FIELD OF THE INVENTION
[0001] The present invention relates to fluid ejection devices, and more particularly to
a plurality of barrier layers in a fluid ejection device.
BACKGROUND OF THE INVENTION
[0002] Various inkjet printing arrangements are known in the art and include both thermally
actuated printheads and mechanically actuated printheads. Thermal actuated printheads
tend to use resistive elements or the like to achieve ink expulsion, while mechanically
actuated printheads tend to use piezoelectric transducers or the like.
[0003] A representative thermal inkjet printhead has a plurality of thin film resistors
provided on a semiconductor substrate. A barrier layer is deposited over thin film
layers on the substrate. The barrier layer defines firing chambers about each of the
resistors, an orifice corresponding to each resistor, and an entrance or fluid channel
to each firing chamber. Often, ink is provided through a slot in the substrate and
flows through the fluid channel defined by the nozzle layer to the firing chamber.
Actuation of a heater resistor by a "fire signal" causes ink in the corresponding
firing chamber to be heated and expelled through the corresponding orifice.
[0004] Continued adhesion between the nozzle layer and the thin film layers is desired.
With printhead substrate dies, especially those that are larger-sized or that have
high aspect ratios, unwanted warpage, and thus nozzle layer delamination, may occur
due to mechanical or thermal stresses. For example, often, the nozzle layer has a
different coefficient of thermal expansion than that of the semiconductor substrate.
The thermal stresses may lead to delamination of the nozzle layer, or other thin film
layers, ultimately leading to ink leakage and/or electrical shorts. In an additional
example, when the dies on the assembled wafer are separated, delamination may occur.
In additional and/or alternative examples, the nozzle layer can undergo stresses due
to nozzle layer shrinkage after curing of the layer, structural adhesive shrinkage
during assembly of the nozzle layer, handling of the device, and thermal cycling of
the fluid ejection device.
SUMMARY
[0005] A fluid ejection device comprises a substrate having a first surface; a fluid ejector
formed over the first surface; and a cover layer defining a firing chamber formed
about the fluid ejector, and defining a nozzle over the firing chamber. The cover
layer is formed by at least two SU8 layers.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006]
Fig. 1 illustrates a perspective view of an embodiment of a fluid ejection cartridge
of the present invention.
Fig. 2 illustrates a cross-sectional view of an embodiment of a fluid ejection device
taken through section 2-2 of Fig. 1.
Fig. 3 is a perspective view of an embodiment of a barrier island and a corresponding
firing chamber.
Figs. 4A-4D are cross-sectional views of an embodiment of a process for the present
invention.
Fig. 5 is the flow chart for the views in Figs. 4A-4D.
Fig. 6 is a cross-sectional view of an embodiment of the present invention, with a
layer in addition to that shown in Fig. 4D.
Figs. 7A-7H are cross-sectional views of an embodiment of a process for the present
invention.
Fig. 8 is the flow chart for the views in Figs. 7A-7H.
Fig. 9 is a cross-sectional view of an embodiment of the present invention, with a
layer in addition to that shown in Fig. 7H.
Figs. 10A-10F are cross-sectional views of an embodiment of a process for the present
invention.
Fig. 11 is the flow chart for the views in Figs. 10A-10F.
Fig. 12 is a cross-sectional view of an embodiment of the present invention, with
a layer in addition to that shown in Fig. 10F.
DETAILED DESCRIPTION
[0007] Fig. 1 is a perspective view of an embodiment of a cartridge 101 having a fluid ejection
device 103, such as a printhead. The cartridge houses a fluid supply, such as ink.
Visible at the outer surface of the printhead are a plurality of orifices or nozzles
105 through which fluid is selectively expelled. In one embodiment, the fluid is expelled
upon commands of a printer (not shown) communicated to the printhead through electrical
connections 107.
[0008] The embodiment of Fig. 2 illustrates a cross-sectional view of the printhead 103
of Fig. 1 where a slot 110 is formed through a substrate 115. Some of the embodiments
used in forming the slot through a slot region (or slot area) in the substrate include
wet etching, dry etching, DRIE, and UV laser machining.
