(19)
(11) EP 1 537 263 A2

(12)

(88) Date of publication A3:
27.01.2005

(43) Date of publication:
08.06.2005 Bulletin 2005/23

(21) Application number: 03810871.8

(22) Date of filing: 12.08.2003
(51) International Patent Classification (IPC)7D02G 3/00, G09G 3/34, G01N 33/543, H01L 31/00, C09K 11/00
(86) International application number:
PCT/US2003/025174
(87) International publication number:
WO 2004/053929 (24.06.2004 Gazette 2004/26)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
Designated Extension States:
AL LT LV MK

(30) Priority: 13.08.2002 US 402726 P

(71) Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Cambridge, MA 02142-1324 (US)

(72) Inventors:
  • KIM, Sungjee
    Pasadena,California 91125 (US)
  • BAWENDI, Moungi, G.
    Boston, MA 02116 (US)

(74) Representative: Mallalieu, Catherine Louise et al
D Young & Co120 Holborn
London EC1N 2DY
London EC1N 2DY (GB)

   


(54) SEMICONDUCTOR NANOCRYSTAL HETEROSTRUCTURES