(19)
(11) EP 1 601 009 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 158(3) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
01.02.2006 Bulletin 2006/05

(43) Date of publication:
30.11.2005 Bulletin 2005/48

(21) Application number: 04712740.2

(22) Date of filing: 19.02.2004
(51) International Patent Classification (IPC): 
H01L 21/205(1974.07)
 H01L 21/31(1974.07)
(86) International application number:
PCT/JP2004/001944
(87) International publication number:
WO 2004/079803 (16.09.2004 Gazette 2004/38)
(84) Designated Contracting States:
DE FR GB

(30) Priority: 05.03.2003 JP 2003057983

(71) Applicant: Sumitomo Electric Industries, Ltd.
Osaka-shi, Osaka 541-0041 (JP)

(72) Inventors:
  • KYONO, Takashi, Itami Works Sumitomo Ele. Ind. Ltd
    Itami-shi, Hyogo 6640016 (JP)
  • UENO, Masaki, Itami Works Sumitomo Ele. Ind. Ltd
    Itami-shi, Hyogo 6640016 (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Maximilianstrasse 58
80538 München
80538 München (DE)

   


(54) NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME


(57) Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced, and makes available nitride-based semiconductor devices manufactured by the method.
Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing a Group 3B element for forming compounds with nitrogen, and nitrogen, including steps of heating the semiconductor substrate (1) to a film-deposition temperature, supplying to the substrate a film-deposition gas containing a source gas for the Group 3B element and a nitrogen source gas, and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing the Group 3B element and nitrogen, and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.