[0009] In one embodiment, the substrate 115 is silicon. In various embodiments, the substrate
is one of the following: single crystalline silicon, polycrystalline silicon, gallium
arsenide, glass, silica, ceramics, or a semiconducting material. The various materials
listed as possible substrate materials are not necessarily interchangeable and are
selected depending upon the application for which they are to be used.
[0010] In the embodiment of Fig. 2, a thin film stack 116 (such as an active layer, an electrically
conductive layer, and a layer with micro-electronics) is formed or deposited on a
front or first side (or surface) of the substrate 115. In one embodiment, the thin
film stack 116 includes a capping layer 117 formed over a first surface of the substrate.
Capping layer 117 may be formed of a variety of different materials such as field
oxide, silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass
(PSG). In this embodiment, a layer 119 is deposited or grown over the capping layer
117. In a particular embodiment, the layer 119 is one of titanium nitride, titanium
tungsten, titanium, a titanium alloy, a metal nitride, tantalum aluminum, and aluminum
silicon.
[0011] In this embodiment, a conductive layer 121 is formed by depositing conductive material
over the layer 119. The conductive material is formed of at least one of a variety
of different materials including aluminum, aluminum with about ½ % copper, copper,
gold, and aluminum with ½% silicon, and may be deposited by any method, such as sputtering
and evaporation. The conductive layer 121 is patterned and etched to form conductive
traces. After forming the conductor traces, a resistive material 125 is deposited
over the etched conductive material 121. The resistive material is etched to form
an ejection element 201, such as a fluid ejector, a resistor, a heating element, and
a bubble generator. A variety of suitable resistive materials are known to those of
skill in the art including tantalum aluminum, nickel chromium, tungsten silicon nitride,
and titanium nitride, which may optionally be doped with suitable impurities such
as oxygen, nitrogen, and carbon, to adjust the resistivity of the material.
[0012] As shown in the embodiment of Fig. 2, the thin film stack 116 further includes an
insulating passivation layer 127 formed over the resistive material. Passivation layer
127 may be formed of any suitable material such as silicon dioxide, aluminum oxide,
silicon carbide, silicon nitride, and glass. In this embodiment, a cavitation layer
129 is added over the passivation layer 127. In a particular embodiment, the cavitation
layer is tantalum.
[0013] In one embodiment, a cover layer, such as a barrier layer, 124 is deposited over
the thin film stack 116, in particular, the cavitation layer 129. In one embodiment,
the cover layer 124 is a layer comprised of a fast cross-linking polymer such as photoimagable
epoxy (such as SU8 developed by IBM), photoimagable polymer or photosensitive silicone
dielectrics, such as SINR-3010 manufactured by ShinEtsu
™, or an epoxy siloxane, such as PCX30 manufactured by Polyset Co. Inc. in Mechanicsville,
NY. In another embodiment, the cover layer 124 is made of a blend of organic polymers
which is substantially inert to the corrosive action of ink. Polymers suitable for
this purpose include products sold under the trademarks VACREL and RISTON by E. I.
DuPont de Nemours and Co. of Wilmington, Del.
[0014] An example of the physical arrangement of the cover layer, and thin film substructure
is illustrated at page 44 of the Hewlett-Packard Journal of February 1994. Further
examples of printheads are set forth in commonly assigned
U.S. Pat. No. 4,719,477,
U.S. Pat. No. 5,317,346, and
U.S. Pat. No. 6,162,589. Embodiments of the present invention include having any number and type of layers
formed or deposited over the substrate, depending upon the application.
[0015] In a particular embodiment, the cover layer 124 defines a firing chamber 202 where
fluid is heated by the corresponding ejection element 201 and defines the nozzle orifice
105 through which the heated fluid is ejected. Fluid flows through the slot 110 and
into the firing chamber 202 via channels 203 formed with the cover layer 124. Propagation
of a current or a "fire signal" through the resistor causes fluid in the corresponding
firing chamber to be heated and expelled through the corresponding nozzle 105.
[0016] As shown in the cross-sectional and perspective views of the embodiment illustrated
in Figs. 2 and 3, respectively, the cover layer 124 includes two layers 205, 207.
