(19)
(11) EP 1 617 475 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 158(3) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
12.04.2006 Bulletin 2006/15

(43) Date of publication:
18.01.2006 Bulletin 2006/03

(21) Application number: 04724181.5

(22) Date of filing: 29.03.2004
(51) International Patent Classification (IPC): 
H01L 27/04(1974.07)
H01Q 1/38(1968.09)
H01L 21/3205(1990.01)
H01Q 1/40(1968.09)
(86) International application number:
PCT/JP2004/004419
(87) International publication number:
WO 2004/095576 (04.11.2004 Gazette 2004/45)
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 23.04.2003 JP 2003117826

(71) Applicant: Japan Science and Technology Agency
Kawaguchi-shi, Saitama 332-0012 (JP)

(72) Inventors:
  • KIKKAWA, Takamaro
    Higashihiroshima-shi, Hiroshima 739-0046 (JP)
  • IWATA, Atsushi
    Higashi-hiroshima-shi, Hiroshima 739-004 (JP)
  • SUNAMI, Hideo
    Higashi-hiroshima-shi, Hiroshima 739-004 (JP)
  • MATTAUSCH, Hans Jurgen
    Higashihiroshima-shi, Hiroshima 739-0034 (JP)
  • YOKOYAMA, Shin
    Higashihiroshima-shi, Hiroshima 739-2115 (JP)
  • SHIBAHARA, Kentaro
    Higashihiroshima-shi, Hiroshima 739-0025 (JP)
  • NAKAJIMA, Anri
    Higashihiroshima-shi, Hiroshima 739-0021 (JP)
  • KOIDE, Tetsushi
    Higashihiroshima-shi, Hiroshima 739-0024 (JP)
  • A.B.M, Harun-ur Rashid c/o Dpt of El. and El. Eng
    Dhaka 1000 (BD)
  • WATANABE, Shinji Room 1035
    Saiwai-cho,Takatsuki-shi, Osaka 569-1143 (JP)

(74) Representative: Hoarton, Lloyd Douglas Charles 
Forrester & Boehmert, Pettenkoferstrasse 20-22
80336 München
80336 München (DE)

   


(54) SEMICONDUCTOR DEVICE


(57) The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection. In the semiconductor device, wireless interconnection is accomplished in such a manner that the electromagnetic wave radiated from the transmitting antenna (3) placed on the semiconductor substrate (1) is transmitted to the receiving antenna (4) placed on the semiconductor substrate (1) or receiving antennas placed on semiconductor substrates; the semiconductor substrates have broadband transmitting/receiving antennas; a signal is transmitted from one or more of the semiconductor substrates and received with the receiving antenna or antennas placed on the semiconductor substrate (1) or substrates, respectively; and the signal transmitted and received has an ultra-wide band communication function.