[0001] The present invention relates to OLED color displays and, more particularly, to arrangements
of light emitting elements in such OLED color displays.
[0002] US Patent Application No. 2002/0186214A1 by Siwinski et al., published December 12,
2002, shows a method for saving power in an organic light emitting diode (OLED) display
having pixels comprised of red, green, blue and white light emitting elements. The
white light emitting elements are more efficient than the other colored light emitting
elements and are employed to reduce the power requirements of the display.
[0003] While power efficiency is always desirable, it is particularly desirable in portable
applications because an inefficient display limits the time the device can be used
before the power source is recharged. In fact, for certain applications the rate of
power consumption may be more important than any other display characteristic with
the exception of visibility. Referring to Fig. 2, an arrangement of four pixels 10
having red 12, green 14, blue 16 and white 18 light emitting elements as taught by
Siwinski is shown. The light emitting elements in each pixel are arranged in a two
by two array.
[0004] Widely used text rendering software such as
Microsoft ClearType™ relies upon displays in which the colored elements of the display are arranged to
form vertical stripes. Such arrangements are known in LCD displays that have pixels
comprised of red, green, and blue light emitting elements. An example of such an arrangement
is shown in Fig. 3, however this arrangement does not provide the power savings of
the display device taught by Siwinski.
[0005] There is a need, therefore, for an improved full-color flat-panel OLED display having
improved power efficiency while maintaining full-color reproduction and compatibility
with a stripe-pattern arrangement.
[0006] The need is met by providing a color OLED display that includes an array of light
emitting OLED pixels, each pixel having three or more gamut elements for emitting
different colors of light specifying a gamut and at least one additional element for
emitting a color of light within the gamut and wherein the power efficiency of the
additional element is higher than the power efficiency of at least one of the three
or more gamut elements; wherein all of the gamut elements for each color in the display
are arranged in a first direction in a line such that no differently colored gamut
element is in the line; wherein the colored gamut elements are arranged in a second
direction orthogonal to the first direction in a line such that the colors of the
gamut elements alternate in that line; and wherein the additional elements are arranged
in lines in both the first and second directions.
[0007] The advantages of this invention are a color display device with improved power efficiency
and compatibility with stripe pattern arrangements.
Fig. 1 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to one embodiment of the present invention;
Fig. 2 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to the prior art;
Fig. 3 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to the prior art;
Fig. 4 is a side view of a portion of a top-emitting OLED display according to one
embodiment of the present invention;
Fig. 5 is a side view of a portion of a bottom-emitting OLED display according to
one embodiment of the present invention;
Fig. 6 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to an alternative embodiment of the present invention;
Fig. 7 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to another alternative embodiment of the present invention;
Fig. 8 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to another alternative embodiment of the present invention;
Fig. 9 is a schematic diagram of a portion of an OLED display having light emitting
elements arranged according to another alternative embodiment of the present invention;
Fig. 10 is a side view of a portion of a top-emitting OLED display according to another
embodiment of the present invention;
Fig. 11 is a circuit layout diagram of a portion of the pixel area of an OLED display
of the type shown in Fig. 7;
Fig. 12 is a detailed layout diagram of a portion of the pixel area of an OLED display
shown in Fig. 11;
Fig. 13 is a cross sectional diagram of one light emitting element in an OLED display;
Fig. 14 is an alternative circuit layout diagram of a portion of the pixel area of
an OLED display of the type shown in Fig. 7;
Fig. 15 is a more detailed layout diagram of a portion of the pixel area of an OLED
display shown in Fig. 14;
Fig. 16 is another alternative circuit layout diagram of a portion of the pixel area
of an OLED display of the type shown in Fig. 7;
Fig. 17 is a more detailed layout diagram of a portion of the pixel area of an OLED
display shown in Fig. 16;
Fig. 18 is another alternative layout diagram of a portion of the pixel area of an
OLED display of the type shown in Fig. 8; and
Fig. 19 is a schematic side view of an OLED light emitting element according to the
prior art.
[0008] Referring to Fig. 1, an OLED display according to the present invention includes
an array of light emitting OLED pixels
10, each pixel having three or more gamut elements such as red
12, green
14, blue
16 light emitting elements for emitting different colors of light specifying a gamut
and at least one additional element such as white light emitting element
18 for emitting a color of light within the gamut. The power efficiency of the additional
element is higher than the power efficiency of the gamut elements so that by driving
the additional element in place of the gamut elements, the power consumption of the
display may reduced. All of the gamut elements for each color in the display are arranged
in a first direction Y in a line such that no differently colored gamut element is
in the line. The colored gamut elements are arranged in a second direction X orthogonal
to the first direction in a line such that the colors of the gamut elements alternate
in that line. This arrangement of light emitting elements is compatible with text
rendering software that requires stripe-pattern displays. The light emitting elements
in the pixels are all individually addressable using conventional means.
[0009] According to the present invention, luminance that would conventionally be produced
by a combination of lower power efficiency gamut elements can instead be produced
by the higher power efficiency additional elements. Thus, any color that can be reproduced
using the additional elements will be more efficient than an equivalent reproduction
using the gamut elements. A suitable transformation function may be provided by a
signal processor that converts a standard color image signal to a power saving image
signal that is employed to drive the display of the present invention.
[0010] The present invention can be employed in most OLED device configurations that include
four or more OLEDs per pixel. These include very unsophisticated structures comprising
a separate anode and cathode per OLED to more sophisticated devices, such as passive
matrix displays having orthogonal arrays of anodes and cathodes to form pixels, and
active-matrix displays where each pixel is controlled independently, for example,
with a thin film transistor (TFT).