The first layer 205, such as a primer layer and a bottom layer, is formed over layer
129, and the second layer 207 (such as a top coat layer, a chamber layer, and a nozzle
layer) is formed over layer 205. In this embodiment, the first layer 205 at least
partially defines the firing chamber 202, and the second layer 207 defines a ceiling
of the fluid channel 203, the remainder of the firing chamber and walls, as well as
the nozzle 105. In another embodiment, not shown, the first layer 205 defines the
firing chamber walls, and the second layer 207 defines the nozzle.
[0017] In one embodiment, layers 205 and 207 are formed of different materials. In this
embodiment, layers 205 and 207 are formed of the same material. In alternative embodiments,
the layers 205 and 207 are about the same thickness, or layer 207 is thicker than
layer 205, or layer 205 is thicker than layer 207. In this embodiment, layer 205 is
thinner than layer 207. In one embodiment, layer 205 has a thickness of about 2 to
15 microns, preferably 2 to 6 microns, preferably 2 microns. In one embodiment, layer
207 has a thickness of about 20 to 60 microns, preferably 30 microns. In one embodiment,
the thickness of the primer layer is less than about 50% of the entire thickness of
the layer 124.
[0018] In one embodiment, the primer layer 205 is a low viscosity SU8 material that is cured
at 210°C. In another embodiment, the material for the primer layer 205 is chosen for
resistance to ink and for adhesion to the thin film stack 116 and the nozzle or chamber
layer. In another embodiment, the primer layer 205 is more flexible than the other
layers of the cover layer 124. In yet another embodiment, the primer layer 205 has
more ink resistance than the other layers of the cover layer 124. In another embodiment,
the primer layer 205 is formed of NANO
™ SU8 Flex CP which is a lower modulus SU8 formation. In another embodiment, the primer
layer 205 is a flexibilized epoxy. In another embodiment, the primer layer 205 is
a polyimide - polyamide layer. In another embodiment, the primer layer 205 is SU8
with alternative Photo-Acid-Generator (PAG) loading that makes the material photosensitive.
In another embodiment, the primer layer 205 is cured to a higher temperature than
that of other layers in the cover layer 124. With this higher temperature may come
more resistance to ink, and more stress. However, the thickness of the layer 205 remains
relatively thin to reduce undesirable cracking.
[0019] In one embodiment, the layer 207 has high resolution photolithographic characteristics.
In one embodiment, the layer 207 is cured at 170°C.
[0020] In the embodiment shown in Figs. 4A-4D, the process of forming the two layer (205,
207) barrier layer 124 is illustrated. The embodiment of Fig. 5 shows the flow chart
corresponding to the process illustrated in Figs. 4A to 4D. The primer layer 205 is
coated in step 500, and exposed in step 510. A nozzle layer material 207a coats the
primer layer 205 in step 520 and as shown in Fig. 4A. In step 530 the nozzle layer
207 is exposed in two masks as shown in Figs. 4B and 4C. In step 540, and as shown
in Fig. 4D, the remaining unexposed nozzle layer material 207a is developed and thereby
removed. The nozzle layer forms the firing chamber 202 and nozzle 105.
[0021] In the embodiment shown in Fig. 6, an additional top coat 209 is formed over the
nozzle layer 207. In one embodiment the top coat 209 is photodefinable. In one embodiment,
the top coat 209 is formed of SU8. In one embodiment, the top coat is non-wetting.
In another embodiment, the top coat 209 is a planarizing layer to planarize the often
rough topography of the nozzle layer. In yet another embodiment, the top coat 209
is a mask drawn to produce countersunk bores to reduce puddling. In another embodiment,
the top coat 209 has low surface energy. In another embodiment, the top coat 209 is
a siloxane based material. In another embodiment, the top coat 209 is a fluoropolymer
based material. In one embodiment, the thickness of layer 209 is in the range of about
½ to 5 microns, preferably 1.1 microns.
