<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.3//EN" "ep-patent-document-v1-3.dtd">
<ep-patent-document id="EP05019014B8W1" file="EP05019014W1B8.xml" lang="en" country="EP" doc-number="1607954" kind="B8" correction-code="W1" date-publ="20090408" status="c" dtd-version="ep-patent-document-v1-3">
<SDOBI lang="en"><B000><eptags><B001EP>....CHDE....FRGB....LI..NL......................................................</B001EP><B005EP>J</B005EP><B007EP>DIM360 Ver 2.15 (14 Jul 2008) -  2999001/0</B007EP></eptags></B000><B100><B110>1607954</B110><B120><B121>CORRECTED EUROPEAN PATENT SPECIFICATION</B121></B120><B130>B8</B130><B132EP>B1</B132EP><B140><date>20090408</date></B140><B150><B151>W1</B151><B153>30</B153><B155><B1551>de</B1551><B1552>Bibliographie</B1552><B1551>en</B1551><B1552>Bibliography</B1552><B1551>fr</B1551><B1552>Bibliographie</B1552></B155></B150><B190>EP</B190></B100><B200><B210>05019014.9</B210><B220><date>20010504</date></B220><B240><B241><date>20050901</date></B241><B242><date>20061201</date></B242></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>219843 P</B310><B320><date>20000721</date></B320><B330><ctry>US</ctry></B330><B310>834775 P</B310><B320><date>20010413</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>20090408</date><bnum>200915</bnum></B405><B430><date>20051221</date><bnum>200551</bnum></B430><B450><date>20081126</date><bnum>200848</bnum></B450><B452EP><date>20080625</date></B452EP><B480><date>20090408</date><bnum>200915</bnum></B480></B400><B500><B510EP><classification-ipcr sequence="1"><text>G11B   7/24        20060101AFI20051017BHEP        </text></classification-ipcr></B510EP><B540><B541>de</B541><B542>Metalllegierungen für Reflektionsschichten oder Semi-Reflektionsschichten in optischen Aufzeichnungsträgern</B542><B541>en</B541><B542>Metal alloys for the reflective or the semi-reflective layer of an optical storage medium</B542><B541>fr</B541><B542>Alliages métalliques pour des couches de réflection ou de semi-réflection dans des supports d' enregistrement optique</B542></B540><B560><B561><text>EP-A- 0 867 868</text></B561><B561><text>EP-A- 0 917 137</text></B561><B561><text>US-A- 4 709 363</text></B561><B561><text>US-A- 5 882 759</text></B561><B562><text>PATENT ABSTRACTS OF JAPAN vol. 016, no. 121 (P-1329), 26 March 1992 (1992-03-26) &amp; JP 03 288346 A (TEIJIN LTD), 18 December 1991 (1991-12-18)</text></B562></B560></B500><B600><B620><parent><pdoc><dnum><anum>01110879.2</anum><pnum>1174868</pnum></dnum><date>20010504</date></pdoc></parent></B620><B620EP><parent><cdoc><dnum><anum>08009656.3</anum><pnum>1956597</pnum></dnum><date>20080527</date></cdoc><cdoc><dnum><anum>08009657.1</anum><pnum>1956598</pnum></dnum><date>20080527</date></cdoc></parent></B620EP></B600><B700><B720><B721><snm>Nee, Han H.</snm><adr><str>7 Sommet</str><city>Newport Beach, CA 92657</city><ctry>US</ctry></adr></B721></B720><B730><B731><snm>Target Technology Company, LLC.</snm><iid>07105320</iid><irf>EPA-95 864</irf><adr><str>564 Wald</str><city>Irvine CA 92618</city><ctry>US</ctry></adr></B731></B730><B740><B741><snm>von Hellfeld, Axel</snm><iid>00053042</iid><adr><str>Wuesthoff &amp; Wuesthoff 
Patent- und Rechtsanwälte 
Schweigerstrasse 2</str><city>81541 München</city><ctry>DE</ctry></adr></B741></B740></B700><B800><B840><ctry>CH</ctry><ctry>DE</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>LI</ctry><ctry>NL</ctry></B840><B880><date>20060920</date><bnum>200638</bnum></B880></B800></SDOBI>
</ep-patent-document>