[0011] Referring to Fig. 4, a top-emitting OLED display having a plurality of light emitting
elements includes a single layer of white light emitting material 30 formed on a substrate
20. A plurality of electrodes
22, 24, 26, and
28 separated by insulators
29 define the light emitting elements
12, 14, 16 and
18 (see Fig. 1). A second transparent electrode 32 is formed on the white-light emitting
organic material
30. Red
42, green
44, blue
46 color filters are provided over the electrodes
22,
24, and
26 respectively so that when white light is emitted from the organic layer
30, red light
52 is emitted above electrode
22, green light
54 is above electrode
24, and blue light
56 is above electrode 26. Unfiltered, white light
58 is emitted above electrode
28. A transparent encapsulating cover (not shown) is provided over the device. Alternative
arrangements of the electrodes
22-28 and color filters
42-46 may be provided as described below. Moreover, an additional filter (not shown) may
be supplied above the white emitter to adjust the white point of the light emitted
from the additional light emitting elements.
[0012] Referring to Fig. 5, in a bottom-emitting arrangement, light is emitted through the
substrate
20. In this arrangement, the second electrode
32 need not be transparent while the first electrodes
22, 24, 26, and
28 are transparent. The color filters
42, 44, 46, and a white point adjusting filter
48 are formed on the substrate
20 prior to forming the light emitting elements.
[0013] The present invention provides compatibility with color stripe patterns preferred
for rendering text. In the simplest arrangement, as shown in Fig. 1, an additional
white element is provided in sequence after the gamut elements. Referring to Fig.
1, a series of columns of each color are composed of pixels 10 having color light
emitting elements red
12, green
14, blue
16, and white 18. In the vertical direction, the elements form a single colored striped
line. In an orthogonal, horizontal direction, the colored lines alternate sequentially.
It should be noted that the light emitting element arrangements shown in the embodiment
described in Fig. 1 and in the embodiments described below can be reflected or rotated
without changing their properties.
[0014] In the arrangement shown in Fig. 1, the additional white light emitting elements
18 are arranged to alternate with the green light emitting elements
14 so that the white and green elements are spatially symmetric, which may enhance the
luminance resolution of the display since white and green both carry a relatively
large amount of luminance information in a display.
[0015] Referring to Fig. 6, in a slightly different arrangement, the white and green elements
18 and
14 are arranged between the red and blue elements
12 and 16. The white element
18 may also be placed between the green
14 and blue 16 elements (not shown). These two configurations have the advantage of
positioning the additional white element more centrally within the pixel. Since white
light is a combination of colors, positioning the white light element in a central
position within the pixel may provide a viewer with an experience more consistent
with the experience from a conventional stripe pattern.
[0016] Referring to Fig. 7, in an alternative embodiment, the additional element
18 may be arranged with respect to the gamut elements to spatially integrate the light
from the pixel
10. For example, the additional element
18 may be located beneath (or above) the gamut elements. Since the additional (in-gamut)
element emits light that would otherwise be emitted from gamut elements, locating
the additional element
18 such that its light emission is located near all the gamut elements will provide
compatibility with a stripe arrangement and form a spatially integrated light source.
[0017] Referring to Fig. 11, a circuit pattern diagram for an active matrix display of the
type shown in Fig. 7 is shown. The light emitting elements are connected to select
lines
113, data lines
112a or
112b or
112c or
112d, power lines
111a, 111b or
111c, and capacitor lines
114. To operate the display, rows of light emitting elements are selected by applying
a voltage to a single select line, which turns on the select transistors
120 of the connected light emitting elements. The brightness level for each light emitting
element is controlled by a voltage signal, which is held on the data lines. The storage
capacitor
130 of each selected element is then charged to the voltage level of the associated data
line
112a, 112b,
112c or
112d. Within each light emitting element, the storage capacitor is connected to the gate
of the power transistor
140 so that the voltage level held on the storage capacitor regulates the current flow
through the power transistor
140 to the light emitting elements' organic EL element
11 and thereby brightness is controlled. Each row is then un-selected by applying a
voltage signal to the select line
113 which turns off the select transistor
120. The data line
112 voltages are then set to the levels desired for the next row and the select line
of the next row is turned on. This is repeated for every row of light emitting elements.
The storage capacitors
130 maintain the data voltage until the row is selected again during the next image frame.
[0018] The power lines are typically connected to a common voltage level for all light emitting
elements. As shown here, the light emitting elements
12, 14, and
16 are connected to a different select line than light emitting element
18. This means that the brightness level of light emitting element
18 is written at a different time than that of light emitting elements
12, 14, and
16. However, an alternate configuration where a pixel is defined as being composed of
light emitting elements
18, 12a, 14a, and
16a, would result in the brightness level of all light emitting elements within the pixel
being adjusted simultaneously and is understood to be within the scope of the invention.
[0019] Fig. 12 shows a layout pattern diagram for the active matrix circuit of Fig. 11 as
described above. The drive circuitry components are fabricated using conventional
integrated circuit technologies. Light emitting element
12, for example, consists of a select transistor
120a formed from a first semiconductor region
121a using techniques well known in the art. Similarly, a power transistor
140a is formed in a second semiconductor region
141a. The first semiconductor region
121a and second semiconductor region
141a are typically formed in the same semiconductor layer.
[0020] This semiconductor layer is typically silicon which may be amorphous, polycrystalline,
or crystalline. This first semiconductor region
121a also forms one side of the storage capacitor 130a. Over the first semiconductor region
121a and second semiconductor region
141a is an insulating layer (not shown) that forms the gate insulator of the select transistor
120a, the gate insulator for power transistor
140a, and the insulating layer of the storage capacitor
130a. The gate of the select transistor
120a is formed from part of the select line
113a which is formed in the first conductive layer.
[0021] The power transistor
140a has a separate gate conductor
143a also preferably formed in the first conductive layer. The other electrode of the
storage capacitor
130a is formed as part of capacitor line
114a, also preferably from the first conductive layer. The power line
111a and the data lines
112a respectively, are preferably formed in a second conductive layer. One or more of
the signal lines (e.g. select line
113a) frequently cross at least one or more of the other signal lines (e.g. data line
112a), which requires these lines to be fabricated from multiple conductive layers with
at least one interlayer insulating layer (not shown). The organic EL element is formed
by patterning a first electrode
181a for each pixel as well as depositing one or more layers of organic EL media (not
shown) and a second electrode (not shown).
