[0001] The present invention relates to dissolution inhibitors in photoresist compositions
comprising a polymeric binder, a dissolution inhibitor and a photo active compound,
suitable for use with lasers predominantely generating radiation with a wavelength
of between 10-165 nm, in particular of 157 nm.
[0002] Such photoresist compositions are described in J. Photopol. Sc. & Techn.
15 (2002), pages 613-618. More in particular, said journal article describes the use
of fluorinated norbornene type of polymers and a number of dissolution inhibitors
having an aliphatic, or aromatic ring structure. Said article is describing compositions
for use in photoresist technology working with a wavelength of 157 nm (currently obtained
with a fluorine excimer laser). Photoresist technology at this wavelength is requiring
new materials and compositions that are transparent at that wavelength, that are highly
sensitive to the radiation and in the further development step, sensitive to the developer
solution, and yet at the undeveloped areas, a good etch resistance. The next step
in lower wavelength will be extreme UV (13 nm).
[0003] The currently known materials are not meeting all the requirements and research is
ongoing to find better polymeric binders, dissolution inhibitors or other additives
giving improved results and improved photo active compounds, suitable for use at the
wavelength below 165 nm.
[0004] It is one object of the present invention to provide an improved dissolution inhibitor.
[0005] It is a further object of the present invention to provide a photoresist composition
suitable for use at 157 nm having improved properties.
[0006] One or more of the above objects are achieved by a photoresist composition suitable
for use at 10-165 nm comprising:
(a) a polymeric binder
(b) a photoactive compound
(c) a dissolution inhibitor, the dissolution inhibitor comprising at least
(i) two aromatic groups,
(ii) fluorine and
(iii) a (blocked) acid group which when unblocked has a pKa < 12.
[0007] Unexpectedly, the dissolution inhibitor as defined under (c) had better performance
in etch resistance and/or resistance against swelling in developer solutionthan the
dissolution inhibitors described in the prior art.
[0008] Part of the dissolution inhibitors found are novel compounds, and are represented
by formula 1.

in which n = 1-4
at least one of R
1 through R
10 independently comprise a (blocked) acid group, the acid group when unblocked has
a pKa < 12. Preferably, the at least one R
1-R
10 independently comprise hydroxy, C(CF
3)
2OH, or an acid labile group, more preferebly the acid labile group is represented
by any of formula's (2)-(5);

the other R
1 through R
10 represent independently hydrogen, fluorine or hydrocarbonaceous substituents;
R
11 is an aliphatic fluorinated group preferably having 2-10 carbon atoms and 2-20 fluorine
atoms;
R
12 represents hydrogen or an aliphatic group having 1-10 carbon atoms and 0-13 fluorine
atoms, and R
11 and R
12 are not both CF
3.
[0009] In formula 1:
One of R1-R3 and R9-R10 and one of R4-R8, independently, are preferably hydroxy, C(CF3)2OH or an acid labile group;
the other R1 through R10, independently, preferably are hydrogen.
R11 preferably is a fluorinated C2-C10 group with 2-20 fluor atoms, more preferably linear group.
R12 preferably is hydrogen.
[0010] In the photoresist composition of the present invention, the polymeric binder (a)
generally is a low molecular weight polymer. Hence, it is sometimes called an oligomer.
The polymeric binder can be any suitable binder which is transparent at 10-165 nm,
in particular 13 or 157 nm. The binder preferably has an absorption at the used wavelength
lower 5 µm
-1, more preferably lower than 4 µm
-1, more preferably 3 µm
-1, even more preferably 2 µm
-1, and even more preferably below 1 µm
-1. Nowadays commonly investigated are fluorinated norbornene type of polymers and siloxane
based polymers for 157 nm.
[0011] Such an oligomer preferably has a number average molecular weight of about 5000 or
less. As is well known to those skilled in the art, certain ethylenically unsaturated
compounds (monomers) undergo free radical polymerization or metal-catalyzed addition
polymerization to form polymers having repeat unit(s) derived from the ethylenically
unsaturated compounds. By suitable adjustments in polymerization conditions and especially
by employing a chain transfer agent or chain terminating agent in the synthesis, the
molecular weight of the product may be controlled to the desired range.
[0012] The polymer comprises acid groups (with a pKa < 12), which are preferably partially
blocked with acid-labile groups. Generally 5-90% of the acid groups is blocked, preferably
6-50% and most preferably 6-30%, with the percentage of blocking it is possible to
optimise the sensitivity of the polymer for UV light.