[0022] In the embodiment shown in Figs. 7A-7H, the process of forming the three layer (205,
206, 208) barrier layer 124 is illustrated. The embodiment of Fig. 8 shows the flow
chart corresponding to the process illustrated in Figs. 7A to 7H. In step 800 the
thin films 116 forming the fluid ejectors are deposited over the substrate. In step
810, the primer layer 205 is spun onto the thin film layers 116 and patterned. In
step 820, and as illustrated in Fig. 7A, a material 206a that forms the chamber layer
is spun on. As illustrated in Fig. 7B, the material 206a is patterned or exposed to
form the chamber layer 206. As illustrated in Fig. 7C and in step 820, the material
206a is developed and thereby removed. In step 830, and illustrated in Fig. 7D, fill
material 300, such as resist, coats the chamber layer 206. In step 840, and as illustrated
in Fig. 7E, the fill material 300 is planarized, by methods such as CMP, patterning
and developing of material. In step 850, and as illustrated in Fig. 7F, the chamber
layer 206 and planarized material 300 is coated with a material 208a that forms the
nozzle layer. As illustrated in Fig. 7G, the nozzle layer 208 is exposed. In step
850, the material 208a is developed. In step 860, and as illustrated in Fig. 7H, the
fill material (such as resist) is removed. The method illustrated in Figs. 7A to 7H,
and in flow chart Fig. 8 may be referred to as the lost wax method.
[0023] The primer layer of Fig. 7H, in this embodiment, has a thickness in the range of
about 2 to 15 microns, more particularly 2 to 6 microns, even more particularly 2
microns. In this embodiment, the chamber layer 206 and the nozzle layer 208 each have
a thickness in the range of about 10 to 30 microns. In a more particular embodiment,
at least one of the layers 206 and 208 have a thickness in the range of about 15 to
20 microns. In another embodiment, at least one of the layers 206 and 208 have a thickness
of 15 or 20 microns.
[0024] In one embodiment, the nozzle layer 208 is formed of a material similar to that of
layer 207 described above. In one embodiment, the chamber layer 206 is formed of a
material similar to that of layer 207 described above. In another embodiment, the
chamber layer 206 is formed of an SU8 with a photobleachable dye for z-contrast. In
one embodiment, z-contrast refers to the direction perpendicular to the substantially
planar substrate. In a more particular embodiment, z-contrast refers to placing an
absorbing material in the formulation to extinguish the light intensity from top to
bottom. In this embodiment, the 'contrast' refers to the sharpness of the transition
between a photo acid concentration that causes the SU8 material to resist the developer
and a concentration that is dissolved by the developer. In one embodiment, the sharper
this transition; the more square the feature. In this embodiment, this photobleachable
dye bleaches and becomes transparent at a sufficient dosage of electromagnetic energy.
[0025] In the embodiment shown in Fig. 9, an additional top coat 209 is formed over the
nozzle layer 208. The top coat 209 is similar to the top coat 209 described with respect
to Fig. 6.
[0026] In the embodiment shown in Figs. 10A-10F, the process of forming the four layer (205,
1206, 1000, 1208) barrier layer 124 is illustrated. The embodiment of Fig. 11 shows
the flow chart corresponding to the process illustrated in Figs. 10A to 10F. In step
1100 and in Fig., 10A, the material 1206a for forming the chamber layer is coated
over the primer layer 205. In step 1110 and in Fig. 10B, the chamber layer 1206 is
exposed thereby forming walls about a chamber, and leaving the unexposed material
1206a within the chamber area. In step 1120 and in Fig. 10C, material 1000a for forming
a photon barrier layer is coated over the chamber layer 1206 and the material 1206a.
In step 1130 and in Fig. 10D, material 1208a for the nozzle layer is coated over the
photon barrier layer material 1000a. In step 1140 and in Fig. 10E, the nozzle layer
1208 and the photon barrier layer 1000 is exposed. The material 1206a remains in the
chamber 202 and the materials 1000a and 1208a remain in the nozzle 105. In step 1150
and in Fig. 10F, the materials 1206a, 1000a, and 1208a are developed and thereby removed
from the chamber and nozzle.
[0027] In this embodiment, the photon barrier layer 1000 is cast from a solution comprising
at least one of an epoxy or acrylic resin, a binder, a solvent, a PAG (photosensitive),
and an i-line dye (photon barrier).. In one embodiment, the thickness of photon barrier
layer 1000 is in the range of about 1/2 microns to 2 microns, preferably 1/2 micron.
In another embodiment, the photon barrier layer is minimized, while being sufficiently
absorbent.