[0022] Connections between layers are formed by etching holes (or vias) in the insulating
layers such as the first via
122a connecting data line 112a, to the first semiconductor region
121a of the select transistor, the second via
142a connecting the power transistor gate conductor
143a to first semiconductor region 121a of the storage capacitor
130a and the select transistor
120a, the third via
146a connecting the second semiconductor region
141a of the power transistor to power line
111a, and the fourth via
145a connecting the second semiconductor region
141a of the power transistor to the first electrode
181a.
[0023] Over the first electrode, an inter-element insulating film is formed to reduce shorts
between the anode and the cathode. Use of such insulating films over the first electrode
is disclosed in US 6,246,179 issued June 12, 2001 to Yamada. The inter-element insulating
film is coated over all the light emitting elements of the display and openings are
made to allow the first electrodes to connect to the OLED layers (not shown). For
light emitting element
12, opening
191a is formed in the inter-pixel dielectric over the first electrode
181a. Opening
191a defines the area of the light emitting element which will emit light. While use of
the inter-element insulating film is preferred, it is not required for successful
implementation of the invention.
[0024] Light emitting elements
14 and
16 are formed similarly to light emitting element
12 and are connected to data lines
112b and
112c respectively as well as to power lines
111b and
112c respectively.
[0025] Light emitting element
18 is connected to select line
113b, capacitor line
114b, data line
112d, and power line
111c. Light emitting element
18 can alternately be connected to power line
111b or
111a or be provided a unique power line not shared by light emitting elements having other
colors by someone skilled in the art. Like light emitting element 12, light emitting
element
18 consists of a select transistor
120b, a storage capacitor
130b, and power transistor
140b. The select transistor and capacitor are constructed with a first semiconductor region
121b. The power transistor is constructed with a second semiconductor region
141b and a gate electrode
143b connected to the first semiconductor region by via
142b, to power line
111c by via
146b, and to the first electrode
181b by via
145b.
[0026] For light emitting element
18, in order to connect the first semiconductor region
121b to data line
112d, data line
112a must be crossed. This is done using first conductive bridge
150 which is preferably constructed of the first conductive layer. The conductive bridge
is connected to data line
112d by via
151b and to the first semiconductor region by via
151a. While use of first conductive bridge
150 is preferred, it is not required, and other connection methods including connecting
the first semiconductor region
121b directly to data line
112d can be achieved by someone skilled in the art. Furthermore, depending on how the
data lines are arranged, the conductive bridge maybe applied to a light emitting element
other than light emitting element
18. For example, if the locations of data line
112a and data line
112d were reversed, then the conductive bridge may be applied to light emitting element
12 instead of light emitting element
18. Furthermore, more than one conductive bridge may be used to pass data lines on more
than one light emitting element.
[0027] Light emitting element 18 also preferably uses a second conductive bridge
152 to connect the second capacitor electrode
131 to the capacitor line
114b bridging over the select line
113b. The second conductive bridge
152 is preferably constructed in the second conductive layer. The second conductive bridge
152 connects to the second capacitor electrode
131 by via
153b and to capacitor line
114b by via
153a. As with the first conductive bridge
150, by rearranging the components and connection lines, the second conductive bridge
may be located on a light emitting element (or more than one light emitting element)
other than light emitting element
18. Variations of the light emitting elements can be constructed without a second conductive
bridge if the select lines and capacitor lines are fabricated of different conductive
layers.
[0028] The first electrode
181b of light emitting element
18 stretches across several signal lines such as power lines
111a and
111b as well as data lines
112b and
112c. These regions are not emitting in a bottom emission configuration and may be covered
with inter-pixel dielectric. This results in three separate openings in the inter-element
dielectric
191x, 191y, and
191z which results in three separate emitting regions for light emitting element
18.
[0029] The light emitting elements of the present invention have been shown and have been
described as configured in a bottom-emission configuration. If the device were to
be configured in a top-emission configuration, the first electrodes can be increased
in size and made to extend over the other various circuit components and signal lines.
The openings in the inter-pixel dielectric can be increased in a similar fashion.
In this case, the light emitting element 18 would not need to be provided multiple
separate openings, and thereby multiple separate emitting regions, but could instead
be provided one larger continuous opening and emitting region. Such a configuration
is envisioned as being consistent with the present invention.
[0030] While the above embodiments have been described with reference to a specific configuration
of the active matrix circuit, several variations of the conventional circuit which
are known in the art can also be applied to the present invention by someone skilled
in the art. For example, one variation such as that shown in US 5,550,066 issued August
27, 1996 to Tang et al. does not have a separate capacitor line but instead connects
the capacitors directly to the power line. A second variation as shown in US 6,476,419
issued November 5, 2002 to Yasuda uses two capacitors disposed directly over each
other where the first capacitor is fabricated between the semiconductor layer and
the gate conductor layer and the second capacitor is fabricated between the gate conductor
layer and the second conductor layer. Either of these variations can be applied to
the present invention by someone skilled in the art.
[0031] While the circuit requires a select transistor and a power transistor for each light
emitting element, several variations of these transistor designs are known in the
art. For example, single and multi-gate versions of transistors are known and have
been applied to the select transistors in prior art. A single gate transistor contains
a gate, a source and a drain. An example of the use of a single gate type of transistor
for the select transistor is shown in US 6,429,599 issued August 6, 2002 to Yokoyama.
A double transistor contains at least two gates electrically connected together and
therefore a source, a drain, and at least one intermediate source-drain between the
gates. An example of the use of a multi-gate type of transistor for the select transistor
is shown in US 6,476,419, referenced above. This type of transistor can be represented
in a circuit schematic by a single transistor or two or more transistors in series
which have their gates connected and the source of one transistor connected directly
to the drain of the second transistor. While the performance of these transistor designs
may differ, both types of transistors serve the same function in the circuit and either
type can be applied to the present invention by someone skilled in the art. The example
of the preferred embodiment of the present invention is shown with a multi-gate type
select transistor
120 represented by a single transistor symbol.
