(19)
(11) EP 1 523 025 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
20.04.2005 Bulletin 2005/16

(43) Date of publication A2:
13.04.2005 Bulletin 2005/15

(21) Application number: 02022014.1

(22) Date of filing: 01.10.2002
(51) International Patent Classification (IPC)7: H01J 1/312
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 25.03.2002 JP 2002083927
25.03.2002 JP 2002083928

(71) Applicant: Matsushita Electric Works, Ltd.
Kadoma-shi, Osaka (JP)

(72) Inventors:
  • Komoda, Takuya
    Kadoma-shi, Osaka 571-8686 (JP)
  • Takegawa, Yoshiyuki
    Kadoma-shi, Osaka 571-8686 (JP)
  • Aizawa, Koichi
    Kadoma-shi, Osaka 571-8686 (JP)
  • Hatai, Takashi
    Kadoma-shi, Osaka 571-8686 (JP)
  • Ichihara, Tsutomu
    Kadoma-shi, Osaka 571-8686 (JP)
  • Honda, Yoshiaki
    Kadoma-shi, Osaka 571-8686 (JP)
  • Watabe, Yoshifumi
    Kadoma-shi, Osaka 571-8686 (JP)
  • Baba, Toru
    Kadoma-shi, Osaka 571-8686 (JP)

(74) Representative: Dallmeyer, Georg, Dipl.-Ing. et al
Patentanwälte von Kreisler-Selting-Werner Postfach 10 22 41
50462 Köln
50462 Köln (DE)

   


(54) Field emission-type electron source


(57) A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).






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