thermal expansion coefficient decreases by bonding B and by forming Al-B intermetallic
compounds. In the case of adding Al, the content of Al in copper alloy is controlled
to be 10 times or less of the content of B in mass ratio. When the ratio of Al is
higher than 10 times of B in mass ratio, an Al phase having a high thermal expansion
coefficient is formed, and the thermal expansion coefficient become higher than that
of Cu.
[0031] Next, the production method of the copper alloy of the present invention will be
explained. The copper alloy of the present invention is produced by the casting process
or the powder sintering method. In the case of producing by the casting process, for
example, Cu or the raw material of Cu-B and Ni-B is melted and cast by the high-frequency
melting method. In these processes, the melting temperature and the controlling of
atmosphere and so forth are timely adjusted depending on the material used. After
soaking at 600 to 1000°C, a hot rolling, a cold strip, and other processes are performed,
and the alloy is molded to a predetermined shape. In the case in which the above casting
process has problems of the occurrence of cracks in the compact or the unsatisfactory
dispersion of the added elements, the alloy may be produced by the powder sintering
method. In the method of sintering, Cu or Cu-B powder, and at least one element selected
from Mg, Ni, Co, Al, Si, Fe, Zr, and Mn, and powder produced from these element and
B are mixed to be a objective component and a mold of predetermined shape is used
and these powder are sintered at 600 to 900°C in an inert gas. The above powder sintering
method is preferably applied when the content of B is at least 5 % by weight or the
content of other added elements is at least 20% by weight.
[0032] The copper alloy according to the present invention is processed to form lead frames,
optical communication connector cases, and heat sinks for semiconductor devices and
so forth. These compact using the copper alloy according to the present invention
have lower thermal expansion coefficient than that of the compact using copper, and
the electrical conductivity and thermal conductivity are superior to those of the
conventional compact using Fe-42Ni and so forth. The copper alloy according to the
present invention has at least 100 W/m·K (approximately 1/4 of that of Cu) of thermal
conductivity at the same level of those of Cu-W alloy, Mo, and so forth which are
used for the conventional optical communication connector cases, heat sinks for semiconductor
devices, and so forth. The copper alloy of the present invention can be provided at
lower cost than these alloys.
[0033] In a copper alloy according to the present invention, by adding B, and at least one
element selected from a group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn to Cu, B group
intermetallic compound having low thermal expansion coefficient in Cu is formed, thereby
the material having low thermal expansion coefficient can be produced while maintaining
high thermal conductivity which is a feature of the copper alloy. Since B easily generates
intermetallic compounds reacting with other elements, the copper alloy can be produced
by a casting process from molten metal which is a relatively easy method. The copper
alloy of the present invention can be produced by the powder sintering method. The
copper alloy can be produced at lower cost than Cu-W alloys, Cu-Mo alloys, and so
forth those are produced by special production methods such as the infiltration method.
By selecting low-cost B compounds which are added to the alloy, the raw material cost
can be reduced.
Examples
[0034] Below, examples of the present invention are explained in comparison with comparative
examples which are outside the range of the present invention. In the first examples
of the present invention, oxygen free copper or base material of Cu-B alloy and so
forth were melted in vacuo by using the high-frequency melting method and B in an
amount within the range of the present invention, was added to the above molten metal.
This molten metal with B was cast into an ingot of 12 mm square, heated at 600 to
900°C for 1 hour, and rolled to be 3 mm plate by hot rolling. After these steps, heat
treatment at 600 to 900°C was provided and the alloy plate was processed into a test
piece having a shape required for the measurement, and the copper alloy samples of
Example 1 and Example 2 were obtained. After mixing the powder B and powder of Cu
or Cu-B wherein the content of powder B is within the range of the present invention,
the mixture was sintered at 600 to 1000°C in inert gas. After this sintered body was
processed to a test piece, the shape of which is required for the measurement, a heat
treatment at 600 to 900°C was provided, and processed into a copper alloy sample of
Example 3. In the same process as Example 3, a copper alloy sample of Comparative
Example 1 in which the B content is higher than that of the present invention was
obtained.
[0035] The thermal expansion coefficient and thermal conductivity were measured for the
above copper alloys of Examples 1 to 3, the copper alloy of Comparative Example 1,
Cu (Comparative Example 2), Mo (Comparative Example 3) and Fe-42Ni (Comparative Example
4). The thermal expansion coefficient was measured by a differential transformer method
within the range from 20 to 150°C, and the average was taken. The thermal conductivity
was measured in accordance with Japanese Industrial Standard JIS-A1412, at 25°C. The
volume content was calculated from data measured from phase areas of B or phase areas
including B, based on the total area, by taking some photos at 100 to 400 magnification
of each sample. These results are shown in Table 1.
Table 1
|
Alloy component |
Component weight ratio (wt%) |
Content of B and B intermetallic compound (vol %) |
Thermal expansion coefficient (×106/K) |
Thermal conductivity (W/m·K) |
|
|
B |
Balance |
|
|
|
Example 1 |
Cu- B |
0.17 |
Cu + inevitable impurities |
0.6 |
16.7 |
362 |
Example 2 |
Cu-B |
1.96 |
14.5 |
15.7 |
216 |
Example 3 |
Cu-B |
8.06 |
38.3 |
13.0 |
128 |
Comparative Example 1 |
Cu-B |
16.34 |
82.5 |
8.4 |
72 |
Comparative Example 2 |
Cu |
0.00 |
0.0 |
17.3 |
395 |
Comparative Example 3 |
Mo |
- |
- |
- |
5.1 |
138 |
Comparative Example 4 |
Fe-42Ni |
- |
- |
- |
4.2 |
17 |
[0036] As shown in Table 1, copper alloys of Examples 1 to 3 produced in the range according
to the present invention have a thermal expansion coefficient lower than that of Cu,
and a thermal conductivity higher than 100 W/m·K. In contrast, the copper alloy of
Comparative Example 1 whose ratio of elements except Cu by volume is higher than the
range according to the present invention, have a thermal conductivity lower than 100
W/m·K and sufficient heat dissipation cannot be expected. The copper alloy of the
Comparative Example 1 is produced by the powder sintering method, the sintered body
was extremely brittle and difficult to handle.