[0032] Also known in the art is the use of multiple parallel transistors to which is typically
applied the power transistor
140. Multiple parallel transistors are described in US 6,501,448 issued December 31,
2002 to Komiya et al. Multiple parallel transistors consist of two or more transistors
with their sources, drains, and gates all electrically connected together. However,
the location of the multiple transistors are separated in location within the pixels
providing multiple parallel paths for current flow. The use of multiple parallel transistors
has the advantage of providing robustness against variability and defects in the semiconductor
layer manufacturing process. While the power transistor described in the embodiments
of the present invention are shown as a single transistor, this can be replaced by
multiple parallel transistors by someone skilled in the art and are therefore understood
to be within the spirit of the invention.
[0033] Alternate circuit types are also known in the art such as constant current source
driving schemes. An example of a constant current source device is provided in US
6,501,466 issued December 31, 2002 to Yamagishi et al. Alternate circuit types can
be applied to the present invention by someone skilled in the art.
[0034] Turning now to Fig. 13, the vertical arrangement of the various layers from Fig.
12 are shown. The drive circuitry is disposed over substrate
20 and under OLED layer
310 in a manner herein described. Layer
310 includes a hole injecting layer
311, a hole transporting layer
312, a light emitting layer
313, and an electron transporting layer
314. Over the substrate
20, a semiconductor layer is formed, doped, and patterned creating the second semiconductor
region
141a. A gate insulating layer
212 is formed over the semiconductor layer. Over the gate insulating layer
212, a gate conductor is formed in the first conductor layer. The semiconductor layer
is then doped to form source and drain regions on either sides of the gate conductor
143a. A first interlayer insulator layer
213 is formed over the gate conductor
143a. Over the first interlayer insulator layer
213, a second conductor layer is deposited and patterned forming the first power lines
(e.g.
111a) and the data lines (e.g.
112a and
112d). A second interlayer insulator layer
214 is formed over the power and data lines (e.g.
111a, 112a, etc.). The first electrode
181a is formed over the second interlayer insulator layer
214. The first electrode
181a is patterned. Around the edges of the first electrode
181a, an inter element dielectric film
220 is formed to reduce shorts between the first electrode
181a and the second electrode
320.
[0035] Referring to Fig. 14, an alternate arrangement of the drive circuitry is shown. In
Fig. 14, the arrangement of the data lines and power lines has been configured such
that there are two power lines
111a and
111b per pixel in a row. In this example, light emitting elements
14 and
18 share power line
111a. Light emitting element
16 shares a power line
111b with a light emitting element from an adjacent pixel. That is, light emitting element
14 is connected to a power line
111b of a adjacent pixel. This arrangement has fewer power lines per pixel than the arrangement
in Fig. 11 and each power line carries the current load from two light emitting elements.
[0036] Fig. 15 shows a layout pattern diagram for the active matrix circuit of Fig. 14 as
described above. This pattern has the same transistor and capacitor components as
described in Fig 12. In order to achieve the desired two power lines per pixel, several
conductive bridge structures are utilized as described above. The first conductive
bridge
154 is connected to the first semiconductor region
121a of light emitting element
12 by via
155a and to a power line
111b by via
155b bridging over data line
112d. The second conductive bridge
152 connects the second capacitor electrode
131 of light emitting element
18 to the capacitor line
114b bridging over the select line
113b. The third conductive bridge
156 connects to the second semiconductor region
141b of light emitting element
18 by via
157b and to power line
111a by via
157a.
[0037] While these conductive bridges are shown as part of particular light emitting elements,
they may be located on other light emitting elements other than those shown. While
use of the conductive bridges is preferred, they are not required to successfully
practice the present invention.
[0038] Referring now to Fig. 16, an alternate arrangement of the pixel circuit of the first
embodiment is shown. In Fig. 16, the arrangement of the data lines and power lines
for two adjacent pixels
10 and
9 have been configured such that there are three power lines
111a, 111b, and
111c for every two pixels in a row. In this example, light emitting elements
16, 18, 12b, and
18b are all connected to power line
111b. This arrangement has fewer power lines per pixel than the arrangements in Fig. 11
and Fig. 14.
[0039] Fig. 17 shows a layout pattern diagram for the active matrix circuit of Fig. 16 as
described above. This pattern has the same transistor and capacitor components as
described in the Fig 12. In order to achieve the desired three power lines per two
pixels, the layout of light emitting elements
12b, 14b, 16b, and 18b are reversed with respect to light emitting elements
12, 14, 16, and
18. The power transistor
140c of light emitting element
16 and the power transistor
140i of light emitting element
12b are both connected to power line
111b. Therefore these transistors can be formed from the same semiconductor region
141c and contact can be made between the semiconductor region
141c and the power line
111b using the same via
146i. Similarly, the power transistor
140d of light emitting element
18 and the power transistor
140L of light emitting element
18b are both connected to power line
111b. Therefore these transistors can be formed from the same semiconductor region
141d and contact can be made between the semiconductor region
141d and the power line
111b using the same via
146L. While using the same via and semiconductor region for the above-mentioned transistors
is desirable, it is not required to successfully practice the invention.
[0040] Referring to Fig. 8, in an alternative embodiment, the white element
18 is arranged near the center of the pixel
10. Each pixel
10 includes the red
12, green
14, and blue
16 elements as conventionally arranged except that the center element
14 is smaller. The additional element
18 is located below (or above) the center element. Since a white element effectively
emits light that would otherwise be emitted from all three color elements, locating
the white element
18 such that the white light emission is located near the center of all three color
elements will provide compatibility with a stripe arrangement.
[0041] Referring to Fig. 18, a layout pattern is shown where the white light emitting element
18 and the green light emitting element
14 are aligned into a single stripe as illustrated in Fig. 8. Any of the circuit layout
examples described above can be made to drive this arrangement. The example shown
in Fig. 18 shows a system with two power lines per pixel in a row. When arranged such
that light emitting elements
14 and
18 form a stripe, only a single opening
190d in the inter-element dielectric layer is required for light emitting element
18.