[0013] Suitable polymers are fluorinated hydrocarbon polymers. Preferably the hydrocarbon
polymers comprises ring structures such as for example tetrahydrofurane of norbornane.
Examples of suitable polymers comprise polynorbornene hexafluoralcohol, or a polymer
developped by Asahi with the structure

in which R is H or t-boc (the polymer contains both hydroxy and blocked hydroxy groups).
Photoactive Compound (PAC)
[0014] The photoresist composition contains a combination of binder (a) and photoactive
compound (b).
[0015] If the polymer of the binder itself is photoactive, a separate photoactive component
is not required. It is contemplated that the photoactive component may be chemically
bonded to the polymer of the binder. A system in which the polymeric binder itself
is photochemically active is described in EP-A-473547. Therein a photoresist comprises
an olefinically unsaturated sulfonium or iodonium salt (the photochemically active
component) copolymerized with an olefinically unsaturated comonomer containing an
acid sensitive group yielding a radiationsensitive copolymer that would be an effective
photoactive polymeric binder.
[0016] When the compositions of this invention contain a separate photoactive component
(PAC) the binder itself is usually not photoactive.
[0017] The photoactive component (PAC) usually is a compound that produces either acid or
base upon exporsure to actinic radiation. If an acid is produced upon exposure to
actinic radiation, the PAC is termed a photoacid generator (PAG). If a base is produced
upon exposure to actinic radiation, the PAC is termed a photobase generator (PBG).
[0018] Suitable photoacid generators for this invention include, but are not limited to,
1) sulphonium salts (formula 6), 2) iodonium salts (formula 7), and 3) hydroxamic
acid esters, such formula 8.

[0019] In formulas 6 and 7, R
1-R
3 are independently substituted or unsubstituted aryl or substituted or unsubstituted
C
1-C
20 alkylaryl (aralkyl). Representative aryl groups include, but are not limited to,
phenyl and naphthyl. Suitable substituents include, but are not limited to, hydroxyl
(-OH) and C
1-C
20 alkyloxy (e.g., C
10H
21O). The anion X
- in formulas 6 and 7 can be, but is not limited to, SbF
6- (hexafluoroantimonate), CF
3SO
3-
(trifluoromethylsulfonate = triflate), and C
4F
9SO
3- (perfluorobutylsulfonate).
Dissolution Inhibitor
[0020] The dissolution inhibitors of this invention may satisfy multiple functional needs
including dissolution inhibition, plasma etch esistance, plasticising and adhesion
behavior of resist compositions.
[0021] The dissolution inhibitors (c) of the present invention comprise at least
(i) two aromatic groups
(ii) at least one fluorine atom, and
(iii) a (blocked) acid group which when unblocked has a pKa < 12.
[0022] Preferably, the dissolution inhibitor of the present invention comprises 2 to 5 aromatic
groups, more preferably two or four aromatic groups as these are readily available.
[0023] The aromatic groups may be 5 or 6 membered rings, preferably 6 membered rings. Generally,
these rings are fully hydrocarbon rings but they may contain oxygen or nitrogen, in
particular oxygen as ether groups.
[0024] The dissolution inhibitor contains at least one fluorine atom, preferably 2 or more.
The dissolution inhibitor preferably contains a fluorine at or near the aromatic ring
structure.
[0025] Preferably, the acid group is an hydroxy group attached to the aromatic group or
a tertiary OH group as in C[CF
3CF
3]OH. Preferably, the dissolution inhibitor comprises two or more acid groups. Generally,
the dissolution inhibitor will have 5 acid groups or less.
[0026] The pKa of the acid group is about 12 or less, preferably about 10 or less, most
preferred 9.6 or less. Generally, the pKa is about 2, or higher.
[0027] The acid groups preferably are partly or fully blocked with an acid-labile group.
Preferably, at least 2 acid groups are blocked for 90% or more.
[0028] A acid labile protecting group may be selected such that when a photoacid is produced
upon imagewise exposure, the acid will catalyze deprotection and production of hydrophilic
acid groups that are necessary for development under aqueous conditions. Acid labile
R groups include, but are not limited to A) a carbonate formed from a tertiary aliphatic
alcohol, B) a tertiary aliphatic or other group which forms a stabilized carbocation,
C) an acetal group and D) an orthoester group. Generally, groups A, B , C or D contain
3 to about 25 carbon atoms.
