(19)
(11) EP 1 502 297 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
05.07.2006 Bulletin 2006/27

(45) Mention of the grant of the patent:
16.11.2005 Bulletin 2005/46

(21) Application number: 03729419.6

(22) Date of filing: 03.01.2003
(51) International Patent Classification (IPC): 
H01L 21/762(1995.01)
H01L 21/316(1974.07)
 H01L 21/311(1990.01)
(86) International application number:
PCT/EP2003/000037
(87) International publication number:
WO 2003/060991 (24.07.2003 Gazette 2003/30)

(54)

DOUBLE PULLBACK METHOD OF FILLING AN ISOLATION TRENCH

DOPPEL-PULLBACK-VERFAHREN ZUM FÜLLEN EINES ISOLATIONSGRABENS

PROCEDE DE DOUBLE RAPPEL DE REMPLISSAGE D'UNE TRANCHEE D'ISOLATION

(84) Designated Contracting States:
DE FR IT

(30) Priority: 04.01.2002 US 37551

(43) Date of publication of application:
02.02.2005 Bulletin 2005/05

(73) Proprietor: Infineon Technologies AG
81669 München (DE)

(72) Inventor:
  • VON EHRENWALL, Andreas
    Wappingers Falls, NY 12590 (US)

(74) Representative: Barth, Stephan Manuel 
Reinhard-Skuhra-Weise & Partner GbR, Patentanwälte Friedrichstrasse 31
80801 München
80801 München (DE)


(56) References cited: : 
US-A- 5 989 975
US-A1- 2001 012 676
 US-A- 6 027 982
   
  • NANDAKUMAR M ET AL: "Shallow trench isolation for advanced ULSI CMOS technologies" ELECTRON DEVICES MEETING, 1998. IEDM '98 TECHNICAL DIGEST., INTERNATIONAL SAN FRANCISCO, CA, USA 6-9 DEC. 1998, PISCATAWAY, NJ, USA,IEEE, US, 6 December 1998 (1998-12-06), pages 133-136, XP010321451 ISBN: 0-7803-4774-9
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).