(19)
(11) EP 1 688 991 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A2)

(48) Corrigendum issued on:
11.10.2006 Bulletin 2006/41

(43) Date of publication:
09.08.2006 Bulletin 2006/32

(21) Application number: 06002047.6

(22) Date of filing: 01.02.2006
(51) International Patent Classification (IPC): 
H01L 21/762(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK YU

(30) Priority: 04.02.2005 JP 2005028825

(71) Applicant: SUMCO Corporation
Tokyo 105-8634 (JP)

(72) Inventors:
  • Murakami, Satoshi
    Tokyo 105-8634 (JP)
  • Ono, Toshiaki
    Tokyo 105-8634 (JP)
  • Endo, Akihiko
    Tokyo 105-8634 (JP)

(74) Representative: Albrecht, Thomas et al
Kraus & Weisert, Thomas-Wimmer-Ring 15
80539 München
80539 München (DE)

   


(54) SOI wafer production method


(57) By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a wafer doped with C in a single crystal ingot growing process (desirably to a carbon concentration of not lower than 1 x 1016 atoms/cm3) as the active layer wafer, it becomes possible to exhibit the effect of inhibiting agglomeration of interstitial Si atoms and prevent development of stacking faults even when the SOI wafer is subjected to thermal oxidation treatment. Furthermore, the technique of sacrificial oxidation can be applied to production of SOI wafers and, thus, a damaged layer formed on the SOI layer surface can be removed and surface roughness can be improved without impairing crystalline integrity and, further, SOI layer thickness can be efficiently reduced.