[0042] The display is capable of presenting all of the colors presented by a standard three
color, red, green, blue OLED display device. The color of the white OLED
18 may be designed to match the white point of the display. In this embodiment, the
signal processor used to drive the display is configured to allow any gray value,
including white, which would typically be presented using a combination of the red
12, green
14, and blue
16 color OLEDs to be created using primarily the white OLED
18. To achieve this, the peak luminance of the white OLED
18 is designed to match the combined luminance of the red
12, green
14, and blue
16 OLEDs. That is, in a typical configuration where the prior art display would be designed
to achieve a peak luminance of 100 cd/sq. m, the red
12, green
14, and blue 16 OLEDs will be set up to produce this peak luminance when they are all
turned on to their maximum value and the white OLED
18 will also be designed to provide this same peak luminance.
[0043] It should be noted however, that under certain circumstances it may be desirable
to design the color of the additional element
18 to provide a color point other than the display white point inside the gamut defined
by the red, green, and blue elements. For example by biasing the color of the additional
or "white" element
18 towards the color of one of the gamut elements, the designer reduces the reliance
of the display on gamut element toward which the additional element is biased.
[0044] It may also be desirable to set the peak luminance of the additional element to other
luminance values, including lower values, such as half the luminance of the peak luminance
of the combined gamut elements which increases the reliance on the gamut elements
while reducing the reliance on the additional element. The peak luminance of the additional
element may also be designed to higher values, such as one and a half times the peak
luminance of the combined gamut elements. However, this bias can result in loss of
saturation for colors that are high in luminance that should be rendered as high in
saturation.
[0045] Once the display is designed to provide the correct luminance value for each element,
a suitable method is employed to map from a conventional three-channel data signal
to a four-channel signal, for example using a suitable look-up table. Methods of generating
lookup tables for converting a three channel data signal to drive a display having
four or more color channels are well-known in the art, for example, US 6,075,514 issued
June 13, 2000 to Ryan, provides one such method. Alternatively, the conversion may
be accomplished in real time using an algorithm that specifies the conversion.
[0046] Because the transform from three to four colors is nondeterministic, (i.e. many colors
in the conventional specification can be created with either combinations of the gamut
elements alone or in one of many combinations with the additional element), different
conversions are possible. However, by selecting the peak luminance of the additional
element to match the combined peak luminances of the gamut elements, it is possible
to perform the conversion to allow the additional element to provide as much luminance
to each color as possible while maintaining saturation of all colors. This approach
provides the maximum power savings possible with the present invention.
[0047] Various other embodiments of this invention may also be practiced. A second particularly
useful embodiment includes the use of several different OLED materials that are doped
to provide multiple colors. For example, the red
12, green
14, blue
16 and white
18 OLEDs may be composed of different OLED materials that are doped to produce different
colored OLEDs. Referring to Fig. 10, in this embodiment, on each first electrode
22-28 a different layer of organic light emitting diode materials
62-68 respectively is formed. Over the organic light emitting diode materials a second
electrode
32 is formed. Each of the organic light emitting diode materials (e.g.,
62, 64, 66 and
68) are formed from a hole injecting layer, a hole transporting layer, a light emitting
layer, and an electron transporting layer as described in more detail below.
[0048] In this embodiment, the light emitting layer and potentially other layers within
the stack of organic light emitting diode materials are selected to provide a red,
green, blue, and white light emitting elements. One light emitting diode material
62 emits light primarily in the long wavelength or red portion of the visible spectrum.
A second light emitting diode material
64 emits light primarily in the middle wavelength or green portion of the visible spectrum.
A third light emitting diode material
66 emits light primarily in the short wavelength or blue portion of the visible spectrum.
Finally, the fourth light emitting diode material
68 emits light in a broad range of wavelengths, producing a white OLED. In this way,
the four different materials form a four-OLED display including red, green, blue,
and white OLEDs.
[0049] In this implementation, OLEDs formed from materials that are doped to produce different
colors may have significantly different luminance efficiencies and therefore it may
be desirable to select a white OLED with chromaticity coordinates that are biased
towards the chromaticity coordinate of the OLED with the lowest power efficiency.
By selecting the chromaticity coordinate of the white OLED in this way, the element
with the lowest power efficiency is replaced more often by the white OLED, decreasing
the overall power usage.
[0050] Further, within this implementation, the different OLEDs may need to be driven at
different levels to produce a color-balanced display. It is important to realize that
the stability of OLED materials is inversely related to the current density that is
used to drive the OLED. The lifetime of an OLED is influenced by the stability (i.e.,
the current density used to drive the OLED), therefore, the need to drive some elements
with a higher current density may shorten the life of the OLEDs of the given color.
Further, OLED materials that are doped to produce different colors typically have
different luminance stabilities. That is, the change in luminance output that occurs
over time is different for the different materials. To account for this, a material
may be employed for the white OLED having a chromaticity coordinate that is positioned
closer to the OLED with the shortest luminance stability than to the chromaticity
coordinates of the other gamut defining OLEDs. Positioning the white OLED according
to this criteria reduces the overall usage of the closest gamut-defining OLED, extending
the lifetime of the closest gamut-defining OLED.
[0051] In the embodiments that have been discussed above, it is important to note that because
the additional element is significantly more efficient than the gamut elements, the
current density or power required to drive the additional element is significantly
lower than for the gamut elements. It is also important to note that the luminance
stability over time of the materials used to create the light emitting elements is
typically related to the current density used to drive the elements through a very
non-linear function in which the luminance stability over time of the material is
much poorer when driven to higher current densities. In fact, the function used to
describe this relationship can typically be described as a power function. For this
reason, it is not desirable to drive any elements to current densities that are higher
than a given threshold where the function describing the luminance stability over
time is particularly steep. At the same time, it may be desirable to achieve maximum
display luminance values that would typically require the gamut elements to be driven
to this current density.
[0052] In the embodiments described thus far, the various light emitting elements will have
different efficiencies and lifetimes. To optimize a display device for various applications
it is useful to use different sized elements. For example, in applications for which
black-and-white use dominates, the additional white OLED elements can be increased
in size. It should also be recognized that as the amount of luminance that is dedicated
to the additional element is manipulated, it may also be desirable to change their
relative sizes. US 6,366,025 issued April 2, 2002 to Yamada, describes an electro-luminescent
color display device having red, green, and blue light emitting elements having different
areas to take into consideration the differing emission efficiencies and luminance
ratios of the light emitting elements. The concept described by Yamada can be applied
to the display device of the present invention. Referring to Fig. 9, a display having
elements of varying areas depending on expected usage, efficiency and lifetime is
shown.
