RADIATION-HARDENED TRANSISTOR FABRICATED BY MODIFIED CMOS PROCESS - Patent 1614162

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EP 1 614 162 A2

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(88)	Date of publication A3:
	16.12.2004

(43)	Date of publication:
	11.01.2006 Bulletin 2006/02

(21)	Application number: 04759937.8

(22)	Date of filing: 16.04.2004

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International Patent Classification (IPC):

H01L 29/10^(1974.07)

(86)	International application number:
	PCT/US2004/011818

(87)	International publication number:
	WO 2004/095583 (04.11.2004 Gazette 2004/45)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
	Designated Extension States:
	AL HR LT LV MK

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Priority:

16.04.2003 US 417021

(71)	Applicant: RAYTHEON COMPANY
	Waltham, MA 02451 (US)

(72)	Inventor:
	LUM, Wing Y. Santa Barbara, CA 93111 (US)

(74)	Representative: Lindner, Michael
	Witte, Weller & Partner, Patentanwälte, Postfach 105462 70047 Stuttgart 70047 Stuttgart (DE)

(54)	RADIATION-HARDENED TRANSISTOR FABRICATED BY MODIFIED CMOS PROCESS