(19)
(11) EP 1 525 623 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
18.04.2007 Bulletin 2007/16

(45) Mention of the grant of the patent:
07.02.2007 Bulletin 2007/06

(21) Application number: 03740528.9

(22) Date of filing: 18.07.2003
(51) International Patent Classification (IPC): 
H01L 31/101(2006.01)
H01L 23/48(2006.01)
 H01L 31/0352(2006.01)
(86) International application number:
PCT/FI2003/000575
(87) International publication number:
WO 2004/012274 (05.02.2004 Gazette 2004/06)

(54)

SEMICONDUCTOR STRUCTURE FOR IMAGING DETECTORS

HALBLEITERSTRUKTUR FÜR BILDDETEKTOREN

STRUCTURE DE SEMI-CONDUCTEURS POUR DETECTEUR D'IMAGERIE

(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GR HU IE IT LI LU MC NL PT RO SE SI SK TR

(30) Priority: 26.07.2002 GB 0217394

(43) Date of publication of application:
27.04.2005 Bulletin 2005/17

(73) Proprietor: Detection Technology OY
91100 Ii (FI)

(72) Inventor:
  • HIETANEN, Iiro
    FIN-07780 Härkäpää (FI)

(74) Representative: Williams, David John et al
Page White & Farrer Bedford House John Street
London, WC1N 2BF
London, WC1N 2BF (GB)


(56) References cited: : 
WO-A-98/54554
US-B1- 6 173 031
 US-A- 5 599 744
US-B1- 6 396 898
   
  • PATENT ABSTRACTS OF JAPAN vol. 1999, no. 14, 22 December 1999 (1999-12-22) & JP 11 261086 A (SHARP CORP), 24 September 1999 (1999-09-24)
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).