[0053] In a preferred embodiment, the invention is employed in a device that includes Organic
Light Emitting Diodes (OLEDs) which are composed of small molecule or polymeric OLEDs
as disclosed in but not limited to US 4,769,292, issued September 6, 1988 to Tang
et al., and US 5,061,569, issued October 29, 1991 to VanSlyke et al. Many combinations
and variations of organic light emitting displays can be used to fabricate such a
device.
[0054] The present invention can be employed in most OLED device configurations. These include
very simple structures comprising a single anode and cathode to more complex devices,
such as passive matrix displays comprised of orthogonal arrays of anodes and cathodes
to form pixels, and active-matrix displays where each pixel is controlled independently,
for example, with thin film transistors (TFTs).
[0055] There are numerous configurations of the organic layers wherein the present invention
can be successfully practiced. A typical structure is shown in Fig. 19 and is comprised
of a substrate
701, an anode
703, a hole-injecting layer
705, a hole-transporting layer
707, a light-emitting layer
709, an electron-transporting layer
711, and a cathode
713. These layers are described in detail below. Note that the substrate may alternatively
be located adjacent to the cathode, or the substrate may actually constitute the anode
or cathode. The organic layers between the anode and cathode are conveniently referred
to as the organic EL element. The total combined thickness of the organic layers is
preferably less than 500 nm.
[0056] The anode and cathode of the OLED are connected to a voltage/current source 850 through
electrical conductors
860. The OLED is operated by applying a potential between the anode and cathode such
that the anode is at a more positive potential than the cathode. Holes are injected
into the organic EL element from the anode and electrons are injected into the organic
EL element at the anode. Enhanced device stability can sometimes be achieved when
the OLED is operated in an AC mode where, for some time period in the cycle, the potential
bias is reversed and no current flows. An example of an AC-driven OLED is described
in US 5,552,678.
[0057] The OLED device of this invention is typically provided over a supporting substrate
where either the cathode or anode can be in contact with the substrate. The electrode
in contact with the substrate is conveniently referred to as the bottom electrode.
Conventionally, the bottom electrode is the anode, but this invention is not limited
to that configuration. The substrate can either be transmissive or opaque. In the
case wherein the substrate is transmissive, a reflective or light absorbing layer
is used to reflect the light through the cover or to absorb the light, thereby improving
the contrast of the display. Substrates can include, but are not limited to, glass,
plastic, semiconductor materials, silicon, ceramics, and circuit board materials.
Of course it is necessary to provide a light-transparent top electrode.
[0058] When EL emission is viewed through anode
703, the anode should be transparent or substantially transparent to the emission of
interest. Common transparent anode materials used in this invention are indium-tin
oxide (ITO), indium-zinc oxide (IZO) and tin oxide, but other metal oxides can work
including, but not limited to, aluminum- or indium-doped zinc oxide, magnesium-indium
oxide, and nickel-tungsten oxide. In addition to these oxides, metal nitrides, such
as gallium nitride, and metal selenides, such as zinc selenide, and metal sulfides,
such as zinc sulfide, can be used as the anode. For applications where EL emission
is viewed only through the cathode electrode, the transmissive characteristics of
anode are immaterial and any conductive material can be used, transparent, opaque
or reflective. Example conductors for this application include, but are not limited
to, gold, iridium, molybdenum, palladium, and platinum. Typical anode materials, transmissive
or otherwise, have a work function of 4.1 eV or greater. Desired anode materials are
commonly deposited by any suitable means such as evaporation, sputtering, chemical
vapor deposition, or electrochemical means. Anodes can be patterned using well-known
photolithographic processes. Optionally, anodes may be polished prior to application
of other layers to reduce surface roughness so as to minimize shorts or enhance reflectivity.
[0059] While not always necessary, it is often useful to provide a hole-injecting layer
705 between anode
703 and hole-transporting layer
707. The hole-injecting material can serve to improve the film formation property of
subsequent organic layers and to facilitate injection of holes into the hole-transporting
layer. Suitable materials for use in the hole-injecting layer include, but are not
limited to, porphyrinic compounds as described in US 4,720,432, plasma-deposited fluorocarbon
polymers as described in US 6,208,075, and some aromatic amines, for example, m-MTDATA
(4,4',4"-tris[(3-methylphenyl)phenylamino]triphenylamine). Alternative hole-injecting
materials reportedly useful in organic EL devices are described in EP 0 891 121 A1
and EP 1 029 909 A1.
[0060] The hole-transporting layer
707 contains at least one hole-transporting compound such as an aromatic tertiary amine,
where the latter is understood to be a compound containing at least one trivalent
nitrogen atom that is bonded only to carbon atoms, at least one of which is a member
of an aromatic ring. In one form the aromatic tertiary amine can be an arylamine,
such as a monoarylamine, diarylamine, triarylamine, or a polymeric arylamine. Exemplary
monomeric triarylamines are illustrated by Klupfel et al. US 3,180,730. Other suitable
triarylamines substituted with one or more vinyl radicals and/or comprising at least
one active hydrogen containing group are disclosed by Brantley et al US 3,567,450
and 3,658,520.
[0061] A more preferred class of aromatic tertiary amines are those which include at least
two aromatic tertiary amine moieties as described in US 4,720,432 and 5,061,569. The
hole-transporting layer can be formed of a single or a mixture of aromatic tertiary
amine compounds. Illustrative of useful aromatic tertiary amines are the following:
1,1-Bis(4-di-p-tolylaminophenyl)cyclohexane
1,1-Bis(4-di-p-tolylaminophenyl)-4-phenylcyclohexane
4,4'-Bis(diphenylamino)quadriphenyl
Bis(4-dimethylamino-2-methylphenyl)-phenylmethane
N,N,N-Tri(p-tolyl)amine
4-(di-p-tolylamino)-4'-[4(di-p-tolylamino)-styryl] stilbene
N,N,N',N'-Tetra-p-tolyl-4-4'-diaminobiphenyl
N,N,N',N'-Tetraphenyl-4,4'-diaminobiphenyl
N,N,N\N'-tetra-1-naphthyl-4,4'-diaminobiphenyl
N,N,N',N'-tetra-2-naphthyl-4,4'-diaminobiphenyl
N-Phenylcarbazole
4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(1-naphthyl)-N-(2-naphthyl)amino]biphenyl
4,4"-Bis[N-(1-naphthyl)-N-phenylamino]p-terphenyl
4,4'-Bis[N-(2-naphthyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(3-acenaphthenyl)-N-phenylamino]biphenyl
1,5-Bis[N-(1-naphthyl)-N-phenylamino]naphthalene
4,4'-Bis[N-(9-anthryl)-N-phenylamino]biphenyl
4,4"-Bis[N-(-anthryl)-N-phenylamino]-p-terphenyl
4,4'-Bis[N-(2-phenanthryl)-N-phenylamino]biphenyl
4,4'-Bis[N-(8-fluoranthenyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(2-pyrenyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(2-naphthacenyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(2-perylenyl)-N-phenylamino]biphenyl
4,4'-Bis[N-(1-coronenyl)-N-phenylamino]biphenyl
2,6-Bis(di-p-tolylamino)naphthalene
2,6-Bis[di-(1-naphthyl)amino]naphthalene
2,6-Bis[N-(1-naphthyl)-N-(2-naphthyl)amino]naphthalene
N,N,N',N'-Tetra(2-naphthyl)-4,4"-diamino-p-terphenyl
4,4'-Bis{N-phenyl-N-[4-(1-naphthyl)-phenyl]amino}biphenyl
4,4'-Bis[N-phenyl-N-(2-pyrenyl)amino]biphenyl
2,6-Bis[N,N-di(2-naphthyl)amine]fluorene
1,5-Bis[N-(1-naphthyl)-N-phenylamino]naphthalene
4,4',4"-tris[(3-methylphenyl)phenylamino]triphenylamine
[0062] Another class of useful hole-transporting materials includes polycyclic aromatic
compounds as described in EP 1 009 041. Tertiary aromatic amines with more than two
amine groups may be used including oligomeric materials. In addition, polymeric hole-transporting
materials can be used such as poly(N-vinylcarbazole) (PVK), polythiophenes, polypyrrole,
polyaniline, and copolymers such as poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate)
also called PEDOT/PSS.
[0063] As more fully described in US 4,769,292 and 5,935,721, the light-emitting layer (LEL)
709 of the organic EL element includes a luminescent or fluorescent material where electroluminescence
is produced as a result of electron-hole pair recombination in this region. The light-emitting
layer can be comprised of a single material, but more commonly consists of a host
material doped with a guest compound or compounds where light emission comes primarily
from the dopant and can be of any color. The host materials in the light-emitting
layer can be an electron-transporting material, as defined below, a hole-transporting
material, as defined above, or another material or combination of materials that support
hole-electron recombination. The dopant is usually chosen from highly fluorescent
dyes, but phosphorescent compounds, e.g., transition metal complexes as described
in WO 98/55561, WO 00/18851, WO 00/57676, and WO 00/70655 are also useful. Dopants
are typically coated as 0.01 to 10 % by weight into the host material. Polymeric materials
such as polyfluorenes and polyvinylarylenes (e.g., poly(p-phenylenevinylene), PPV)
can also be used as the host material. In this case, small molecule dopants can be
molecularly dispersed into the polymeric host, or the dopant could be added by copolymerizing
a minor constituent into the host polymer.
[0064] An important relationship for choosing a dye as a dopant is a comparison of the bandgap
potential which is defined as the energy difference between the highest occupied molecular
orbital and the lowest unoccupied molecular orbital of the molecule. For efficient
energy transfer from the host to the dopant molecule, a necessary condition is that
the band gap of the dopant is smaller than that of the host material. For phosphorescent
emitters it is also important that the host triplet energy level of the host be high
enough to enable energy transfer from host to dopant.
[0065] Host and emitting molecules known to be of use include, but are not limited to, those
disclosed in US 4,768,292; 5,141,671; 5,150,006; 5,151,629; 5,405,709; 5,484,922;
5,593,788; 5,645,948; 5,683,823; 5,755,999; 5,928,802; 5,935,720; 5,935,721; and 6,020,078.
[0066] Metal complexes of 8-hydroxyquinoline (oxine) and similar derivatives constitute
one class of useful host compounds capable of supporting electroluminescence. Illustrative
of useful chelated oxinoid compounds are the following:
CO-1: Aluminum trisoxine [alias, tris(8-quinolinolato)aluminum(III)]
CO-2: Magnesium bisoxine [alias, bis(8-quinolinolato)magnesium(II)]
CO-3: Bis[benzo {f}-8-quinolinolato]zinc (II)
CO-4: Bis(2-methyl-8-quinolinolato)aluminum(III)-□-oxo-bis(2-methyl-8-quinolinolato)
aluminum(III)
CO-5: Indium trisoxine [alias, tris(8-quinolinolato)indium]
CO-6: Aluminum tris(5-methyloxine) [alias, tris(5-methyl-8-quinolinolato) aluminum(III)]
CO-7: Lithium oxine [alias, (8-quinolinolato)lithium(I)]
CO-8: Gallium oxine [alias, tris(8-quinolinolato)gallium(III)]
CO-9: Zirconium oxine [alias, tetra(8-quinolinolato)zirconium(IV))
[0067] Other classes of useful host materials include, but are not limited to: derivatives
of anthracene, such as 9,10-di-(2-naphthyl)anthracene and derivatives thereof as described
in US 5,935,721, distyrylarylene derivatives as described in US 5,121,029, and benzazole
derivatives, for example, 2, 2', 2"-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole].
Carbazole derivatives are particularly useful hosts for phosphorescent emitters.