[0029] Some specific examples in category A are t-butyl, 2-methyl-2-adamantyl, and isobornyl
carbonates.
[0030] Some specific examples in category B are t-butyl, 2-methyl-2-adamantyl, cyclopropylcarbinyl,
2-propenyl, and 2-trimethylsilylethyl.
[0031] Some specific examples in category C are 2-tetrahydropyranyl, 2-tetrahydrofuranyl,
and alpha-alkoxyalkyl such as methoxymethyl and ethoxymethyl.
[0032] Some specific examples in category D are timethylorthoformate, triethylorthoformate,
tripropylorthoformate, trimethylorthoacetate, triethylorthoacetate, tripropylorthoacetate.
[0033] Particularly preferred dissolution inhibitors are derivatives from bisphenol. Bisphenol
has the general structure of formula 9

in which R' and R" are independently H or alkylgroups. Generally, the alcohol groups
are in the para-position with respect to the bridging carbon atom. The sulphoxide
analogue is also suitable in the present invention.
[0034] Preferably, the aromatic groups have hydrogen or fluorine atoms apart from the hydroxy
and the bridging group.
[0035] The bridging group preferably is a fluorine substituted alkylene group such as for
example bridging groups wherein R' or R" or both can be represented by a (CX
2)
n-Y group in which Y = H or F and wherein n= 0-20, or by a (CX
2)
n-(O-(CX
2)
n-)
mY group in which Y = H or F and wherein n= 0-20 and m = 0-10.
[0036] Suitable bridging groups are for example:
(a) C H (CF2)n C F3 in which n = 0-10
(b) C H (CF2)n CF2H in which n = 0-10
(c) C {(CF2)nCF3} {(CF2)m CF3} in which n and m are independently 0-6?
(d) CH-CF2-(OCF-CF2)-F (in which n = 0-4)
[0037] Bridging groups with 4-16 fluor atoms are most preferred.
[0038] The photoresist composition generally will contain:
(a) about 50 to about 99.5 wt% polymeric binder
(b) about 0 to about 10 wt% photoactive compound
(c) about 0.5 to about 50 wt% dissolution inhibitor relative to the total of (a) +
(b) + (c).
[0039] The photoresist composition preferably contains less than about 99 wt% polymeric
binder, more preferably less than about 95 wt%.
[0040] The photoresist composition preferably contains about 1-5 wt% of photoactive compound.
[0041] The photoresist compostion preferably contains about 1 wt% or more of dissolution
inhibitor, more preferably about 5% or more. Generally, the amount of dissolution
inhibitor will be about 50 wt% or less, more preferably about 20 wt% or less.
[0042] The photoresist composition of the present invention preferably has at 157 nm an
absorption coefficient of less than about 3 µm
-1. More preferably below 2 µm
-1, and even more preferably below 1 µm
-1.
[0043] The dissolution inhibitor of the present invention, when used at 10 wt% in a polymeric
binder preferably adds about 0.8 µm
-1 or less to the absorbance coefficient of the photoresist composition, more preferably
less than about 0.6 µm
-1.
[0044] A dissolution inhibiting amount of the dissolution inhibitor is combined with the
binder, solvent and any photoresist additives. Examples of a suitable solvent are
2-heptanone or PGMEA (propylene glycol methyl ether acetate).
Other components
[0045] The compositions of this invention can contain optional additional components. Examples
of additional components which can be added include, but are not limited to, resolution
enhancers, adhesion promoters, residue reducers, coating aids, plasticizers, and Tg
(glass transition temperature) modifiers. Crosslinking agents may also be present
in negative-working resist compositions. Some typical crosslinking agents include
bis-azides, such as 4,4'-diazidodipheyl sulphide and 3,3'-diazidodiphenyl sulfone.
Typically, a negative working composition containing at least one crosslinking agent
also contains suitable functionality (e.g., unsaturated C = C bonds) that can react
with the reactive species (e.g., nitrenes) that are generated upon exposure to UV
to produce crosslinked polymers that are not soluble, dispersed, or substantially
swollen in developer solution.
Process for forming an etched layer in a chip
[0046] The process for forming an etched layer in a chip comprises, in order:
(A) forming a photoresist layer on a substrate
wherein the photoresist layer is prepared from a photoresist composition comprising:
(a) a binder;
(b) a photoactive component; and
(c) the at least one dissolution inhibitor, the dissolution inhibitor comprising at
least (i) two aromatic groups (ii) fluorine, and (iii) a (blocked) acid group which
when unblocked has a pKa < 12.
