(19)
(11) EP 1 628 908 A1

(12)

(43) Date of publication:
01.03.2006 Bulletin 2006/09

(21) Application number: 04707340.8

(22) Date of filing: 02.02.2004
(51) International Patent Classification (IPC): 
B82B 3/00(2000.01)
(86) International application number:
PCT/NZ2004/000020
(87) International publication number:
WO 2004/067445 (12.08.2004 Gazette 2004/33)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

(30) Priority: 31.01.2003 NZ 52392103
31.01.2003 NZ 52392203

(71) Applicant: INSTITUTE OF GEOLOGICAL & NUCLEAR SCIENCES LIMITED
Lower Hutt 6009 (NZ)

(72) Inventor:
  • MARKWITZ, Andreas
    Lower Hutt (NZ)

(74) Representative: Ribeiro, James Michael 
Withers & Rogers Goldings House 2 Hays Lane
London SE1 2HW
London SE1 2HW (GB)

   


(54) FORMATION OF SILICON NANOSTRUCTURES