[0068] Useful fluorescent dopants include, but are not limited to, derivatives of anthracene,
tetracene, xanthene, perylene, rubrene, coumarin, rhodamine, and quinacridone, dicyanomethylenepyran
compounds, thiopyran compounds, polymethine compounds, pyrilium and thiapyrilium compounds,
fluorene derivatives, periflanthene derivatives, indenoperylene derivatives, bis(azinyl)amine
boron compounds, bis(azinyl)methane compounds, and carbostyryl compounds.
[0069] Preferred thin film-forming materials for use in forming the electron-transporting
layer
711 of the organic EL elements of this invention are metal chelated oxinoid compounds,
including chelates of oxine itself (also commonly referred to as 8-quinolinol or 8-hydroxyquinoline).
Such compounds help to inject and transport electrons, exhibit high levels of performance,
and are readily fabricated in the form of thin films. Exemplary oxinoid compounds
were listed previously.
[0070] Other electron-transporting materials include various butadiene derivatives as disclosed
in US 4,356,429 and various heterocyclic optical brighteners as described in US 4,539,507.
Benzazoles and triazines are also useful electron-transporting materials.
[0071] When light emission is viewed solely through the anode, the cathode 113 used in this
invention can be comprised of nearly any conductive material. Desirable materials
have good film-forming properties to ensure good contact with the underlying organic
layer, promote electron injection at low voltage, and have good stability. Useful
cathode materials often contain a low work function metal (< 4.0 eV) or metal alloy.
One preferred cathode material is comprised of a Mg:Ag alloy wherein the percentage
of silver is in the range of 1 to 20 %, as described in US 4,885,221. Another suitable
class of cathode materials includes bilayers comprising a thin electron-injection
layer (EIL) in contact with the organic layer (e.g., ETL) which is capped with a thicker
layer of a conductive metal. Here, the EIL preferably includes a low work function
metal or metal salt, and if so, the thicker capping layer does not need to have a
low work function. One such cathode is comprised of a thin layer of LiF followed by
a thicker layer of A1 as described in US 5,677,572. Other useful cathode material
sets include, but are not limited to, those disclosed in US 5,059,861, 5,059,862,
and 6,140,763.
[0072] When light emission is viewed through the cathode, the cathode must be transparent
or nearly transparent. For such applications, metals must be thin or one must use
transparent conductive oxides, or a combination of these materials. Optically transparent
cathodes have been described in more detail in US 4,885,211, US 5,247,190, JP 3,234,963,
US 5,703,436, US 5,608,287, US 5,837,391, US 5,677,572, US 5,776,622, US 5,776,623,
US 5,714,838, US 5,969,474, US 5,739,545, US 5,981,306, US 6,137,223, US 6,140,763,
US 6,172,459, EP 1 076 368, US 6,278,236, and US 6,284,393. Cathode materials are
typically deposited by evaporation, sputtering, or chemical vapor deposition. When
needed, patterning can be achieved through many well known methods including, but
not limited to, through-mask deposition, integral shadow masking, for example, as
described in US 5,276,380 and EP 0 732 868, laser ablation, and selective chemical
vapor deposition.
[0073] In some instances, layers
709 and
711 can optionally be collapsed into a single layer that serves the function of supporting
both light emission and electron transportation. It also known in the art that emitting
dopants may be added to the hole-transporting layer, which may serve as a host. Multiple
dopants may be added to one or more layers in order to create a white-emitting OLED,
for example, by combining blue- and yellow-emitting materials, cyan- and red-emitting
materials, or red-, green-, and blue-emitting materials. White-emitting devices are
described, for example, in EP 1 187 235, US 20020025419, EP 1 182 244, US 5,683,823,
US 5,503,910, US 5,405,709, and US 5,283,182.
[0074] Additional layers such as electron or hole-blocking layers as taught in the art may
be employed in devices of this invention. Hole-blocking layers are commonly used to
improve efficiency of phosphorescent emitter devices, for example, as in US 20020015859.
[0075] This invention may be used in so-called stacked device architecture, for example,
as taught in US 5,703,436 and US 6,337,492.
[0076] The organic materials mentioned above are suitably deposited through a vapor-phase
method such as sublimation, but can be deposited from a fluid, for example, from a
solvent with an optional binder to improve film formation. If the material is a polymer,
solvent deposition is useful but other methods can be used, such as sputtering or
thermal transfer from a donor sheet. The material to be deposited by sublimation can
be vaporized from a sublimator "boat" often comprised of a tantalum material, e.g.,
as described in US 6,237,529, or can be first coated onto a donor sheet and then sublimed
in closer proximity to the substrate. Layers with a mixture of materials can utilize
separate sublimator boats or the materials can be pre-mixed and coated from a single
boat or donor sheet. Patterned deposition can be achieved using shadow masks, integral
shadow masks (US 5,294,870), spatially-defined thermal dye transfer from a donor sheet
(US 5,688,551, 5,851,709 and 6,066,357) and inkjet method (US 6,066,357).
[0077] Most OLED devices are sensitive to moisture or oxygen, or both, so they are commonly
sealed in an inert atmosphere such as nitrogen or argon, along with a desiccant such
as alumina, bauxite, calcium sulfate, clays, silica gel, zeolites, alkaline metal
oxides, alkaline earth metal oxides, sulfates, or metal halides and perchlorates.
Methods for encapsulation and desiccation include, but are not limited to, those described
in US 6,226,890. In addition, barrier layers such as SiOx, Teflon, and alternating
inorganic/polymeric layers are known in the art for encapsulation.
[0078] OLED devices of this invention can employ various well-known optical effects in order
to enhance its properties if desired. This includes optimizing layer thicknesses to
yield maximum light transmission, providing dielectric mirror structures, replacing
reflective electrodes with light-absorbing electrodes, providing anti glare or anti-reflection
coatings over the display, providing a polarizing medium over the display, or providing
colored, neutral density, or color conversion filters over the display. Filters, polarizers,
and anti-glare or anti-reflection coatings may be specifically provided over the cover
or an electrode protection layer beneath the cover.