(B) imagewise exposing a photoresist layer to form imaged and non-imaged areas
(C) developing the exposed photoresist layer having imaged and non-imaged areas to
form the relief image on the substrate
(D) etching the substrate to predetermined depth
(E) removing the relief image on the substrate
[0047] The photoresist layer is prepared by applying a photoresist composition onto a substrate
and drying to remove the solvent. The so formed photoresist layer is sensitive in
the ultraviolet region of the electromagnetic spectrum and especially to different
UV wavelengths including, 10-165 nm, in particular 13 or 157 nm. Imagewise exposure
is for example done with ultraviolet light of 157 nm. Imagewise exposure can either
be done digitally with a laser or equivalent device or non-digitally with use of a
photomask? Digital imaging with a laser is preferred. Suitable laser devices for digital
imaging of the compositions of this invention include, but are not limited to, a fluorine
(F
2) laser with output at 157 nm. Since, as discussed supra, use of UV light of lower
wavelength for imagewise exposure corresponds to higher resolution (lower resolution
limit), the use of a lower wavelength 157 m is generally preferred over use of a higher
wavelength (e.g., 248 nm or higher).
[0048] The photoresist compositions of this invention must contain sufficient functionality
for development following imagewise exposure to UV light. Preferably, the functionality
is an acid or protected acid such that aqueous development is possible using a basic
developer such as sodium hydroxide solution, potassium hydroxide solution, or ammonium
hydroxide solution.
[0049] When an aqueous processable photoresist is coated or otherwise applied to a substrate
and imagewise exposed to UV light, development of the photoresist compsition may require
that the binder material or dissolution inhibitor should contain sufficient acid groups
and/or protected acid groups that are at least partially deprotected upon exposure
to render the photoresist (or other photoimageable coating composition) processable
in aqueous alkaline developer. In case of a positive-working photoresist layer, the
photoresist layer will be removed during development in portions which are exposed
to UV radiation but will be substantially unaffected in unexposed portions during
development by aqueous alkaline liquids such as wholly aqueous solutions containing
0.262 N tetramethylammonium hydroxide (with development at 25°C usually for less than
or equal to 120 seconds). In case of a negative-working photoresist layer, the photoresist
layer will be removed during development in portions which are unexposed to UV radiation
but will be substantially unaffected in exposed portions during development using
either a critical fluid or an organic solvent.
[0050] A critical fluid, as used herein, is one or more substanced heated to a temperature
near or above its critical temperature and compressed to a pressure near or above
its critical pressure. Critical fluids in this invention are at least at a temperature
that is higher than 15°C below the critical temperature of the fluid and are at least
at a pressure higher than 5 atmosphers below the critical pressure of the fluid. Carbon
dioxide may be used for the critical fluid in the present invention. Various organic
solvents can also be used as developer in this invention. These include, but are not
limited to, halogenated solvents and non-halogenated solvents. Halogenated solvents
are typical and fluorinated solvents are more typical.
[0051] Etching of the substrate is performed by generally known means. Depending on the
substrate, different etching substances may be used, as described in Soane, D.S.,
Martynenko, Z. "Polymers in Microelectronics: Fundamentals and Applications", Elsevier,
Amsterdam, 1989.
[0052] Stripping the residual relief image is generally performed by using methods described
in the above mentioned Soane reference.
[0053] In the process of forming patterned microelectronic structures by means of lithography,
it is common in the art to use at least one antireflective layer either beneath the
photoresist layer, a BARC, or on top of the photoresist layer, a TARC, (or sometimes
referred to simply as an ARC) or both. Antireflective coating layers have been shown
to reduce the deleterious effects of film thickness variations, and the resulting
standing waves caused by the interference of light reflecting form various interfaces
within the photoresist structure, and the variations in the exposure dose in the photoresist
layer due to loss of the reflected light. The use of an antireflective layer results
in improved patterning and resolution characteristics of the photoresist materials
because it suppresses reflection related effects.
[0054] With the photoresists of the present invention it is possible to achieve a minimum
feature size of 60 nm (1:1) at 140 nm thickness with a 157 nm laser. At 200 nm thickness
a minimum feature size of 80 nm (1:1) was achieved. Without the dissolution inhibitor,
it was impossible to get any suitable results with the same binder. Depending on the
optics used, the feature size can be optimised.
