(19)
(11) EP 1 595 280 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
28.02.2007 Bulletin 2007/09

(45) Mention of the grant of the patent:
27.12.2006 Bulletin 2006/52

(21) Application number: 04711402.0

(22) Date of filing: 16.02.2004
(51) International Patent Classification (IPC): 
H01L 21/20(2006.01)
 C30B 29/38(2006.01)
(86) International application number:
PCT/GB2004/000560
(87) International publication number:
WO 2004/075249 (02.09.2004 Gazette 2004/36)

(54)

Buffer structure for heteroepitaxy on a silicon substrate

Pufferstruktur für Heteroepitaxie auf einem siliziumsubstrat

Structure tampon pour hétéroépitaxie sur un substrat de silicium

(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GR HU IE IT LI LU MC NL PT RO SE SI SK TR

(30) Priority: 19.02.2003 GB 0303784

(43) Date of publication of application:
16.11.2005 Bulletin 2005/46

(73) Proprietor: QinetiQ Limited
London, SW1E 6PD (GB)

(72) Inventor:
  • WALLIS, David, John
    Malvern, Worcs WR14 3PS (GB)

(74) Representative: Lowther, Deborah Jane 
QinetiQ Limited Intellectual Property, Cody Technology Park, Ively Road
Farnborough, Hants GU14 0LX
Farnborough, Hants GU14 0LX (GB)


(56) References cited: : 
US-A1- 2002 187 356
 US-B1- 6 472 694
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).