SEMICONDUCTOR MEMORY DEVICE HAVING A FERROELECTRIC CAPACITOR AND A MANUFACTURING METHOD THEREOF - Patent 1516366

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EP 1 516 366 A2

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(88)	Date of publication A3:
	22.04.2004

(43)	Date of publication:
	23.03.2005 Bulletin 2005/12

(21)	Application number: 03733374.7

(22)	Date of filing: 11.06.2003

(51)	International Patent Classification (IPC)⁷: H01L 27/115, H01L 21/8246

(86)	International application number:
	PCT/JP2003/007431

(87)	International publication number:
	WO 2003/107425 (24.12.2003 Gazette 2003/52)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

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Priority:

17.06.2002 JP 2002176029

(71)	Applicants:
	Kabushiki Kaisha Toshiba Tokyo 105-8001 (JP) Infineon Technologies AG 81669 München (DE)

(72)	Inventors:
	Kanaya, Hiroyuki,Toshiba Corporation Minato-ku, Tokyo 105-8001 (JP) Hilliger, Andreas Naka-ku, Yokohama-shi, Kanagawa 231-0862 (JP)

(74)	Representative: HOFFMANN - EITLE
	Patent- und RechtsanwälteArabellastrasse 4 81925 München 81925 München (DE)

(54)	SEMICONDUCTOR MEMORY DEVICE HAVING A FERROELECTRIC CAPACITOR AND A MANUFACTURING METHOD THEREOF