[0055] The photoresist preferably has a critical energy amount (the point where the exposed
area gets soluble) less than 10 mJ/cm
2, preferably less than 8 mJ/cm
2.
[0056] The thickness of the resist layer preferably is 100-400 nm, more preferably 150-300,
and even more preferred 160-250 nm.
Substrate
[0057] The substrate employed in this invention can be any material used in semiconductor
manufacture, for example, silicon, silicon oxide, silicon nitride and the like.
Other applications
[0058] The composition of the present invention can also be used as antireflective coatings.
[0059] Such antireflective layers may be applied using many different techniques such as
spin coating, chemical vapor deposition and aerosol deposition. The formulation of
antireflective compositions is well known to those skilled in the art. The primary
optical properties of the composition being used for the antireflective layer to be
considered are the optical absorption and the index of refraction.
[0060] The invention will be elucidated by the following non-binding examples.
EXAMPLES
Synthesis of various dissolution inhibitors. Chemical structures 10-15 represent the various Dls prepared in this study.
[0062] The syntheric procedure for the preparation of DI according to formulas (10) is given
below:
bis-(tert-butyl) carbonate of 4,4'(hexafluoroisopropylidine)diphenol (10)
[0063] In acetonitrile (1.2 L) was dissolved 4,4'(hexafluorisopropylidine)diphenol (1) (24
g, 71.4 mmol) and di-
tert-butyl dicarbonate (37 g, 171.4 mmol). To the clear solution was added DMAP (1.7 g,
14.3 mmol). After stirring for 3h at RT the reaction mixture was diluted with EtOAc
(3 L) and washed with 5% HCl (aq) (300 mL). The organic layer was separated, dried
with Na
2SO
4 and concentrated to a white/yellow solid which was recrystallized from MeOH. Compound
(
10) (31.3 g, 82 %) was obtained as a white solid.

[0064] Other dissolution inhibitords (11)-(15) were obtained in an analogous manner.
Preparation of various compositions. Different formulations were prepared using polynorbornenehexafluoroalcohol (PNBHFA)
as the base polymer (see formula 16).
[0065] This polymer is prepared according to the procedure given by Tran et al. Macromolecules
2002
35 pp 6539-6549.

[0066] All the formulations were prepared using propylene glycol methyl ether acetate (PGMEA)
as the solvent. A typical formulation consisted of the polymer with 5 wt % (relative
to polymer) of photoacid generator (PAG), i.e. triphenylsulfonium nonaflate, and 0.3
wt % of base, i.e. tetrabuthylammonium hydroxide (TBAH), and appropriate amount of
DI. Tables 1 and 2 show the composition of all the formulations.
Table 1.
Composition of formulations. |
Formulationa |
DI (wt %) |
PAGb |
Basec |
A157 nm(µm-1) |
E0 (mJ/cm2) |
1† |
- |
- |
- |
1.7 |
- |
2 |
10 % DI (10) |
5 |
0.3 |
2.3 |
5.9 |
3 |
15 % DI (10) |
5 |
0.3 |
2.5 |
5.3 |
4 |
10 % DI (11) |
- |
- |
2.0 |
- |
5 |
10 % DI (11) |
5 |
0.3 |
2.4 |
5.6 |
6 |
15 % DI (11) |
5 |
0.3 |
2.4 |
6.8 |
a) All the formulations are based on PNBHFA as the platform polymer. |
b) Weight percentage of PAG, i.e. triphenylsulfonium nonaflate, relative to polymer
+ DI |
c) Weight percentage of base, i.e. tetrabuthylammonium hydroxide (TBAH), relative
to polymer + DI |
Table 2.
Formulationa |
DI (wt %) |
PAGb |
A157 nm(µm-1) |
E0 (mJ/cm2) |
Dark loss (Å) |
7 |
10% (10) |
5 |
1.97 |
2.1 |
186 |
8 |
10% (11) |
5 |
1,95/7 |
5.0/3.9 |
115/108 |
9 |
10% (12) |
5 |
2.08 |
2.9 |
193 |
10 |
10% (13) |
5 |
2.02 |
2.9 |
176 |
11 |
10% (14) |
5 |
1.90 |
7.8 |
96 |
12 |
10% (15) |
5 |
1.92 |
6.7 |
92 |
a) All the formulations are based on PNBHFA as the platform polymer and 0.3 wt% Base
relative to polymer + D1 |
b) Weight percentage of PAG, i.e. triphenylsulfonium nonaflate, relative to polymer
+ DI |
[0067] The results show that the absorbance at 157 nm is low, and that the dissolution inhibitor
adds 0.2-0.8 µm
-1 absorbance at 10-15%. The critical energy (Eo) is a measure for the energy needed
to make the composition soluble in the developper solution. The dark loss is the loss
in Å of the composition by the developper solution. The figures show the imaging results
of formulations 3, 5 and 6.
