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<SDOBI lang="en"><B000><eptags><B001EP>......DE......GB..IT....NL..........................................................................</B001EP><B003EP>*</B003EP><B005EP>J</B005EP><B007EP>DIM360 Ver 2.15 (14 Jul 2008) -  2999001/0</B007EP></eptags></B000><B100><B110>1543546</B110><B120><B121>CORRECTED EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20100616</date></B140><B150><B151>W1</B151><B153>73</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>03788439.2</B210><B220><date>20030813</date></B220><B240><B241><date>20050314</date></B241><B242><date>20070412</date></B242></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>218668</B310><B320><date>20020814</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>20100616</date><bnum>201024</bnum></B405><B430><date>20050622</date><bnum>200525</bnum></B430><B450><date>20100331</date><bnum>201013</bnum></B450><B452EP><date>20091023</date></B452EP><B480><date>20100616</date><bnum>201024</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/30        20060101AFI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  21/46        20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="3"><text>H01L  21/3205      20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="4"><text>H01L  21/332       20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="5"><text>H01L  21/336       20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="6"><text>H01L  21/425       20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="7"><text>H01L  29/72        20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="8"><text>H01L  29/76        20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="9"><text>H01L  29/94        20060101ALI20040312BHEP        </text></classification-ipcr><classification-ipcr sequence="10"><text>H01L  31/062       20060101ALI20040312BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>VERFAHREN ZUR HERSTELLUNG EINES ISOLIERTEN FELDEFFEKT-TRANSISTORS IN EINEM EPI-LOSEN SUBSTRAT</B542><B541>en</B541><B542>PROCESS FOR FABRICATING AN ISOLATED FIELD EFFECT TRANSISTOR IN AN EPI-LESS SUBSTRATE</B542><B541>fr</B541><B542>PROCEDE D'FABRICATION D'UN TRANSISTOR A EFFET DE CHAMP ISOLE DANS UN SUBSTRAT DEPOURVU DE COUCHE EPITAXIALE</B542></B540><B560><B561><text>WO-A-02/052649</text></B561><B561><text>WO-A-03/054950</text></B561><B561><text>GB-A- 2 320 812</text></B561><B561><text>JP-A- 2000 114 361</text></B561><B561><text>US-A- 5 286 995</text></B561><B561><text>US-A- 5 569 620</text></B561><B561><text>US-A- 5 798 295</text></B561><B561><text>US-A- 5 817 546</text></B561><B561><text>US-A- 2001 000 288</text></B561><B561><text>US-B1- 6 184 557</text></B561><B561><text>US-B1- 6 251 757</text></B561><B561><text>US-B1- 6 297 119</text></B561><B561><text>US-B1- 6 359 317</text></B561><B561><text>US-B1- 6 365 447</text></B561><B561><text>US-B1- 6 391 754</text></B561><B561><text>US-B1- 6 406 974</text></B561><B561><text>US-B1- 6 501 131</text></B561><B561><text>US-B1- 6 586 297</text></B561><B561><text>US-B1- 6 630 699</text></B561><B561><text>US-B2- 6 617 217</text></B561><B562><text>CONTIERO C ET AL: "LDMOS implementation by large tilt implant in 0.6 /spl mu/m BCD5 process, flash memory compatible" POWER SEMICONDUCTOR DEVICES AND ICS, 1996. ISPSD '96 PROCEEDINGS., 8TH INTERNATIONAL SYMPOSIUM ON MAUI, HI, USA 20-23 MAY 1996, NEW YORK, NY, USA,IEEE, US, 20 May 1996 (1996-05-20), pages 75-78, XP010165456 ISBN: 0-7803-3106-0</text></B562><B562><text>KUROI T ET AL: "BIPOLAR TRANSISTOR WITH A BURIED LAYER FORMED BY HIGH-ENERGY ION IMPLANTATION FOR SUBHALF-MICRON BIPOLAR-COMPLEMENTARY METAL OXIDE SEMICONDUCTOR LSIS" JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 33, no. 1B, PART 1, January 1994 (1994-01), pages 541-545, XP000596411 ISSN: 0021-4922</text></B562><B565EP><date>20061206</date></B565EP></B560></B500><B600><B620EP><parent><cdoc><dnum><anum>10158458.9</anum></dnum><date>20100330</date></cdoc></parent></B620EP></B600><B700><B720><B721><snm>WILLIAMS, Richard, K.</snm><adr><str>10292 Norwich Ave.</str><city>Cupertino, CA 95014</city><ctry>US</ctry></adr></B721><B721><snm>CORNELL, Michael, E.</snm><adr><str>1576 Summerfield Drive</str><city>Campbell, CA 95008</city><ctry>US</ctry></adr></B721><B721><snm>CHAN, Wai Tien</snm><adr><str>2/F, House 80B, JC Castle
18 Shan Tong Road</str><city>Tai Po, N.T., Hong Kong</city><ctry>CN</ctry></adr></B721></B720><B730><B731><snm>Advanced Analogic Technologies, Inc.</snm><iid>10636840</iid><irf>77888EP (KI/SF)</irf><adr><str>3230 Scott Blvd.</str><city>Sanza Clara, California 95054</city><ctry>US</ctry></adr></B731></B730><B740><B741><snm>Kirschner, Klaus Dieter</snm><sfx>et al</sfx><iid>00006506</iid><adr><str>Puschmann Borchert Bardehle 
Patentanwälte Partnerschaft 
Postfach 10 12 31</str><city>80086 München</city><ctry>DE</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>NL</ctry></B840><B860><B861><dnum><anum>US2003025361</anum></dnum><date>20030813</date></B861><B862>en</B862></B860><B870><B871><dnum><pnum>WO2004017395</pnum></dnum><date>20040226</date><bnum>200409</bnum></B871></B870><B880><date>20050622</date><bnum>200525</bnum></B880></B800></SDOBI>
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