| (19) |
 |
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(11) |
EP 1 475 457 A8 |
| (12) |
CORRECTED EUROPEAN PATENT APPLICATION |
| (48) |
Corrigendum issued on: |
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23.02.2005 Bulletin 2005/08 |
| (43) |
Date of publication: |
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10.11.2004 Bulletin 2004/46 |
| (22) |
Date of filing: 28.10.2002 |
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| (84) |
Designated Contracting States: |
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DE FR GB |
| (30) |
Priority: |
14.11.2001 JP 2001348325
05.02.2002 JP 2002027738
21.02.2002 JP 2002044289
21.02.2002 JP 2002044296
|
| (62) |
Application number of the earlier application in accordance with Art. 76 EPC: |
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02024416.6 / 1312696 |
| (71) |
Applicant: Mitsubishi Heavy Industries, Ltd. |
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Tokyo (JP) |
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| (72) |
Inventors: |
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- Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd.
Kanagawa (JP)
- Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd.
Hyogo (JP)
- Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd.
Hyogo (JP)
- Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd.
Kanagawa (JP)
- Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
Hyogo (JP)
|
| (74) |
Representative: HOFFMANN - EITLE |
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Patent- und Rechtsanwälte Arabellastrasse 4
81925 München
81925 München (DE) |
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Remarks: |
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This application was filed on 23 - 07 - 2004 as a divisional application to the application
mentioned under INID code 62. |
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| (54) |
Metal barrier film production apparatus, metal barrier film production method, metal
film production method, and metal film production apparatus |
(57) A barrier metal film production method comprising: supplying a source gas containing
a halogen to an interior of a chamber between a substrate and a metallic etched member;
converting an atmosphere within the chamber into a plasma to generate a source gas
plasma so that the etched member is etched with the source gas plasma to form a precursor
from a metal component contained in the etched member and the source gas; exciting
a nitrogen-containing gas in a manner isolated from the chamber accommodating the
substrate; forming a metal nitride upon reaction between excited nitrogen and the
precursor; and making a temperature of the substrate lower than a temperature of means
for formation of the metal nitride to form the metal nitride as a film on the substrate.