(19)
(11) EP 1 680 809 A2

(12)

(88) Date of publication A3:
15.12.2005

(43) Date of publication:
19.07.2006 Bulletin 2006/29

(21) Application number: 04799593.1

(22) Date of filing: 04.11.2004
(51) International Patent Classification (IPC): 
H01L 21/205(1974.07)
H01S 5/323(2000.01)
 H01L 33/00(1974.07)
(86) International application number:
PCT/JP2004/016699
(87) International publication number:
WO 2005/043582 (12.05.2005 Gazette 2005/19)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LU MC NL PL PT RO SE SI SK TR

(30) Priority: 04.11.2003 JP 2003374478
14.11.2003 US 519636 P

(71) Applicant: Showa Denko K.K.
Tokyo 105-8518 (JP)

(72) Inventor:
  • KOBAYAKAWA, Masato, c/o Showa Denko K.K.
    Chiba-shi, Chiba 267-0056 (JP)

(74) Representative: Strehl Schübel-Hopf & Partner 
Maximilianstrasse 54
80538 München
80538 München (DE)

   


(54) METHOD FOR MANUFACTURING P-TYPE GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE