P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT

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EP 1 628 337 A8

(12)	CORRECTED EUROPEAN PATENT APPLICATION
	published in accordance with Art. 158(3) EPC

(15)	Correction information:
	Corrected version no 1 (W1 A1)

(48)	Corrigendum issued on:
	18.10.2006 Bulletin 2006/42

(43)	Date of publication:
	22.02.2006 Bulletin 2006/08

(21)	Application number: 04745284.2

(22)	Date of filing: 24.05.2004

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International Patent Classification (IPC):

H01L 21/336^(2006.01)
H01L 21/316^(2006.01)

H01L 29/78^(2006.01)
H01L 21/304^(2006.01)

(86)	International application number:
	PCT/JP2004/007075

(87)	International publication number:
	WO 2004/105116 (02.12.2004 Gazette 2004/49)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

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Priority:

26.05.2003 JP 2003148275

(71)	Applicants:
	OHMI, Tadahiro Sendai-shi, Miyagi 980-0813 (JP) YAZAKI CORPORATION Minato-ku Tokyo 108-8333 (JP)

(72)	Inventors:
	Ohmi, Tadahiro Sendai-shi, Miyagi 9800813 (JP) Teramoto, Akinobu Sendai-shi, Miyagi 9830037 (JP) AKAHORI, Hiroshi Yokohama-shi Kanagawa 2410822 (JP) Nii, Keiichi Sendai-shi, Miyagi 9820825 (JP) Watanabe, Takanori Susono-shi, Shizuoka 4101194 (JP)

(74)	Representative: Wenzel & Kalkoff
	Grubesallee 26, Postfach 73 04 66 22124 Hamburg 22124 Hamburg (DE)

(54)	P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT

(57) In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.