[0028] In one embodiment, the chamber layer 1206 and the nozzle layer 1208 are formed of
a material similar to that of layer 207 described above. In one embodiment, the layer
1206 has a material similar to that of the layer 206. In another embodiment, the photon
barrier layer 1000 is formed of SU8 with photobleachable dye, similar to that described
with respect to an embodiment of layer 206 above. In one embodiment, the SU8 with
photobleachable dye allows greater dimensional control and straighter edges. For example,
as shown in Fig. 10F, the corner edges between the chamber and nozzle are substantially
square edges.
[0029] In the embodiment shown in Fig. 12, an additional top coat 209 is formed over the
nozzle layer 1208. The top coat 209 is similar to the top coat 209 described with
respect to Fig. 6.
[0030] In one embodiment, at least one of the layers in the cover layer 124 in one of the
previous embodiments is formed with the same initial basic coating material. However,
that material is processed differently to give that layer different properties with
respect to other layers in the cover layer 124. For example, in one embodiment, the
one layer is exposed to a different dose of electromagnetic energy or cured at a different
temperature than the remaining layers of the cover layer 124.
[0031] In one embodiment, the materials for the layers of the cover layer 124 are chosen
for, at least one of the following characteristics: CTE matching, ink resistance,
stress relief, non-wetting ability, wetting ability, ability to photocure, high resolution
processing capability, smooth surface, compatibility, and intermixing capability.
[0032] In one embodiment, at least one of the layers in the cover layer 124 in one of the
previous embodiments is formed with a material that is patterned, or etched using
at least one of the following methods: abrasive sand blasting, dry etch, wet etch,
UV assisted wet etch, exposure and developing, DRIE, and UV laser machining. In one
embodiment, at least one of the layers in the cover layer 124 in one of the previous
embodiments is formed with a dry film.
[0033] In one embodiment, the materials forming the primer, chamber and/or nozzle layers
are photodefined through i-line exposure. The i-line exposure is a type of exposure,
in particular, about 365 nm wavelength exposure. In one embodiment, this photodefined
pattern is covered with a resist material. In one embodiment, the resist is a positive
photoresist, in a particular embodiment it is SPR-220. The resist is typically baked
in a convection oven at a temperature between 110°C and 190°C to stabilize the resist
for the subsequent planarization and bore or nozzle layer processing. In some embodiments,
the solvent develop process that removes the unexposed chamber and nozzle layers is
also used to remove the resist.
[0034] In one embodiment, at least one of the above-described embodiments maximizes trajectory
control by reducing orifice-chamber alignment variability.
[0035] In one embodiment, ratios of SU8 ingredients, additives, and molecular weights of
the SU8 oligomers are adjusted to give a range in the materials properties that are
mentioned above.
[0036] It is therefore to be understood that this invention may be practiced otherwise than
as specifically described. For example, the present invention is not limited to thermally
actuated fluid ejection devices, but may also include, for example, piezoelectric
activated fluid ejection devices, and other mechanically actuated printheads, as well
as other fluid ejection devices. In an additional embodiment, the cover layer 124
of the present invention includes a plurality of layers, such as 4 layers, 5 layers,
6 layers, etc. Each of these layers may have either the same or a different material
composition, depending upon the application. Thus, the present embodiments of the
invention should be considered in all respects as illustrative and not restrictive,
the scope of the invention to be indicated by the appended claims.
[0037] Where the claims recite "a" or "a first" element of the equivalent thereof, such
claims should be understood to include incorporation of one or more such elements,
neither requiring nor excluding two or more such elements.
1. A fluid ejection device (103) comprising:
a substrate (115) having a first surface;
a fluid ejector (201) formed over the first surface; and
a cover layer (124) defining a firing chamber (202) formed about the fluid ejector
(201), and defining a nozzle (105) over the firing chamber (202),
wherein the cover layer (124) is formed by at least two SU8 layers.
2. The fluid ejection device (103) of claim 1, wherein each of the SU8 layers are formed
from the same material.
3. The fluid ejection device (103) of claim 2, wherein each of the SU8 layers are processed
differently.
4. The fluid ejection device (103) of claim 1, wherein the cover layer (124) has a primer
layer (205), and a nozzle layer (207), wherein the primer layer (205) has a thickness
that is less than 50% of the thickness of the cover layer (124).
5. The fluid ejection device (103) of claim 1, wherein the primer layer (205) is a low
viscosity SU8 cured at 210°C.
