(19)
(11) EP 1 703 002 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 A2)

(48) Corrigendum issued on:
26.09.2007 Bulletin 2007/39

(88) Date of publication A3:
25.07.2007 Bulletin 2007/30

(43) Date of publication:
20.09.2006 Bulletin 2006/38

(21) Application number: 06251277.7

(22) Date of filing: 09.03.2006
(51) International Patent Classification (IPC): 
C30B 29/04(2006.01)
 H01L 29/00(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK YU

(30) Priority: 14.03.2005 JP 2005071924

(71) Applicants:
  • Shin-Etsu Chemical Company, Ltd.
    Tokyo 100-0004 (JP)
  • Sawabe, Atsuhito
    Yokosuka-shi, Kanagawa-ken (JP)

(72) Inventors:
  • Noguchi, Hitoshi c/o Advanced Functional Materials Research Center
    Annaka-shi, Gunma-ken (JP)
  • Sawabe, Atsuhito
    Yokosuka-shi, Kanagawa-ken (JP)

(74) Representative: McBride, Peter Hill 
Murgitroyd & Company Scotland House 165-169 Scotland Street
Glasgow G5 8PL
Glasgow G5 8PL (GB)

   


(54) Multilayer substrate, method for producing a multilayer substrate, and device


(57) There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.