| (19) |
 |
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(11) |
EP 1 598 805 A8 |
| (12) |
CORRECTED EUROPEAN PATENT APPLICATION |
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Note: Bibliography reflects the latest situation |
| (15) |
Correction information: |
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Corrected version no 1 (W1 A2) |
| (48) |
Corrigendum issued on: |
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01.02.2006 Bulletin 2006/05 |
| (43) |
Date of publication: |
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23.11.2005 Bulletin 2005/47 |
| (22) |
Date of filing: 18.05.2005 |
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| (51) |
International Patent Classification (IPC):
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| (84) |
Designated Contracting States: |
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AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI
SK TR |
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Designated Extension States: |
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AL BA HR LV MK YU |
| (30) |
Priority: |
24.05.2004 KR 2004036868
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| (71) |
Applicant: Samsung SDI Co., Ltd. |
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Suwon-si
Gyeonggi-do (KR) |
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| (72) |
Inventor: |
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- YOON, Han-Hee,
Legal & IP Team
Kiheung-Eup, Yongin-City, Kyeonggi-Do (KR)
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| (74) |
Representative: Hengelhaupt, Jürgen et al |
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Anwaltskanzlei
Gulde Hengelhaupt Ziebig & Schneider
Wallstrasse 58/59 10179 Berlin 10179 Berlin (DE) |
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| |
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| (54) |
SRAM core cell for light-emitting display |
(57) A SRAM core cell for a light-emitting display applicable to a data driver of an organic
electro-luminescence light-emitting display device includes thin film transistors
as a data memory for a data driver of the light-emitting display. The SRAM core cell
also includes switching transistors and data memory transistors. The switching transistors
are coupled to a bit line and a word line to select data writing or reading. The data
memory transistors are coupled to a power voltage or a ground voltage to enable data
writing and reading. The bit line and the word line are formed in first and second
directions. The channels of the switching transistors and the data memory transistors
are formed in an oblique direction with respect to the first and second directions.