Capacitor electrode for a ferroelectric memory cell and method for fabricating the same

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EP 1 632 990 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	28.06.2006 Bulletin 2006/26

(43)	Date of publication A2:
	08.03.2006 Bulletin 2006/10

(21)	Application number: 05026388.8

(22)	Date of filing: 24.05.2002

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International Patent Classification (IPC):

H01L 21/02^(2006.01)
H01L 27/115^(2006.01)

H01L 21/8247^(2006.01)
H01L 21/8246^(2006.01)

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
	Designated Extension States:
	AL LT LV MK RO SI

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Priority:

30.05.2001 JP 2001162901

(62)	Application number of the earlier application in accordance with Art. 76 EPC:
	02011471.6 / 1263037

(71)	Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
	Kadoma-shi, Osaka 571-8501 (JP)

(72)	Inventors:
	Nasu, Toru Kyoto-shi Kyoto 604-8474 (JP) Nagano, Yoshihisa Osaka 564-0004 (JP)

(74)	Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
	Maximilianstrasse 58 80538 München 80538 München (DE)

(54)	Capacitor electrode for a ferroelectric memory cell and method for fabricating the same

(57) A semiconductor memory device comprises an interlayer insulating film (14) formed on a semiconductor substrate; a contact plug (15) formed to extend through the interlayer insulating film; and a capacitor formed on the interlayer insulating film, an electrode (16) of the capacitor being connected with the contact plug, wherein the electrode has an iridium oxide film (16b) as an oxygen barrier film, and the iridium oxide film has a plurality of layers different in average crystal grain size from each other.

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