6. The fluid ejection device (103) of claim 1, wherein the cover layer (124) has at least
three layers including a primer layer (205) coating thin film layers, a chamber layer
defining the firing chamber (202), and a nozzle layer defining the nozzle (105).
7. The fluid ejection device (103) of claim 1, further comprising a top coat layer (207)
formed over the cover layer.
8. The fluid ejection device (103) of claim 1, wherein at least one of the layers of
the cover layer (124) is formed by a lost wax method.
9. The fluid ejection device (103) of claim 1, wherein the materials for the layers of
the cover layer (124) are chosen for at least one of the following characteristics:
CTE matching, ink resistance, stress relief, non-wetting ability, wetting ability,
ability to photocure, high resolution processing capability, smooth surface, compatibility,
and intermixing capability.
10. The fluid ejection device (103) of claim 1, wherein at least one of the layers of
the cover layer (124) is formed of a dry film.
11. The fluid ejection device (103) of claim 1, wherein the cover layer (124) has at least
four layers including a primer layer coating thin film layers, a chamber layer defining
the firing chamber, a photon barrier layer with a nozzle layer defining the nozzle.
12. A method of forming a fluid ejection device (103) comprising:
coating a thin film stack, including a fluid ejector (201), with a first material;
exposing the first material to form a first SU8 cover layer;
coating the first material with a second material;
exposing the second material to form a second SU8 cover layer defining a chamber;
developing to remove the unexposed second material from the chamber;
filling the chamber with resist;
planarizing the resist;
coating the resist with a third material;
exposing the third material to form a third SU8 cover layer defining a nozzle; and
developing to remove resist and third material.
1. Eine Fluidausstoßvorrichtung (103), die folgende Merkmale aufweist:
ein Substrat (115), das eine erste Oberfläche aufweist;
einen Fluidausstoßer (201), der über der ersten Oberfläche gebildet ist; und
eine Abdeckschicht (124), die eine Abfeuerungskammer (202) definiert, die um den Fluidausstoßer
(201) gebildet ist, und eine Düse (105) über der Abfeuerungskammer (202) definiert,
wobei die Abdeckschicht (124) durch zumindest zwei SU8-Schichten gebildet ist.
2. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der jede der SU8-Schichten
aus dem gleichen Material gebildet ist.
3. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 2, bei der jede der SU8-Schichten
unterschiedlich verarbeitet ist.
4. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der die Abdeckschicht (124)
eine Grundierschicht (205) und eine Düsenschicht (207) aufweist, wobei die Grundierschicht
(205) eine Dicke aufweist, die weniger als 50 % der Dicke der Abdeckschicht (124)
beträgt.
5. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der die Grundierschicht (205)
ein niedrigviskoses SU8 ist, das bei 210°C gehärtet ist.
6. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der die Abdeckschicht (124)
zumindest drei Schichten aufweist, einschließlich einer Grundierschicht (205), die
Dünnfilmschichten beschichtet, einer Kammerschicht, die die Abfeuerungskammer (202)
definiert, und einer Düsenschicht, die die Düse (105) definiert.
7. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, die ferner eine Deckschicht (207)
aufweist, die über der Abdeckschicht gebildet ist.
8. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der zumindest eine der Schichten
der Abdeckschicht (124) durch ein Wachsausschmelzverfahren gebildet ist.
9. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der die Materialien für die
Schichten der Abdeckschicht (124) aufgrund zumindest eines der folgenden Charakteristika
gewählt sind: CTE-Übereinstimmung, Tintenwiderstand, Spannungsentlastung, Nicht-Benetzungsfähigkeit,
Benetzungsfähigkeit, Fähigkeit zur photochemischen Härtung, Fähigkeit zur Verarbeitung
mit einer hohen Auflösung, glatte Oberfläche, Kompatibilität und Mischfähigkeit.
10. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der zumindest eine der Schichten
der Abdeckschicht (124) aus einem Trockenfilm gebildet ist.
11. Die Fluidausstoßvorrichtung (103) gemäß Anspruch 1, bei der die Abdeckschicht (124)
zumindest vier Schichten aufweist, einschließlich einer Grundierschicht, die Dünnfilmschichten
beschichtet, einer Kammerschicht, die die Abfeuerungskammer definiert, und einer Photonenbarriereschicht
mit einer Düsenschicht, die die Düse definiert.
12. Ein Verfahren zum Bilden einer Fluidausstoßvorrichtung (103), das folgende Schritte
aufweist:
Beschichten eines Dünnfilmstapels, einschließlich eines Fluidausstoßers (201), mit
einem ersten Material;
Belichten des ersten Materials, um eine erste SU8-Abdeckschicht zu bilden;
Beschichten des ersten Materials mit einem zweiten Material;
Belichten des zweiten Materials, um eine zweite SU8-Abdeckschicht zu bilden, die eine
Kammer definiert;
Entwickeln, um das nicht freigelegte zweite Material von der Kammer zu entfernen;
Füllen der Kammer mit einem Resist;
Planarisieren des Resists;
Beschichten des Resists mit einem dritten Material;
Belichten des dritten Materials, um eine dritte SU8-Abdeckschicht zu bilden, die eine
Düse definiert; und
Entwickeln, um das Resist und das dritte Material zu entfernen.
1. Dispositif d'éjection de fluide (103) comprenant :
■ un substrat (15) ayant une première surface ;
■ un éjecteur de fluide (201) formé sur la première surface ; et
■ une couche de couverture (124) définissant une chambre d'amorçage (202) formée autour
de l'éjecteur de fluide (201), et définissant un éjecteur (105) au-dessus de la chambre
d'amorçage (202),
dans lequel la couche de couverture (124) est formée par au moins deux couches en
SU.8.
2. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel chacune
des couches en SU8 est formée à partir du même matériau.
3. Dispositif d'éjection de fluide (103) selon la revendication 2, dans lequel chacune
des couches en SU8 est traité différemment.
4. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche
de couverture (124) comporte une couche primaire (205) et une couche d'éjecteur (207),
dans lequel la couche primaire (205) a une épaisseur qui est inférieure à 50% de l'épaisseur
de la couche de couverture (124).
5. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche
primaire (205) est un SU8 à faible viscosité durci à 210°C.
6. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche
de couverture (124) a au moins trois couches comprenant une couche primaire (205)
recouvrant de fines couches de pellicule, une couche de chambre définissant la chambre
d'amorçage (202) et une couche d'éjecteur définissant l'éjecteur (105).
7. Dispositif d'éjection de fluide (103) selon la revendication 1, comprenant en outre
une couche de revêtement supérieure (207) formée par-dessus la couche de couverture.
8. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel au moins
une des couches de la couche de couverture (124) est formée par un moulage à la cire
perdue.
9. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel les matériaux
pour les couches de la couche de couverture (124) sont choisis pour au moins une des
caractéristiques suivantes : équivalence de coefficient de dilatation thermique, résistance
à l'encre, détente, capacité de non mouillage, capacité de mouillage, capacité de
photodurcissement, capacité de traitement à haute résolution, surface lisse, compatibilité
et capacité de mélange.
10. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel au moins
une des couches de la couche de couverture (124) est formée par un film sec.
11. Dispositif d'éjection de fluide (103) selon la revendication 1, dans lequel la couche
de couverture (124) comporte au moins quatre couches comprenant une couche primaire
recouvrant de fines couches de pellicule, une couche de chambre définissant la chambre
d'amorçage, une couche barrière de photons avec une couche d'éjecteur définissant
l'éjecteur.
12. Procédé de formage d'un dispositif d'éjection de fluide (103) comprenant les étapes
consistant à :
■ revêtir une fine pile de pellicules, comprenant un éjecteur de fluide (201) dans
un premier matériau ;
■ exposer le premier matériau pour former une première couche de couverture en SU8
;
■ revêtir le premier matériau d'un second matériau ;
■ exposer le second matériau pour former une seconde couche de couverture en SU8 définissant
une chambre ;
■ développer pour enlever le second matériau non exposé de la chambre ;
■ remplir la chambre de matière de protection ;
■ aplanir la matière de protection ;
■ revêtir la matière de protection d'un troisième matériau ;
■ exposer le troisième matériau pour former une troisième couche de couverture en
SU8 définissant un éjecteur ; et
■ développer pour retirer la matière de protection et le troisième matériau.