(19)
(11) EP 1 584 100 A2

(12)

(88) Date of publication A3:
12.08.2004

(43) Date of publication:
12.10.2005 Bulletin 2005/41

(21) Application number: 03813046.4

(22) Date of filing: 19.12.2003
(51) International Patent Classification (IPC)7H01L 21/00
(86) International application number:
PCT/US2003/040793
(87) International publication number:
WO 2004/057653 (08.07.2004 Gazette 2004/28)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
Designated Extension States:
AL LT LV MK

(30) Priority: 20.12.2002 US 435813 P
20.12.2002 US 327467

(71) Applicant: APPLIED MATERIALS, INC.
California 95054 (US)

(72) Inventors:
  • WANG, Shulin
    Campbell, CA 95008 (US)
  • SANCHEZ, Errol, Antonio, C.
    Dublin, CA 94658 (US)
  • CHEN, Aihua, (Steven)
    San Jose, CA 95121 (US)

(74) Representative: Bayliss, Geoffrey Cyril 
BOULT WADE TENNANT, Verulam Gardens 70 Gray's Inn Road
London WC1X 8BT
London WC1X 8BT (GB)

   


(54) A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER