(19)
(11) EP 1 475 456 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION

(48) Corrigendum issued on:
23.02.2005 Bulletin 2005/08

(43) Date of publication:
10.11.2004 Bulletin 2004/46

(21) Application number: 04017495.5

(22) Date of filing: 28.10.2002
(51) International Patent Classification (IPC)7: C23C 14/00, C23C 14/02, C23C 14/06, C23C 14/16, C23C 28/02, H01L 21/768
(84) Designated Contracting States:
DE FR GB

(30) Priority: 14.11.2001 JP 2001348325
05.02.2002 JP 2002027738
21.02.2002 JP 2002044289
21.02.2002 JP 2002044296

(62) Application number of the earlier application in accordance with Art. 76 EPC:
02024416.6 / 1312696

(71) Applicant: Mitsubishi Heavy Industries, Ltd.
Tokyo (JP)

(72) Inventors:
  • Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd.
    Kanazawa-ku, Yokohama-shi, Kanagawa (JP)
  • Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd.
    Shinhama 2-chome Takasago-shi, Hyogo (JP)
  • Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd.
    Shinhama 2chome, Takasago-shi, Hyogo (JP)
  • Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd.
    Kanazawa-ku, Yokohama-shi, Kanagawa (JP)
  • Nishimori, Toshihiko,c/o Mitsubishi Heavy Ind.Ltd.
    Shinhama 2-chome, Takasago-shi, Hyogo (JP)

(74) Representative: HOFFMANN - EITLE 
Patent- und Rechtsanwälte Arabellastrasse 4
81925 München
81925 München (DE)

 
Remarks:
This application was filed on 23.07.2004 as a divisional application to the application mentioned under INID code 62.
 


(54) Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus


(57) A barrier metal film production apparatus, comprising: a chamber accommodating a substrate; a metallic etched member provided in the chamber at a position opposed to the substrate; source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; nitrogen-containing gas supply means for supplying a nitrogen-containing gas to an interior of the chamber between the substrate and the etched member; plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate.