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<ep-patent-document id="EP1576650A2" country="EP" dtd-version="ep-patent-document-v1-4.dtd" doc-number="1576650" date-publ="20050921" file="03754388.1" lang="en" kind="A2" status="n"><SDOBI lang="en"><B000><eptags><B001EP>ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHU..SK................</B001EP><B003EP>*</B003EP><B005EP>X</B005EP><B007EP>DIM350 (Ver 2.1 Jan 2001) 1100000/0 1710000/0</B007EP></eptags></B000><B100><B110>1576650</B110><B130>A2</B130><B140><date>20050921</date></B140><B190>EP</B190></B100><B200><B210>03754388.1</B210><B220><date>20030815</date></B220><B240><B241><date>20050315</date></B241></B240><B250>En</B250><B251EP>En</B251EP><B260>En</B260></B200><B300><B310>403796 P</B310><B320><date>20020815</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>20050921</date><bnum>200538</bnum></B405><B430><date>20050921</date><bnum>200538</bnum></B430></B400><B500><B510><B516>7</B516><B511> 7H 01L  21/00   A</B511></B510><B540><B541>de</B541><B542>VERFAHERN ZUR MIKROHERSTELLUNG VON STRUKTUREN UNTER VERWENDUNG VON SILIZIUM-AUF-ISOLATOR-MATERIAL</B542><B541>en</B541><B542>METHOD FOR MICROFABRICATING STRUCTURES USING SILICON-ON-INSULATOR MATERIAL</B542><B541>fr</B541><B542>PROCEDE DE MICROUSINAGE DE STRUCTURES UTILISANT UN MATERIAU DE SILICIUM SUR ISOLANT</B542></B540></B500><B700><B710><B711><snm>THE CHARLES STARK DRAPER LABORATORY, INC.</snm><iid>00305181</iid><irf>600914PEP</irf><adr><str>555 Technology Square</str><city>Cambridge, MA 02139</city><ctry>US</ctry></adr></B711></B710><B720><B721><snm>SAWYER, William, D.</snm><adr><str>62 Magnolia Street</str><city>Arlington, MA 02474</city><ctry>US</ctry></adr></B721><B721><snm>BORENSTEIN, Jeffrey, T.</snm><adr><str>936 Highland Street</str><city>Holliston, MA 02146</city><ctry>US</ctry></adr></B721></B720><B740><B741><snm>Hill, Justin John</snm><iid>00127251</iid><adr><str>McDermott Will &amp; Emery UK LLP 7 Bishopsgate</str><city>London EC2N 3AR</city><ctry>GB</ctry></adr></B741></B740></B700><B800><B840><ctry>AT</ctry><ctry>BE</ctry><ctry>BG</ctry><ctry>CH</ctry><ctry>CY</ctry><ctry>CZ</ctry><ctry>DE</ctry><ctry>DK</ctry><ctry>EE</ctry><ctry>ES</ctry><ctry>FI</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>GR</ctry><ctry>HU</ctry><ctry>IE</ctry><ctry>IT</ctry><ctry>LI</ctry><ctry>LU</ctry><ctry>MC</ctry><ctry>NL</ctry><ctry>PT</ctry><ctry>RO</ctry><ctry>SE</ctry><ctry>SI</ctry><ctry>SK</ctry><ctry>TR</ctry></B840><B844EP><B845EP><ctry>AL</ctry></B845EP><B845EP><ctry>LT</ctry></B845EP><B845EP><ctry>LV</ctry></B845EP><B845EP><ctry>MK</ctry></B845EP></B844EP><B860><B861><dnum><anum>US2003025435</anum></dnum><date>20030815</date></B861><B862>En</B862></B860><B870><B871><dnum><pnum>WO2004017371</pnum></dnum><date>20040226</date><bnum>200409</bnum></B871></B870></B800></SDOBI></ep-patent-document>