[0037] In the second examples of the present invention, copper alloys of Example 4 to 36
which are within the range of the present invention by the same process as the first
Example using the casting process or the powder sintering method and copper alloys
of Comparative Example 5 to 13, which are outside range of the present invention,
are produced. In the casting process, the high frequency melting method was employed.
The oxygen free high conductivity copper, base material of Cu-B alloy, and so forth
were melted to a molten state in vacuo or in an Ar atmosphere, B and at least one
element selected from Mg, Ni, Co, Al, Si, Fe, Zr, and/or Mn was added to the molten
metal wherein the content of each element or the alloy ofNi-B, Fe-B, Cu-Mg, and so
forth becoming the predetermined content. This is cast into an ingot of 12 mm square,
and heated at 600 to 900°C for 1 hour, and the cast was rolled to be 3 mm plate by
hot rolling. After these steps, heat treatment at 600 to 900°C was provided and processed
into a test piece having a shape which is required for the measurement. On the other
hand, in the case of the powder sintering method, an X powder from B and at least
one element selected from Mg, Ni, Co, Al, Si, Fe, Zr, and/or Mn was prepared. After
mixing X powder, Cu or powder of Cu-B in the predetermined content of each element
to be added, the mixed powder was sintered at 600 to 1000°C in an inert gas. The sintered
body was processed to a test piece having a shape which is required for the measurement,
and a heat treatment at 600 to 900°C was provided.
[0039] As shown in Tables 2 and 3, the copper alloys of Examples 4 to 36, which are produced
within the range of the present invention, have lower thermal expansion coefficients
than that of copper and higher thermal conductivities than 100 W/m·K. In contrast,
the copper alloy of Comparative Examples 5 and 6, which are outside of the range of
the present invention shown in Table 4, have higher thermal conductivity than that
of Cu shown in Table 1. This result occurred because Mg, which was solidly dispersed
in Cu, makes the thermal expansion coefficient of the alloy high due to the content
of Mg being 5 times or more the content of B in mass ratio. In the same manner, the
alloy of Comparative Example 10 has a higher thermal expansion coefficient of that
of Cu due to the content of Al being 10 times or more than the content of B in mass
ratio. In the copper alloy of Comparative Example 8, the content of B and Zr are within
the range of the present invention; however, the thermal expansion coefficient of
the alloy was lower than that of Cu and the thermal conductivity was under 100 W/m·K
due to the volume ratio of B and the intermetallic compound including B exceeded 80
% by volume. In the copper alloys of Comparative Examples 7, 11 and 13, the materials
exhibited cracks during the casting process and a test piece for the measurement could
not be obtained, even in the powder sintering process, due to the addition content
of elements other than B exceeding 40 % by weight. The copper alloys of Comparative
Examples 9 and 12 were extremely brittle due to the addition content of the elements
other than B exceeding 40 % by weight, and the thermal conductivity was lower than
100 W/m·K due to the volume content of the intermetallic compound exceeding 80 % by
volume.
[0040] While preferred embodiments of the invention have been described above, it should
be understood that these are exemplary of the invention and are not to be considered
as limiting. Additions, omissions, substitutions, and other modifications can be made
without departing from the spirit or scope of the present invention. Accordingly,
the invention is not to be considered as being limited by the foregoing description,
and is only limited by the scope of the appended claims.
1. A copper alloy comprising:
0.01 to 10.0 % by weight of B, and
the balance being Cu and inevitable impurities.
2. A copper alloy according to claim 1 comprising:
0.1 to 8.1 % by weight of B, and
the balance being Cu and inevitable impurities, and
the total volume ratio of elemental B and Cu-B intermetallic compound is 0.6 to 39.0
% by volume based on total volume.
3. A copper alloy comprising:
0.01 to 10.0 % by weight of B, and
at least one element selected from the group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn
at 0.05 to 40.0 % by weight in total amount,
the balance being Cu and inevitable impurities, and
total volume ratio of elemental B and an intermetallic compound B with at least one
element selected from a group of Cu, Mg, Ni, Co, Al, Si, Fe, Zr, and Mn at 1 to 80
% by volume based on total volume, and
the content of Mg by weight is not more than 5 times of the content of B by weight,,
and
the content of Al by weight is not more than 10 times of the content of B by weight.
4. A copper alloy according to claim 3 comprising:
0.1 to 9.8% by weight of B, and
at least one element selected from the group of Mg, Ni, Co, Al, Si, Fe, Zr, and Mn
at 0.5 to 40.0 % by weight in total weight,
the balance being Cu and inevitable impurities, and
total volume ratio of elemental B and an intermetallic compound B with at least one
element selected from the group of Cu, Mg, Ni, Co, Al, Si, Fe, Zr, and Mn is from
3.0 to 74.5 % by volume based on total volume.
5. A copper alloy according to claims 3 and 4, further comprising a Mg-B intermetallic
compound.
6. A copper alloy according to any one of claims 3 to 5, further comprising an Al-B intermetallic
compound is formed.
7. A copper alloy according to any one of claims 1 to 6, wherein the alloy is manufactured
by a casting process.
8. A copper alloy according to any one of claims 1 to 6, wherein the alloy is manufactured
by a powder sintering method.