[0068] Further, the oxide etch resistance with a C
4F
8 recipe was tested of formulations 7 and 8, in comparison with a reference p-hydroxy
styrene commercial system, and in comparison with 15% of compound 6 of the Conley
et al. reference mentioned in the introduction; this is an aliphatic dissolution inhibitor.
The relative etch results of the compounds of the invention showed a 6-7% inprovement
over the commercial standard, and a 3% improvement over the aliphatic dissolution
inhibitor, while using only 10% of aromatic dissolution inhibitor in stead of the
15% aliphatic dissolution inhibitor.
1. Photoresist composition suitable for use at 10-165 nm comprising:
(a) a polymeric binder
(b) a photoactive compound
(c) a dissolution inhibitor, the dissolution inhibitor comprising at least
(i) two aromatic groups,
(ii) fluorine and
(iii) a blocked acid group which when unblocked has a pKa < 12.
2. Photoresist composition according to claim 1 wherein the photoresist composition generally
will contain:
(a) about 50 to about 99.5 wt% polymeric binder
(b) about 0 to about 10 wt% photoactive compound
(c) about 0.5 to about 50 wt% dissolution inhibitor relative to the total (a) + (b)
+ (c).
3. Photoresist composition according to any one of claims 1-2 wherein the composition
has an absorption coefficient of less than about 3 µm-1
4. Photoresist composition according to any one of claims 1-3 wherein the dissolution
inhibitor, when used at 10 wt% in a polymeric binder adds about 0.8 µm-1 or less to the absorbance coefficient of the composition.
5. Photoresist composition according to any one of claims 1-4 wherein the dissolution
inhibitor has 2-5 aromatic atoms.
6. Photoresist according to any one of claims 1-5 wherein the dissolution inhibitor has
2 or more fluorine atoms.
7. Photoresist according to any one of claims 1-6 wherein the acid group is an hydroxyl
group bound to an aromatic group, or a C(CF3)2OH bound to an aromatic ring.
8. Photoresist according to any one of claims 1-7 wherein the acid group is at least
partly blocked with a carbonate, acetal group, ortho ester, or tertiary alkyl group.
9. Photoresist according to any one of claims 1-8 wherein the dissolution inhibitor comprises
a bisphenol structure.
10. Compounds represented by formula 1.

in which n = 1-4
at least on of R
1-R
10 independently comprise a (blocked) acid group, the group when unblocked has a pKa
< 12.
the other R
1-R
10 represent independently hydrogen, fluorine or hydrocarbonaceous substituents.
R
11 is an aliphatic fluorinated group.
R
12 represents hydrogen or an aliphatic group having 1-10 carbon atoms and 0-13 fluorine
atoms,
and R
11 and R
12 are not both CF
3.
11. Compound according to claim 10 wherein R11 preferably is a C2-C10 group, having 2-20 fluorine atoms.
12. Compound according to any one of claims 10-11 wherein one of {R1-R3, R9, R10} and one of R4-R8, independently, are preferably hydroxy or C(CF3)2OH, any of these optionally protected with an acid labile protecting group.
13. Compound according to any one of claims 10-12 wherein the other R1-R10independently, are hydrogen.
14. Compound according to any one of claims 10-13 wherein R12 preferably is hydrogen.
15. Process for forming an etched layer in a chip comprisis, in order:
(A) forming a photoresist layer on a substrate
wherein the photoresist layer is prepared from a photoresist composition comprising:
(a) a binder;
(b) a photoactive component; and
(c) the at least one dissolution inhibitor, the dissolution inhibitor comprising at
least (i) two aromatic groups (ii) fluorine, and (iii) a (blocked) acid group which
when unblocked has a pKa < 12
(B) imagewise exposing a photoresist layer to form imaged and non-imaged areas,
(C) developing the exposed photoresist layer having imaged and non-imaged areas to
form the relief image on the substrate
(D) etching the substrate to a predetermined depth
(E) removing the relief image from the substrate.