(19)
(11) EP 1 584 104 A2

(12)

(88) Date of publication A3:
03.03.2005

(43) Date of publication:
12.10.2005 Bulletin 2005/41

(21) Application number: 03799903.4

(22) Date of filing: 12.12.2003
(51) International Patent Classification (IPC)7H01L 21/425, H01L 21/26, H01L 21/44, H01L 21/302, H01L 21/324
(86) International application number:
PCT/US2003/039754
(87) International publication number:
WO 2004/053945 (24.06.2004 Gazette 2004/26)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
Designated Extension States:
AL LT LV MK

(30) Priority: 12.12.2002 US 433866 P

(71) Applicant: Epion Corporation
Billerica, MA 01821 (US)

(72) Inventors:
  • KIRKPATRICK, Allen, R.
    Carlisle, MA 01741 (US)
  • HAUTALA, John, J.
    Beverly, MA 01915 (US)
  • TABAT, Martin, D.
    Nashua, NH 03063 (US)
  • TETREAULT, Thomas, G.
    Manchester, NH 03104 (US)
  • KIRKPATRICK, Sean
    Littleton, MA 01460 (US)

(74) Representative: Casey, Lindsay Joseph et al
F. R. Kelly & Co. 27 Clyde Road Ballsbridge
Dublin 4
Dublin 4 (IE)

   


(54) RE-CRYSTALLIZATION OF SEMICONDUCTOR SURFACE FILM AND DOPING OF SEMICONDUCTOR BY ENERGETIC CLUSTER IRRADIATION