METHOD FOR FORMING AN IMPROVED METAL SILICIDE CONTACT TO A SILICON-CONTAINING CONDUCTIVE REGION - Patent 1490901

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EP 1 490 901 A1

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(43)	Date of publication:
	29.12.2004 Bulletin 2004/53

(21)	Application number: 02787066.6

(22)	Date of filing: 20.12.2002

(51)	International Patent Classification (IPC)⁷: H01L 21/768

(86)	International application number:
	PCT/US2002/040806

(87)	International publication number:
	WO 2003/083936 (09.10.2003 Gazette 2003/41)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
	Designated Extension States:
	AL LT LV MK RO

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Priority:

28.03.2002 DE 10214065
29.10.2002 US 282665

(71)	Applicant: ADVANCED MICRO DEVICES INC.
	Sunnyvale,California 94088-3453 (US)

(72)	Inventors:
	WIECZOREK, Karsten 01109 Dresden (DE) KAHLERT, Volker 01217 Dresden (DE) HORSTMANN, Manfred 01099 Dresden (DE)

(74)	Representative: Grünecker, Kinkeldey, Stockmair & SchwanhäusserAnwaltssozietät
	Maximilianstrasse 58 80538 München 80538 München (DE)

(54)	METHOD FOR FORMING AN IMPROVED METAL SILICIDE CONTACT TO A SILICON-CONTAINING CONDUCTIVE REGION