| (84) |
Etats contractants désignés: |
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AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
| (30) |
Priorité: |
18.07.2002 FR 0209118
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| (43) |
Date de publication de la demande: |
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20.04.2005 Bulletin 2005/16 |
| (73) |
Titulaires: |
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- COMMISSARIAT A L'ENERGIE ATOMIQUE
75015 Paris (FR)
- S.O.I.Tec Silicon on Insulator Technologies
38190 Bernin (FR)
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| (72) |
Inventeurs: |
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- DI CIOCCIO, Léa
F-38330 SAINT ISMIER (FR)
- LETERTRE, Fabrice
F-38000 GRENOBLE (FR)
- HUGONNARD-BRUYERE, Elsa
F-13710 FUVEAU (FR)
|
| (74) |
Mandataire: Poulin, Gérard et al |
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Brevalex
3, rue du Docteur Lancereaux
75008 Paris
75008 Paris (FR) |
| (56) |
Documents cités: :
WO-A-02/37556
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US-A- 6 150 239
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- HUGONNARD-BRUYERE E ET AL: "Electrical and physical behavior of SiC layers on insulator
(SiCOI)" INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS, ICSRM'99,
RESEARCH TRIANGLE PARK, NC, USA, 10-15 OCT. 1999, vol. 338-342, pt.1, pages 715-718,
XP008017315 Materials Science Forum, 2000, Trans Tech Publications, Switzerland ISSN:
0255-5476
- HUGONNARD-BRUYERE E ET AL: "Defect Studies in Epitaxial SiC-6H Layers on Insulator
(SiCOI)" MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol.
48, no. 1-4, septembre 1999 (1999-09), pages 277-280, XP004193305 ISSN: 0167-9317
- HUGONNARD-BRUYERE E ET AL: "Deep level defects in Himplanted 6H-SiC epilayers and
in silicon carbide on insulator structures" MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER
SEQUOIA, LAUSANNE, CH, vol. 61-62, 30 juillet 1999 (1999-07-30), pages 382-388, XP004363371
ISSN: 0921-5107
- GREGORY R B ET AL: "The effects of damage on hydrogen-implant-induced thin-film separation
from bulk silicon carbide" WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY
AND HIGH-TEMPERATURE APPLICATIONS - 1999. SYMPOSIUM, WIDE-BANDGAP SEMICONDUCTORS FOR
HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS - 1999. SYMPOSIUM, SAN
FRANCISCO, CA, USA, 5-, pages 33-38, XP001040858 1999, Warrendale, PA, USA, Mater.
Res. Soc, USA
- BINARI S C ET AL: "H, He, and N implant isolation of n-type GaN" JOURNAL OF APPLIED
PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 5, 1 septembre
1995 (1995-09-01), pages 3008-3011, XP002185242 ISSN: 0021-8979
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