(19)
(11) EP 1 519 227 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION

(48) Corrigendum issued on:
27.07.2005 Bulletin 2005/30

(43) Date of publication:
30.03.2005 Bulletin 2005/13

(21) Application number: 04022611.0

(22) Date of filing: 22.09.2004
(51) International Patent Classification (IPC)7: G03F 7/00
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL HR LT LV MK

(30) Priority: 23.09.2003 IT TO20030730

(71) Applicant: INFM Istituto Nazionale per la Fisica della Materia
16152 Genova (IT)

(72) Inventors:
  • Romanato, Filippo
    34016 Conconello (Trento) (IT)
  • Di Fabrizio, Enzo
    34124 Trieste (IT)
  • Kumar, Rakesh
    160036 Chandigarh (IN)

(74) Representative: Gerbino, Angelo et al
Jacobacci & Partners S.p.A. Corso Emilia, 8
10152 Torino
10152 Torino (IT)

   


(54) Method for fabricating complex three-dimensional structures on the submicrometric scale by combined lithography of two resists


(57) What is described is a lithographic method for fabricating three-dimensional structures on the micrometric and submicro-metric scale, including the operations of:
  • depositing a layer (L1) of a first resist (R1) on a substrate (S);
  • depositing a layer (L') of a second resist (R2) on the layer (L1) of the first resist (R1);
  • forming a pattern of the second resist (R2) by lithography;
  • depositing a further layer (L2) of the first resist (R1) on the previous layers; and
  • forming a pattern of the first resist (R1) by lithography.

The second resist (R2) is sensitive to exposure to charged particles or to electromagnetic radiation in a different way from the first (R1); in other words, it is transparent to the particles or to the electromagnetic radiation to which the first resist (R1) is sensitive, and therefore the processes of exposure and development of the two resists (R1, R2) are mutually incompatible to the extent that the exposure and development of one does not interfere with the exposure and development of the other.