METHOD OF PRODUCING P-DOPED SILICON SINGLE CRYSTAL AND P-DOPED N-TYPE SILICON SINGLE CRYSTAL WAFER

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EP 1 591 566 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	18.11.2015 Bulletin 2015/47

(45)	Mention of the grant of the patent:
	14.10.2015 Bulletin 2015/42

(21)	Application number: 03768274.7

(22)	Date of filing: 25.12.2003

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International Patent Classification (IPC):

C30B 29/06^(2006.01)
C30B 15/20^(2006.01)

C30B 15/04^(2006.01)

(86)	International application number:
	PCT/JP2003/016794

(87)	International publication number:
	WO 2004/065666 (05.08.2004 Gazette 2004/32)

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METHOD OF PRODUCING P-DOPED SILICON SINGLE CRYSTAL AND P-DOPED N-TYPE SILICON SINGLE CRYSTAL WAFER

VERFAHREN ZUR HERSTELLUNG EINES SILIKON-EINZELKRISTALLS MIT P-ZUSATZ UND EINES SILIKON-EINZELKRISTALL-WAFERS MIT P-ZUSATZ DES TYPS N

PROCEDE DE PRODUCTION D'UN MONOCRISTAL DE SILICIUM A DOPAGE P ET TRANCHE A MONOCRISTAL DE SILICIUM A DOPAGE P ET DE TYPE N

(84)	Designated Contracting States:
	DE

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Priority:

17.01.2003 JP 2003010436

(43)	Date of publication of application:
	02.11.2005 Bulletin 2005/44

(73)	Proprietor: Shin-Etsu Handotai Co., Ltd.
	Tokyo (JP)

(72)	Inventors:
	SAKURADA, Masahiro, c/o Shin-Etsu Handotai Co. Ltd Nishishirakawa-gun, Fukushima 961-8061 (JP) FUSEGAWA, Izumi, c/o Shin-Etsu Handotai Co. Ltd. Nishishirakawa-gun, Fukushima 961-8061 (JP)

(74)	Representative: Wibbelmann, Jobst et al
	Wuesthoff & Wuesthoff Patentanwälte PartG mbB Schweigerstrasse 2 81541 München 81541 München (DE)

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References cited: :

EP-A2- 0 903 429
JP-A- 2000 351 690

JP-A- 2000 351 690

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).