(19)
(11) EP 1 676 936 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
04.04.2007 Bulletin 2007/14

(43) Date of publication A2:
05.07.2006 Bulletin 2006/27

(21) Application number: 05257954.7

(22) Date of filing: 22.12.2005
(51) International Patent Classification (IPC): 
C23C 16/40(2006.01)
G21C 17/022(2006.01)
C23C 30/00(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK YU

(30) Priority: 30.12.2004 US 24952

(71) Applicant: GENERAL ELECTRIC COMPANY
Schenectady, NY 12345 (US)

(72) Inventors:
  • Dulka, Catherine Procik
    West Chester, Pennsylvania 19380 (US)
  • Kim, Young Jin
    Clifton Park, New York 12065 (US)
  • Israel, Rajasingh Swartz
    Westlake, Ohio 44145 (US)
  • Sandusky, David Wesley
    Los Gatos, California 95030 (US)
  • Janora, Kevin H.
    Schenectady, New York 12306 (US)
  • Brown, Peter W.
    Twinsburg, Ohio 44087 (US)
  • Zhao, Tianji
    Mayfield Heights, Ohio 44124 (US)

(74) Representative: Goode, Ian Roy et al
London Patent Operation General Electric International, Inc. 15 John Adam Street
London WC2N 6LU
London WC2N 6LU (GB)

   


(54) Improved dielectric coating for surfaces exposed to high temperature water


(57) Disclosed is a method for reducing electrostatic deposition of charged particles on wetted surfaces that are exposed, periodically or substantially continuously to high velocity fluid flow within a coolant flow path in a nuclear reactor. The method includes depositing a first or base dielectric layer (102) and a second or outer dielectric layer (104) on a conductive surface (100) that forms a portion of a high velocity flow path. The first dielectric layer material is selected to provide improved adhesion to the conductive surface and the second dielectric layer material is selected to provide suitable adhesion to the first dielectric layer and improved corrosion and/or mechanical resistance in the anticipated operating environment.







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