(19)
(11) EP 1 643 549 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
06.03.2019 Bulletin 2019/10

(45) Mention of the grant of the patent:
05.09.2018 Bulletin 2018/36

(21) Application number: 04023345.4

(22) Date of filing: 30.09.2004
(51) International Patent Classification (IPC): 
H01L 21/8222(2006.01)
H01L 29/08(2006.01)
H01L 27/02(2006.01)
H01L 29/732(2006.01)
H01L 27/12(2006.01)
 H01L 27/082(2006.01)
H01L 21/331(2006.01)
H01L 29/73(2006.01)
H01L 21/84(2006.01)
H01L 21/8249(2006.01)

(54)

Method for producing vertical bipolar transistors and integrated circuit with vertical bipolar transistors

Verfahren zur Herstellung von vertikalen Bipolartransistoren und Halbleiterbaustein mit vertikalen Bipolartransistoren

Procédé de fabrication de transistors bipolaires verticaux et circuit intégré avec transistors bipolaires verticaux

(84) Designated Contracting States:
DE FR GB

(43) Date of publication of application:
05.04.2006 Bulletin 2006/14

(73) Proprietor: Infineon Technologies AG
85579 Neubiberg (DE)

(72) Inventors:
  • Norström, Hans
    17075 Solna (SE)
  • Andersson, Karin
    16560 Hässelby (SE)
  • Algotsson, Patrik
    11739 Stockholm (SE)

(74) Representative: Zimmermann, Tankred Klaus et al
Schoppe, Zimmermann, Stöckeler Zinkler, Schenk & Partner mbB Patentanwälte Radlkoferstrasse 2
81373 München
81373 München (DE)


(56) References cited: : 
US-A- 5 698 459
US-A1- 2002 158 309
 US-A- 6 004 855
US-A1- 2004 048 428
   
  • GILBERT P V ET AL: "QUASI-DIELECTRICALLY ISOLATED BIPOLAR JUNCTION TRANSISTOR WITH SUBCOLLECTOR FABRICATED USING SILICON SELECTIVE EPITAXY" IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, vol. 38, no. 7, 1 July 1991 (1991-07-01), pages 1660-1665, XP000206665 ISSN: 0018-9383
  • HEINEMANN B ET AL: "Novel collector design for high-speed SiGe:C HBTs" INTERNATIONAL ELECTRON DEVICES MEETING 2002. IEDM. TECHNICAL DIGEST. SAN FRANCISCO, CA, DEC. 8 - 11, 2002, NEW YORK, NY : IEEE, US, 8 December 2002 (2002-12-08), pages 775-778, XP010626155 ISBN: 0-7803-7462-2
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).