Apparatus and method for maskless lithography

(19)

(11)

EP 1 617 290 A8

(12)	CORRECTED EUROPEAN PATENT APPLICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 A1)

(48)	Corrigendum issued on:
	10.05.2006 Bulletin 2006/19

(43)	Date of publication:
	18.01.2006 Bulletin 2006/03

(21)	Application number: 04405446.8

(22)	Date of filing: 13.07.2004

(51)

International Patent Classification (IPC):

G03F 7/20^(2006.01)

H01J 37/317^(2006.01)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
	Designated Extension States:
	AL HR LT LV MK

(71)	Applicant: International Business Machines Corporation
	Armonk, NY 10504 (US)

(72)	Inventors:
	Allenspach, Rolf CH-8314, Adliswil (CH) Marx, Gebhard CH-8135, Langnau am Albis (CH) Riess, Walter CH-8800 Thalwil (CH)

(74)	Representative: Kretschmer, Thomas et al
	IBM Research GmbH Zurich Research Laboratory Säumerstrasse 4 / Postfach 8803 Rüschlikon 8803 Rüschlikon (CH)


	Remarks:
	A request for correction of the description has been filed pursuant to Rule 88 EPC. A decision on the request will be taken during the proceedings before the Examining Division (Guidelines for Examination in the EPO, A-V, 3.).

(54)	Apparatus and method for maskless lithography

(57) The present invention is related to an apparatus and method for maskless lithography. The apparatus comprises an electron accelerating chamber (10) for accelerating electrons towards a support (12) on which a substrate (15) is mountable; a photon switching unit (20,21); and an electron emission layer (22) on the photon switching unit for outcoupling the electrons into the chamber. The photon switching unit with the electron emission layer is disposed opposite to the support and outcoupled electrons are directly acceleratable towards the support.